Information on commissioned test film formation services (test film formation of high-quality reaction films, etc.)

Research on Co-sputtering of different materials, such as ferromagnetic targets and metal and ceramic targets, which are considered difficult to film using conventional sputtering devices. We strongly support advanced material research and process development, including the deposition of AlScN, which is attracting attention for next-generation MEMS applications.
This is a groundbreaking technology that uses a helicon ion source as a plasma source, accelerating high-density ions obtained from it by applying a bias voltage to the target. Since it is an ion beam-type deposition method using a remote plasma system, stable film formation can be achieved even with ferromagnetic and dielectric targets, which are challenging for magnetron sputtering devices. By individually controlling the ion source and target application, it is possible to accommodate a wide range of deposition conditions while also achieving high deposition rates.
Independent gas supply near the target and substrate allows for the deposition of various multilayer thin films, including oxide and nitride films. Since the substrate surface is not exposed to plasma, it is possible to maintain a low temperature during film formation.


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Research on co-sputtering of difficult-to-film ferromagnetic targets and foreign materials such as metal and ceramic targets, which have been considered challenging with conventional sputtering equipment.
We strongly support advanced material research and process development, including the film formation of AlScN, which is attracting attention as a next-generation MEM application.