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  6. Gate drive photocoupler "ACPL-355JC"

Gate drive photocoupler "ACPL-355JC"

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last updated:Jun 30, 2022

ブロードコム(アバゴ・テクノロジー株式会社)
ブロードコム(アバゴ・テクノロジー株式会社)
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Output peak current 10A. For driving IGBT/SiC/GaN modules. SO16 package with protection function, CTI 600V (material class I).

The "ACPL-355JC" is a gate drive photocoupler that supports a peak output current of 10A and a wide operating voltage. With its high common-mode noise rejection capability (100kV/μs), it is suitable for driving modules such as IGBTs and SiC/GaN MOSFETs in motor control and inverter applications. It features excellent timing skew performance, with a propagation delay time of 140ns. It is equipped with functional safety to protect the module from overcurrent and report the status to the controller. 【Features】 ■ Compact implementation in an SO16 package with protection function CTI600V (material class I) ■ Reinforced insulation certified by international safety standards IEC/EN/DIN, UL, and CSA * A release of the automotive product "ACFL-3161T" compliant with AEC-Q100 Grade 1 is also planned. * Evaluation boards for SiC-MOSFETs (for Infineon and Wolfseed) are available. Please feel free to contact us for more details. ★ You can view the explanatory materials (in English) for the "SiC/GaN Gate Drive Photocoupler," which includes reference design diagrams, by clicking the download button below.

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Gate drive photocoupler "ACPL-355JC"

?-1 355JC-Banner.jpg
?-1 355JC-Banner.jpg

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【Other Features】 - Two output drive terminals with adjustable turn-on/turn-off times - Short-circuit detection and adjustable "soft" shutdown feature - Feedback function (fault state/UVLO state) - Built-in under-voltage lockout (UVLO) protection with hysteresis - Minimum common-mode noise rejection (CMR) of 100kV/μs at VCM=1500V - Compliant with various safety standards (UL1577, CSA, IEC 60747-5-5) 【Specifications】 Operating temperature range: -40 to +110°C Maximum output drive current: 10A peak Power supply voltage range (VDD2): 15 to 30V Creepage and clearance distance: 8.3mm *Our products are also suitable for combinations with Infineon's "CoolSiC," STMicroelectronics' "STSiC," Nexperia's "GaN FET," and Wolfspeed (Cree) "SiC." For more details, please refer to the explanatory materials available for PDF download.

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"10A Peak SiC/GaN Gate Drive Photocoupler" Reference Design Documentation (English Material)

"10A Peak SiC/GaN Gate Drive Photocoupler" Reference Design Documentation (English Material)

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Reference design documentation with schematic for ACPL-355JC.

Reference design documentation with schematic for ACPL-355JC.

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Data sheet for ACPL-355JC (Preliminary version Rev 1.9)

Data sheet for ACPL-355JC (Preliminary version Rev 1.9)

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Evaluation board materials for SiC-MOSFET (Japanese version for Infineon)

Evaluation board materials for SiC-MOSFET (Japanese version for Infineon)

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Evaluation board materials for SiC-MOSFET (English version for Wolfseed Corporation)

Evaluation board materials for SiC-MOSFET (English version for Wolfseed Corporation)

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Company information

ブロードコム(アバゴ・テクノロジー株式会社)

ブロードコム(アバゴ・テクノロジー株式会社)

Electronic Components and Semiconductors

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Broadcom, rooted in AT&T/Bell Labs, Lucent, and Hewlett-Packard/Agilent, focuses on technologies that connect our world, leveraging its rich accumulation of technology. Through the integration of Avago Technologies, LSI, Broadcom Corporation, Brocade, and CA Technologies, it possesses the scale, coverage, and exceptional technical capabilities to lead the industry into the future. Broadcom provides category-leading, cutting-edge semiconductors and infrastructure software solutions, backed by its global scale, outstanding technology, diverse product portfolio, and excellent execution capabilities.

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