シリコンテクノロジー Product Lineup

We would like to introduce our "Ultra-High Flatness Substrate." We have achieved high flatness even for small-diameter substrates of conventional semiconductor single crystal substrates. In standard processing, the limit for flatness (TTV) was ≦3um, but we have realized TTV ≦1um, and we can respond to even higher flatness requirements depending on specifications. The high flatness of the base substrate offers advantages in bonding substrates and photolithography, and it also contributes to the uniformity of various deposition films formed on the substrate, expanding its applications to devices that require precision in the future. Additionally, as a substrate manufacturer, we can adjust substrate thickness and achieve symmetry in edge shapes from the ingot stage, which can help reduce the cumbersome processing management, shorten time, cut costs, and improve yield for our customers. 【Effective Examples】 ■ We want to reduce the time and cost of thinning and flattening support substrates for bonding. ■ Improving yield in the outer peripheral area. *For more details, please refer to the related links or feel free to contact us.

• Printed Circuit Board
• Circuit board design and manufacturing

Our company manufactures and sells silicon single crystals and wafers as materials for semiconductors. We produce them through a consistent production line, from single crystal growth to mirror-finished wafer processing. Since we also manufacture the single crystals used as raw materials in-house, we can provide products with characteristics that match our customers' requirements. 【Single Crystal Product Specifications】 ■ Single Crystal Growth Method: CZ Method, (FZ Method) ■ Diameter: 4, 5, 6, (8) inch ■ Dopants: B, P, Sb, B・Ge, (As) ■ Crystal Axis: <100>, <111>, <110> ■ Resistivity: Lightly Doped 0.1–40.0Ωcm / Heavily Doped 0.001–0.1Ωcm *For more details, please feel free to contact us.

• Other polymer materials