Simple production of porous SiC with high porosity
Porous body with nano to micro order small pores is expected to be used in many applications. Among materials that make up porous body, silicon carbide has attracted attention because of its high heat resistance temperature and excellent property as a semiconductor material. However, for the application of porous silicon carbide, it is necessary to consider not only the excellent property of silicon carbide, but also the structure of the porous material. This invention is about a porous silicon carbide with porous structure having a wide range of pore sizes from nanoscale to millimeter scale and showing fractal nature, as well as its simple production method. The production method has the process of heating an organosilicon compound in metal vapor (such as Mg vapor) to form a composite of silicon carbide and metal oxide, and the process of eluting metal oxide from the composite. Porous silicon carbide produced by this method is suitable for application that requires a large surface area because of its high porosity.
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The revenue generated from technology transfer is reinvested as new research funding for universities and researchers, and is utilized to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will vigorously promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by signing basic technology transfer agreements with the following universities (as of June 1, 2025): Tohoku University, Hirosaki University, Iwate University, Akita University, Fukushima University, Yamagata University, Tohoku Gakuin University, Iwate Medical University, Fukushima Medical University, Aizu University, Miyagi University, Hokkaido University, Muroran Institute of Technology, and Showa Medical University.
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