It is possible to assist with processing management, time reduction, cost reduction, and yield improvement!
We would like to introduce our "Ultra-High Flatness Substrate." We have achieved high flatness even for small-diameter substrates of conventional semiconductor single crystal substrates. In standard processing, the limit for flatness (TTV) was ≦3um, but we have realized TTV ≦1um, and we can respond to even higher flatness requirements depending on specifications. The high flatness of the base substrate offers advantages in bonding substrates and photolithography, and it also contributes to the uniformity of various deposition films formed on the substrate, expanding its applications to devices that require precision in the future. Additionally, as a substrate manufacturer, we can adjust substrate thickness and achieve symmetry in edge shapes from the ingot stage, which can help reduce the cumbersome processing management, shorten time, cut costs, and improve yield for our customers. 【Effective Examples】 ■ We want to reduce the time and cost of thinning and flattening support substrates for bonding. ■ Improving yield in the outer peripheral area. *For more details, please refer to the related links or feel free to contact us.
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basic information
【Standard Product Specifications】 ■Diameter: 4.6 inch ■TTV: ≦1um (Actual: ≦0.5um) ■Conductivity Type: P-type (B), N-type (Phos, Sb), FZ ■Crystal Axis: <100>, <110>, <111> ■Resistivity: ≦0.005 ~ 40 Ωcm ■Surface Condition: SSP, DSP *For more details, please refer to the related links or feel free to contact us.
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Applications/Examples of results
【Applications】 ■ Substrates for bonding (SOI, LT, TC-SAW, etc.) ■ Substrates for photolithography processing ■ Other process applications affected by TTV *For more details, please refer to the related links or feel free to contact us.
Company information
Our company is a specialized manufacturer of small-diameter silicon wafers. We conduct integrated production from the growth of single crystal ingots to the mirror finishing of wafers. We are also advancing joint development with the R&D Center of our group company, Kurita Holdings, and are striving for further technological innovation, including the development of new products for the optical field, as well as silicon wafers for semiconductors. Please feel free to contact us if you have any requests.
