Introducing a full-scale production device equipped with a vacuum cassette chamber, offering excellent process reproducibility and stability.
The "RIE-800iPC/RIE-400iPC" is an ICP etching device that boasts stability for continuous processing of 25 SiC trench-shaped wafers. It can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity. Additionally, by adopting an exhaust system directly connected to the reaction chamber, it realizes a wide process window from low flow and low pressure to high flow and high pressure. 【Features】 <RIE-800iPC> ■ Supports maximum Φ8” wafers ■ Uses inductively coupled plasma for discharge ■ Equipped with a vacuum cassette chamber, excelling in process reproducibility and stability ■ Optimizes the distance between the wafer and plasma to ensure good in-plane uniformity ■ Integrates TMP (Turbo Molecular Pump) and high-frequency power supply for easy replacement *For more details, please refer to the PDF document or feel free to contact us.
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【Features】 <RIE-400iPC> ■Compatible with maximum Φ4” wafers ■Can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity ■By adopting an exhaust system directly connected to the reaction chamber, a wide process window from low flow/low pressure to high flow/high pressure is realized ■Supports both interference-type and emission spectrometry-type endpoint monitors, enabling endpoint detection at the target film thickness *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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We excel in the technology of thin film formation and processing at the nano to micro level, and we are well-regarded for providing equipment and technology for both research and development applications as well as production purposes. Additionally, we specialize in the optoelectronics field, particularly in light sources (LEDs and semiconductor lasers), which are expected to see market expansion in the future.
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