Production Remote Plasma Ion Beam Sputtering Device
AVP Technology HR-PVD Target Bias Type Ion Beam Sputtering Equipment
Optimal solution for high-rate reactive film deposition production equipment.
By using a helicon plasma source as the ion source, this groundbreaking method accelerates high-density ions obtained from it by applying a bias voltage to the target, achieving high-rate and highly directional film deposition. Independent current control for the ion source, target, and substrate allows for precise control of not only the sputtering rate but also various reactive sputtering processes such as oxide and nitride films. It enables high-rate film deposition of materials that are difficult to deposit with conventional equipment, such as ferromagnetic materials and dielectric/insulating films from metal targets. <Features> ■ High-speed, high-efficiency ion beam sputtering Optimal solution for dielectric and ferromagnetic targets ■ Helicon plasma ion source and target application Achieves both high-speed sputtering and low contamination Reduces running costs by improving target utilization efficiency Low maintenance due to gridless structure Sputtering while keeping the substrate at low temperatures through remote plasma configuration ■ Single wafer processing Improved step coverage Composite film deposition using cluster tools ■ Excellent directionality High-directionality ion beams enable uniform film thickness deposition, resulting in excellent step coverage in film formation.
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basic information
This is a groundbreaking technology that uses a helicon ion source as a plasma source, allowing high-density ions obtained from it to be accelerated without grids solely by applying a bias voltage to the target. As it is an ion beam-type film deposition method using a remote plasma system, it enables stable and fast film formation even for ferromagnetic films and dielectric reactive films, which typically have low deposition rates in magnetron sputtering equipment. By individually controlling the ion density and target application, it not only accommodates a wide range of deposition conditions but also achieves high-rate film formation. The control of ion supply and sputtering rate allows the ionized target material to reach the substrate, facilitating reactive control during film formation on the substrate surface. It enables the production of various reactive films, including oxide and nitride films, with high quality and stability without the need for an additional ion source for reactions. This production equipment is the optimal solution for reactive film formation with the latest materials, including dielectrics like Al2O3 and SiO2, and reactive films such as ferromagnetic materials like Fe, which typically have low deposition rates in conventional magnetron sputtering.
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Applications/Examples of results
High-rate reactive film deposition for dielectric and ferromagnetic film applications Supports stable production with high reproducibility and no time-dependent changes in film deposition - Solar power generation - Optical thin films - Batteries and battery materials - Wearable displays - Large-capacity storage devices - MEMS - Various sensors - Magnetic heads - Thin film heads - Magnetic disks - Thermal heads - Spintronics materials - Heusler alloys - Alloy reaction films such as ScAlN - EUV mask blanks - Organic semiconductors - Resin substrate film deposition
Detailed information
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High-density ions generated by the helicon ion source enable sputtering at a high rate. Due to its gridless structure, maintenance for cleaning is not required.
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High-density ions from the helicon ion source are accelerated and sputtered by applying them to the target. By adopting a remote plasma structure, sputtering can be performed while keeping the substrate at a low temperature, unaffected by ion bombardment from the ion source.
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Achieving film formation with a uniform thickness using a highly directional ion beam generated by a helicon ion source and target application. Excellent film formation with step coverage can be achieved.
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Company information
For semiconductor, electronic devices, and optical thin film manufacturing equipment, come to us. Our company was established in March 2016 with the aim of providing agency services for several overseas manufacturers with advanced technologies related to vacuum processes, as well as maintenance services for these devices. Our product lineup includes a wide range of equipment such as sputtering, high-density plasma sources and pulse power supplies, ion beam etching and milling, ion beam sputtering, neutral cluster ion beam process equipment, organic material sublimation purification and film deposition equipment, various filters for liquids, and cleaning brushes, among others.
