Contract film formation services (test film formation of high-quality reaction films, etc.)
High-quality film deposition using a remote plasma ion beam sputtering device.
We will support the exploration of new materials and the development of film formation processes.
HiTUS Technology Independent current control is performed for the ion source, target, and substrate. With independent control, it becomes possible to freely control not only the sputter rate but also various reactive sputtering processes such as oxide films and nitride films. We strongly support advanced materials research and process development for applications that have been considered difficult with conventional sputtering equipment, such as ferromagnetic film deposition, co-sputtering of metal and ceramic targets, and dielectric/insulating film deposition from metal targets.
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basic information
- Technology to realize ideas in your research process - Independent control of ion supply and sputter rate → Control of sputter rate, film quality, and crystal structure → Control of ionization rate of target material High directivity film deposition → High directivity film deposition characteristic of ion beam sputtering Multi-target mechanism → Wide range of multilayer film deposition Independent control of multiple targets → Co-sputtering alloy deposition by controlling the sputter rate of each target → Multilayer deposition by switching targets Conformal film deposition through bias application control to the substrate → Conformal film deposition even under adverse conditions such as deep trenches and step coverage --- Vast process window during reactive film deposition --- --- Low-temperature film deposition and stress control ---
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Applications/Examples of results
For various film formation test research purposes For new material exploration purposes - Solar power generation - Optical thin films - Batteries and battery materials - Wearable displays - Large-capacity storage devices - MEMS - Various sensors - Magnetic heads - Thin film heads - Thermal heads - Spintronics materials - Heusler alloys - AlScN
Detailed information
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--- Vast Process Window During Reactive Film Formation --- High-density ions supplied from a helicon plasma source ionize the sputtered target material. Since the ionized target material reaches the substrate directly, it is possible to react precisely during film formation on the substrate. This enables the formation of highly reproducible reactive films through a wide process window that was not achievable with conventional sputtering control.
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--- Low-Temperature Film Formation and Stress Control --- Since the ion source and sputter point are independent, the substrate surface is not affected by the thermal impact of plasma irradiation. Additionally, by controlling the sputter rate, stress control during film formation can also be easily managed.
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--- High-density ions generated by a helicon ion source --- High-density ions reaching up to 10^13 cm-3 enable high-rate sputtering. The structure without a grid eliminates the need for maintenance cleaning.
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Company information
For semiconductor, electronic devices, and optical thin film manufacturing equipment, come to us. Our company was established in March 2016 with the aim of providing agency services for several overseas manufacturers with advanced technologies related to vacuum processes, as well as maintenance services for these devices. Our product lineup includes a wide range of equipment such as sputtering, high-density plasma sources and pulse power supplies, ion beam etching and milling, ion beam sputtering, neutral cluster ion beam process equipment, organic material sublimation purification and film deposition equipment, various filters for liquids, and cleaning brushes, among others.