Semiconductor substrate and its manufacturing method, as well as a vapor phase growth apparatus used for it.

Warping caused by differences in physical constants is canceled out between both surfaces! It is possible to manufacture semiconductor substrates with minimal warping!

The issue of warping in GaN substrates leads to high costs due to low yield, as well as low crystal quality and small areas of low quality, which in turn becomes the biggest factor hindering the widespread adoption of GaN substrates. The present invention aims to produce semiconductor substrates with minimal warping using a vapor phase growth method. By alternately growing semiconductor crystals on both sides of the base substrate using the vapor phase growth method, the warping caused by differences in physical constants such as the thermal expansion coefficients of the base substrate and the semiconductor is canceled out between the two sides, making it possible to manufacture semiconductor substrates with minimal warping. 【Key Solutions】 - Manufacturing semiconductor substrates by growing semiconductor crystals on the base substrate using the vapor phase growth method. - A process in which raw gas is brought into contact with one principal surface of the base substrate to grow semiconductor crystals on the base substrate. - Another process in which raw gas is brought into contact with the other principal surface of the base substrate to grow semiconductor crystals on the base substrate. - Alternating between the first process and the other process. *For more details, please refer to the PDF document or feel free to contact us.

Other semiconductors