We achieve film formation by freely controlling reactive sputtering and alloy sputtering.
Independent current control is performed for the ion source, target, and substrate. With independent control, not only the sputter rate but also various reactive sputtering processes such as oxide and nitride films can be freely controlled. This device strongly supports advanced material research and process development, enabling the deposition of difficult-to-deposit materials such as ferromagnetic films, Co-sputtering of metal and ceramic targets, and dielectric/insulating films from metal targets. Independent control of ion supply and sputter rate → Control of sputter rate, film quality, and crystal structure → Control of ionization rate of target materials High-directionality film deposition → High-directionality film deposition characteristic of ion beam sputtering Multi-target mechanism → Wide-ranging multilayer film deposition Independent control of multiple targets → Co-sputtering alloy deposition by controlling the sputter rate of each target → Multilayer deposition by switching targets Conformal film deposition through bias application control to the substrate → Conformal film deposition even under adverse conditions such as deep trenches and overhangs.
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basic information
Proprietary HiTUS Technology This is a groundbreaking technology that uses a helicon ion source as a plasma source, allowing for gridless acceleration of high-density ions obtained from it solely by applying a bias voltage to the target. As it is an ion beam-type film deposition method using a remote plasma approach, it enables stable film formation even for ferromagnetic films and dielectric reaction films, which are challenging for magnetron sputtering devices. By individually controlling ion density and target application, it not only accommodates a wide range of film deposition conditions but also achieves high deposition rates. Reactive control is also easy, as the ionized target material can be delivered to the substrate by controlling the ion supply and sputter rate, allowing for reactions during film formation on the substrate surface. With the ability to use multiple targets ranging from 2 inches to 8 inches in diameter and switch between them for multilayer film deposition, co-sputtering with simultaneous application to multiple targets is also easily achievable. Independent gas supply near the target and substrate allows for the reproducible deposition of various multi-reaction multilayer films, including oxide and nitride films. Since the substrate surface is not exposed to plasma, film deposition can be performed while keeping the substrate surface at a low temperature.
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Applications/Examples of results
For various film formation test research applications For new material exploration applications - Solar power generation - Optical thin films - Batteries and battery materials - Wearable displays - Large-capacity storage devices - MEMS - Various sensors - Magnetic heads - Thin film heads - Thermal heads - Spintronics materials - Heusler alloys - Alloy reaction films such as ScAlN
Detailed information
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--- Vast Process Window During Reactive Film Formation --- High-density ions supplied from a helicon plasma source ionize the sputtered target material. Since the ionized target material reaches the substrate directly, it is possible to react precisely during film formation on the substrate. This enables the deposition of highly reproducible reactive films through a wide process window that was not achievable with conventional sputtering control.
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--- Improvement of Target Utilization Efficiency --- The principle of sputtering is "gridless ion beam." The "racetrack" generated by the magnetron method is nonexistent, resulting in a utilization efficiency exceeding 85%, which is highly efficient.
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--- Low-Temperature Film Formation and Stress Control --- Since the ion source and sputter point are independent, the substrate surface is not affected by the thermal impact of plasma irradiation. Additionally, by controlling the sputter rate, stress control during film formation can also be easily managed.
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--- High-density ions generated by a helicon ion source --- High-density ions reaching up to 10^13 cm-3 enable high-rate sputtering. The structure without a grid eliminates the need for maintenance cleaning.
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| Model number | overview |
|---|---|
| S500 Thin Film Sputter Deposition Systems | Research-use remote ion beam sputtering device |
| Contracted Test Film Deposition Service | Test film deposition of high-quality reactive films, etc. |
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Company information
For semiconductor, electronic devices, and optical thin film manufacturing equipment, come to us. Our company was established in March 2016 with the aim of providing agency services for several overseas manufacturers with advanced technologies related to vacuum processes, as well as maintenance services for these devices. Our product lineup includes a wide range of equipment such as sputtering, high-density plasma sources and pulse power supplies, ion beam etching and milling, ion beam sputtering, neutral cluster ion beam process equipment, organic material sublimation purification and film deposition equipment, various filters for liquids, and cleaning brushes, among others.