High-selectivity etching! Optimization of radical supply by adjusting the spacing between the ICP source and the substrate electrode.
The "SI 500" is an ICP-RIE that controls ion density through ICP power. It achieves a high etch rate with a high plasma density of 10^12 [ions/cm3] using the unique PTSA200ICP source. Additionally, it features low-damage etching through control of ion energy via bias power. 【Features】 ■ Control of ion density through ICP power ■ Control of ion energy through bias power ■ Optimization of radical supply by adjusting the distance between the ICP source and the substrate electrode ■ Low-damage etching ■ High selectivity etching *For more details, please refer to the PDF document or feel free to contact us.
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Our company website features information on used equipment related to FPD and semiconductors. ● Main Business Activities Purchase of used semiconductor manufacturing equipment, refurbishment, sales, and setup operations Construction and consulting for semiconductor manufacturing lines Purchase of used FPD manufacturing equipment, refurbishment, sales, and setup operations Construction and consulting for FPD manufacturing lines Contract development, manufacturing, and sales of semiconductor manufacturing equipment and FPD manufacturing equipment Sales of various equipment parts Agency sales of overseas manufactured equipment