Next-generation power module universal package for high-performance devices such as SiC, GaN, and Ga2O3.
In conventional power module general-purpose packages, they were unsuitable for use with high-performance devices such as SiC, GaN, and Ga2O3. The next-generation power module general-purpose package FLAP developed by our company solves these issues and significantly improves indicators such as volume, thermal resistance, and package inductance compared to conventional products.
Inquire About This Product
basic information
External dimensions [mm] 91% reduction Conventional structure module 147×60×18 FLAP 71×40×5 Thermal resistance [℃/W] Rth_j-c 91% reduction Conventional structure module 0.122 FLAP 0.088 Package inductance [nH] 92% reduction Conventional structure module 58 FLAP 4.7 Achieved through our unique technologies, for which we have obtained patents. - Metal particle sintering technology - Ultrasonic bonding technology for main circuit connection parts - Compact package design technology (high heat-resistant materials, low thermal resistance package structure, etc.)
Price range
Delivery Time
Applications/Examples of results
Modules for high-performance devices such as SiC, GaN, and Ga2O3.
Company information
We will develop power devices with unique specifications that match our customers' needs. We solve issues such as "there are no packages available that meet my requirements" and "there are no companies that can develop with unique specifications." Development can also start from a consultation basis. Our engineers, who have extensive project experience, will assist you in all phases up to mass production. Our company is a partner that helps fulfill our customers' desire to "create!" and accompanies them to the finish line.
