Check the leak path by 3D visualization of SEM images.
For the SiC transistor, where the leak location was identified using a backside emission microscope, cross-sectional SEM observation was conducted using Slice & View. With Slice & View, it is possible to capture images of the leak location without missing it by performing cross-sectional observations at a pitch of several tens of nanometers around the leak area. By converting the SEM images into 3D, the leak path can be confirmed. Measurement method: Slice & View, EMS Product area: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.
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For more details, please download the materials or contact us.
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Analysis of power devices.
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Download All Catalogs![[Analysis Case] Failure Analysis of SiC Power Transistor Leakage Locations Using Slice & View (3D-SEM) _C0710](https://image.mono.ipros.com/public/catalog/image/01/213/756201/IPROS99240386398409599978.jpeg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!