XeF2 etching device
● Since it is a completely dry process, it is possible to suppress the destruction of self-supporting devices due to stiction. ● No pre-treatment or post-treatment is required in the wet process. ● By intermittently flowing gas and etching, it is easy to control the etching speed and gas usage. ● Since it does not use plasma, there is no damage to the device from electric fields (electron or ion impact). ● Designed for research and development purposes, it is very compact and tabletop in design. ● As it is a dedicated machine, it is low-cost.
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basic information
The VPE-4F is a XeF2 etching device primarily intended for etching the sacrificial layer (Si) during the formation of standalone devices in the MEMS process. Being a completely dry process, it can suppress the occurrence of stiction (sticking) that can be problematic in wet processes. Additionally, it is designed to be very compact and tabletop-sized, making it suitable for research and development purposes.
Price information
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Delivery Time
P4
Applications/Examples of results
Etching of sacrificial layer (Si) during the formation of autonomous devices in the MEMS process.
Company information
We excel in the technology of thin film formation and processing at the nano to micro level, and we are well-regarded for providing equipment and technology for both research and development applications as well as production purposes. Additionally, we specialize in the optoelectronics field, particularly in light sources (LEDs and semiconductor lasers), which are expected to see market expansion in the future.
