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We would like to introduce our "RIE Dry Etching Equipment for Photomasks." By adopting a "shuttle" as the carrier for photomasks, it is possible to process various sizes of photomasks simply by replacing the "shuttle," without the need to change the hard wafer. We offer both open load and load lock types, and with the load lock type, it is possible to etch MoSi, Cr, and Ta materials in a single chamber. 【Features】 ■ Compact design ■ Easy cleaning of the reactor interior through plasma cleaning ■ Use of liners to prevent contamination within the reactor chamber ■ Easy to remove due to the plug-in design *For more details, please download the PDF (English version) or feel free to contact us.
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"ECLIPSE" is a sputtering device using a side sputtering method for front and backside metallization, as well as for the deposition of dielectrics and piezoelectric materials. It also features a uniquely developed transport mechanism that accommodates ultra-thin wafers and fragile substrates. This device is recommended for engineers facing challenges with continuous deposition and wafer transport in sputtering processes such as backside metallization and under bump metal. 【Features】 ■ Non-contact wafer transport mechanism ■ Compatible with production 150mm wafers (wafer thickness: 250μm) ■ Also compatible with production 100mm wafers (wafer thickness: 130μm) ■ Wafer self-centering capability *For more details, please feel free to contact us.
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The high-density radical cleaning process can completely remove residues such as photoresist and polymers without damaging delicate devices or complex structures. Furthermore, for fine structures such as medical implants, our unique plasma source using remote plasma allows for the removal of residues that could not be completely eliminated by wet processes. Additionally, processing can be performed at both high and low temperatures for complex shapes using high-density radical flux. 【Features】 ■ Flexible processing over a wide temperature range ■ High selectivity and uniformity in the process ■ Capability to completely clean samples with complex shapes *For more details, please feel free to contact us.
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The "Corial Shuttleline Series for Failure Analysis" is a failure analysis device capable of selectively removing not only the insulating layers of semiconductor ICs but also the metal layers. It features a small footprint and is a cost-effective failure analysis system. To maintain electrical characteristics, it provides highly precise etching processes using RIE and ICP-RIE, ranging from multi-level deprocessing that does not etch the metal layers to damage-free processes with high selectivity, including metal etching. The failure analysis solution can analyze die packages and full wafers up to 200mm. 【Features】 ■ Does not etch metal layers to maintain electrical characteristics ■ High selectivity processes including metal etching from multi-level deprocessing ■ Reduces analysis time from 1 to 5 days with wet etching to just 1 to 2 hours *For more details, please feel free to contact us.
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We would like to introduce our thin film PECVD and dry etching equipment, the "SHUTTLELINE(R)" and the compact 300 & 500 series compatible with batch processes. Film deposition is done using PECVD, while etching is performed using RIE, ICP, and ICP-RIE. By utilizing a unique wafer stage, it is possible to batch process from 1 to a maximum of 27 pieces for 2-inch wafers, for example. These systems can be used from development to mass production. 【Features】 ■ The PECVD deposition equipment features a compact chamber design and incorporates automatic cleaning, maximizing throughput. ■ The etching equipment is said to reduce operational costs, making it popular among many micro LED manufacturers. ■ It accommodates various wafer sizes and shapes, including wafer pieces and full wafers, and thanks to the shuttle system (wafer stage), no hardware changes are needed for different sample sizes. *For more details, please feel free to contact us.
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The "SHUTTLELINE(R) series" is a flexible semiconductor manufacturing device that supports PECVD and dry etching for thin film deposition and failure analysis processes. It is compatible with RIE/ICP-RIE and PECVD/ICP-CVD, and is a compact device that can be used for various applications with a range of options. It is recommended for companies and academia that need a compact lab-scale device for R&D or laboratories, or for those looking for a device that can perform both film deposition and etching in one unit. 【Features】 ■ High-precision, damage-free etching process ■ Supports various wafer sizes and shapes, including dies, packaged dies, wafer pieces, and full wafers ■ The shuttle system eliminates the need for hardware changes for different sample sizes ■ Multi-functional support for film deposition/etching in one unit ■ Proven adoption worldwide, with local support through Plasma-Therm LLC's global network *For more details, please feel free to contact us.
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The "HEATPULSE" is a high-speed heating treatment (RTP/RTA) device capable of SiC wafer annealing without the need for a susceptor. Thanks to our unique technology, high-temperature processes are also made more efficient. This device is suitable for power device-related applications, as well as other semiconductor industries, or for those requiring high-temperature rapid heating treatment. 【Features】 ■ Achieves SiC annealing without a susceptor through unique technology ■ Approximately 1.5 times higher throughput and improved process flexibility due to enhanced purge efficiency and heating rate (compared to our susceptor-equipped devices) ■ The new model supports a two-chamber configuration, allowing for future upgrades from single to double chamber ■ Plasma-Therm's proprietary user-friendly control system "Cortex" *For more details, please refer to the related links or feel free to contact us.
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The "Plasma POD Series" is a small and compact tabletop etching and deposition device. It is recommended for those who have limited installation space and are considering the introduction of an etching and deposition device at a low cost. Please feel free to contact us if you have any inquiries. 【Features】 ■ Maximum device size: 80cm x 80cm x 80cm (height) ■ Easy operation with a touch panel * You can download the English version of the catalog. * For more details, please feel free to contact us.
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"QuaZar" is an etching and deposition device that achieves process results in challenging etching processes and thin film formation applications through a large-area ion source and advanced motion control. The Marathon grids technology of this product is a key element and can be installed in your existing systems. Many customers around the world have successfully improved the performance of their existing equipment with grid technology, extending its lifespan by more than double. 【Features】 ■ Uniformity <2% 3σ (200mm wafer), with scanning motion achieving <0.6% 3σ ■ Ion Source, Marathon Grid, and Dual PBN have doubled the MTBM compared to conventional systems and can be equipped on existing devices from other manufacturers ■ Clustering with our PVD, CVD, etc. is possible ■ 150mm, 200mm *For more details, please feel free to contact us.
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We would like to introduce our plasma-based atomic layer etching device, the 'Takachi ALE.' The Takachi system enables the ALE process by incorporating an ALE kit. Since etching is performed one atomic layer at a time on the surface, it minimizes damage to the etched object. 【Features】 ■ Equipped with an ALE kit, enabling the ALE process ■ Etches one atomic layer at a time on the surface ■ Minimizes damage to the etched object *You can download the English version of the catalog. *For more details, please refer to the PDF materials or feel free to contact us.
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We would like to introduce the "Takachi ICP Cryo," which we handle. It is used in etching processes that require higher anisotropy and selectivity. 【Features】 ■ Temperature range: -150℃ to +350℃ ■ Wafer size: 2" to 8" * You can download the English version of the catalog. * For more details, please refer to the PDF document or feel free to contact us.
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The "200FA/200R/200I" is a defect analysis device for semiconductor chips and wafers. Through the delamination process, it is possible to remove unnecessary areas and analyze the causes of defects. 【Features】 ■ Selectable delamination technologies (RIE, HCD, ICPRIE) ■ Flexibility in sample shapes (die, package die, wafer fragments, full wafers) ■ Flexibility in transport (direct load, pre-load shuttle, pre-load shuttle with load lock) * You can download the English version of the catalog. * For more details, please refer to the PDF materials or feel free to contact us.
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The "210D model" is a film deposition device using Inductively Coupled Plasma (ICP). By replacing hardware on-site, it can be used as an inductively coupled plasma etching device in just a few minutes of work. With a compact body and a variety of options, it supports various applications such as thin film deposition and trench patterning. 【Features】 ■ Can be used as plasma CVD and RIE with simple hardware replacement ■ Approximately 30% smaller footprint compared to industry standards ■ Easy to operate with an intuitive graphic interface ■ Custom specifications can be accommodated upon request *For more details, please feel free to contact us.
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The "MDS-100/MDS-300" is a plasma dicing device that utilizes inductively coupled technology, enabling stable and uniform continuous processing of 25 wafers with high-output plasma. It allows processing while maintaining high uniformity without causing damage to the wafers, similar to that caused by saws or lasers. Using the Bosch process with a high-speed gas switching system, it achieves excellent sidewall shape and processing of free shapes, providing superior dicing strength compared to existing methods. 【Features】 ■ Contributes to improved die quality, yield, and freedom of die shape with excellent processing capability ■ Supports multiple wafer sizes (MDS-100: φ4" to 8", MDS-300: φ8" to 12") ■ Dicing using Bosch process with inductively coupled plasma ■ Achieves fast and stable step switching through a high-speed gas switching system ■ Allows setting of parameter morphing and its fluctuation trends *For more details, please refer to the PDF document or feel free to contact us.
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"KOBUS F.A.S.T.(R)" is a plasma deposition device for industrial ALD-level film quality. By utilizing a pulse function, it is possible to produce films equivalent to ALD (Atomic Layer Deposition) in the same processing time as conventional CVD. The process temperature ranges from 80°C to 500°C, with wafer sizes of 150mm and 200mm, and a deposition rate of 0.1nm/min to 500nm/min. 【Specifications】 ■ Process temperature: 80°C to 500°C ■ Wafer sizes: 150mm, 200mm ■ Deposition rate: 0.1nm/min to 500nm/min ■ Aspect ratio ・20:1 * You can download the English version of the catalog. * For more details, please refer to the PDF materials or feel free to contact us.
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