Tohoku Univ.Technology : Piezoelectric thin film & Piezoelectric device : T17-157
MgHfAlN film, World’s Highest FoM
Lead zirconate titanate (PZT) has been widely used as a piezoelectric material in sensors, actuators, and related applications. However, the presence of toxic Pb (lead) in PZT necessitates the search for safer alternatives. This innovative solution introduces a MgHf co-doped AlN thin film that exhibits exceptional piezoelectric properties. The MgHfAlN film is not only lead-free but also achieves groundbreaking performance, boasting the world's highest figure of merit (FoM) exceeding 45 GPa. Additionally, its piezoelectric strain constant (d33) exceeds 23 pm/V, and it delivers an impressive output power of 40 mW within a compact device size of just 1cc. This technology holds significant potential for applications in vibration-powered generator, electric field sensors, force sensors, slip sensors, and more.
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The revenue generated from technology transfer is reinvested into universities and researchers as new research funding, which is used to create further research outcomes. To ensure the smooth operation of this cycle, known as the "Intellectual Creation Cycle," we will actively promote technology transfer. The types of seeds we handle include patents, know-how, databases, and programs. We have established a collaborative framework by concluding basic technology transfer agreements with the following universities (as of April 1, 2026): - Tohoku University - Hirosaki University - Iwate University - Akita University - Fukushima University - Yamagata University - Tohoku Gakuin University - Iwate Medical University - Fukushima Medical University - Aizu University - Miyagi University - Hokkaido University - Muroran Institute of Technology - Showa Medical University - Asahikawa Medical University
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