250nm SiC ultrafine particles for high-density sintered bodies silicon carbide

[Low-temperature sintering, high densification, high purity] SiC ultrafine particles with an average particle diameter of 250nm contribute to the densification of the sintered body!

SiC (silicon carbide) sintered bodies are widely used in semiconductor manufacturing equipment and other applications due to their excellent properties such as chemical resistance, heat resistance, and high thermal conductivity. In recent years, with the advancement of product requirements, there has been a demand for higher density in sintered body components. However, since SiC is a difficult-to-sinter material, producing high-density SiC sintered bodies poses challenges, such as the need for temperature environments around 2000°C, which places a high load on equipment. In response to these challenges, our company has developed α-type silicon carbide, GC#40000. This product consists of ultra-fine particles with an average particle diameter of 250 nm, allowing for higher activation energy during sintering, which enables sintering at lower temperatures than conventional methods. Additionally, under the same temperature conditions, it is possible to achieve a denser and more compact sintered body. Furthermore, GC#40000 achieves a high purity of 99.9% as α-type SiC, contributing to the production of high-purity sintered bodies. If you have any of the following challenges, please feel free to contact us: - I want to improve the density of sintered bodies. - I want to reduce the firing temperature to decrease the power consumption of the firing furnace. - I want to sinter SiC in the current firing furnace, but the maximum temperature of the furnace is insufficient.

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