High Rate Ion Beam Sputtering High-Speed Film Deposition System (HR-PVD)
AVP Technology ION Beam HR-PVD
High-rate and high-quality film formation of dielectric and ferromagnetic materials.
This is a high-speed ion beam sputtering (IBD) device that excels in the deposition of dielectrics such as Al2O3 and SiO2, which typically have low deposition rates in conventional magnetron sputtering, as well as ferromagnetic materials like Fe. By using a helicon plasma source as the ion source and a groundbreaking method that accelerates the high-density ions obtained from it through the application of bias voltage to the target, it achieves high-rate and highly directional film deposition. It also contributes to cost reduction in deposition processes using valuable and rare targets by efficiently utilizing the entire target surface. <Features> ■ High-speed, high-efficiency ion beam sputtering Optimal solution for dielectric and ferromagnetic targets ■ Helicon plasma ion source and target application Achieving both high-speed sputtering and low contamination Reduction of running costs through improved target utilization efficiency Maintenance reduction due to gridless structure Sputtering while keeping the substrate at low temperature through remote plasma configuration ■ Wafer processing Improved step coverage Composite film deposition using cluster tools ■ Excellent directionality Uniform film thickness can be achieved with a highly directional ion beam, resulting in excellent step coverage in film deposition.
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basic information
Adoption of remote plasma ion source A groundbreaking sputtering method combining gridless source and target bias ▸ Achieving anisotropic film deposition due to high straightness ▸ Achieving low-temperature film deposition through remote plasma ▸ Reducing maintenance costs through gridless structure ▸ Reducing running costs by improving target utilization efficiency
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Applications/Examples of results
- Magnetic head - Thin film head - Thermal head - Magnetic disk - Spintronics material - MEMS - EUV mask blanks - Organic semiconductor - Resin substrate film formation These are ideal for film formation applications of high magnetic materials and high dielectric materials.
Detailed information
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High-density ions reaching 10^13 cm-3 are achieved at a high rate of sputtering using a helicon ion source. Due to its structure without a grid, maintenance for cleaning is not required.
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High-density ions from the helicon ion source are accelerated and sputtered by applying them to the target. By adopting a remote plasma structure, sputtering can be performed while keeping the substrate at a low temperature, unaffected by ion bombardment from the ion source.
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Achieving film formation with a uniform thickness using a highly directional ion beam generated by a helicon ion source and target application. Excellent film formation with step coverage can be realized.
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Company information
For semiconductor, electronic devices, and optical thin film manufacturing equipment, come to us. Our company was established in March 2016 with the aim of providing agency services for several overseas manufacturers with advanced technologies related to vacuum processes, as well as maintenance services for these devices. Our product lineup includes a wide range of equipment such as sputtering, high-density plasma sources and pulse power supplies, ion beam etching and milling, ion beam sputtering, neutral cluster ion beam process equipment, organic material sublimation purification and film deposition equipment, various filters for liquids, and cleaning brushes, among others.
