Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!
In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a method that visualizes the shape of materials in three dimensions non-destructively and allows for quantitative evaluation. In the PDF document, you can see the CT images obtained when observing the etched pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etched pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.
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