Sputtering device "MiniLab series"

We have completely renewed the catalog for the MiniLab series thin film experimental equipment. 【Features of the MiniLab Series】 ◉ Supports sputtering, evaporation (resistive heating, organic, EB), annealing, plasma etching, etc. ◉ Modular design allows for flexible combinations of components (source hybrid types and multi-chamber configurations are possible) ◉ Compact, space-saving design (width 1,200 x depth 560 mm) ◉ Excellent operability: intuitive interface allows for centralized management of all operations via a touch panel without dispersion. We are confident that this will be of great assistance in research and development settings. Please consider it.

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Two thin-film experimental devices are connected via a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected through the load lock. With Moorfield's unique load lock system, connections to the left, right, and rear process chambers are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB Evaporation: 7cc crucible x 6 - Resistance Heating Evaporation x 2 - Organic Evaporation Limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron Cathode x 4 sources for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma Etching Stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique 'soft etching' technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)