With a space-saving design, the vacuum pump module can be installed up to 18 meters away from the process module.
This device is compatible with 4, 5, 6, and 8-inch wafers and is designed to form silicon oxide and silicon nitride films on the wafers using the plasma CVD method. The basic configuration consists of three modules: a process module, an RF generator module (one set each for high frequency and low frequency), and a vacuum pump module.
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