Ferroelectric Ion Beam Etching Solution 'QuaZar'

Inert gas Ar etching and enhanced RIBE using reactive gases are possible!

"QuaZar" is an etching processing technology that enables vertical etching capability, which is difficult to achieve with plasma etching, in the etching process of hard-to-etch materials such as ferroelectric PZT, thanks to its large-area ion source and advanced motion control. By adopting a unique Ion Source, Marathon Grids, and optional Dual PBN, it triples the MTBM compared to conventional products (and can also be installed in existing equipment from other companies). Additionally, the REDEP Breaker and AUXILIARY Electrode prevent RF shunting and anode disappearance. 【Features】 ■ In PZT etching applications, etch stop is possible with noble metal electrode layers without EPD (with no deposition on sidewalls and a smooth surface). ■ The selectivity of photoresist in PZT etching improves from 0.6:1 with inert IBE to 1.1:1 with RIBE. ■ The etching speed for PZT improves from about 20 nm/min with inert IBE to about 30 nm/min with RIBE. *For more details, please feel free to contact us.

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