The introduction of the laminated substrate reduces the degradation of the forward characteristics of the body diode!
This is a MOSFET made from SiC. By using SiC as the material, it is possible to achieve high voltage resistance and low resistance characteristics that could not be realized with silicon, as well as to reduce switching losses compared to IGBTs. By using it in PFC (power factor correction circuits), DC-DC converters, and inverter circuits, it contributes to the high efficiency of power supplies.
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【Lineup】 ICK16012AW2 (TO-247-3L), VDSS=1200V, VGSS=+22V/-6V, Vth=1.6-4.0, Rds(on)=160mΩ ICK16012AW3 (TO-247-4L), VDSS=1200V, VGSS=+22V/-6V, Vth=1.6-4.0, Rds(on)=160mΩ ICK03212AW2 (TO-247-3L), VDSS=1200V, VGSS=+22V/-6V, Vth=1.6-4.0, Rds(on)=32mΩ ICK03212AW3 (TO-247-4L), VDSS=1200V, VGSS=+22V/-6V, Vth=1.6-4.0, Rds(on)=32mΩ ICK02012AW2 (TO-247-3L), VDSS=1200V, VGSS=+22V/-6V, Vth=1.6-4.0, Rds(on)=20mΩ ICK02012AW3 (TO-247-4L), VDSS=1200V, VGSS=+22V/-6V, Vth=1.6-4.0, Rds(on)=20mΩ
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PFC (Power Factor Correction) Circuit Inverter Circuit UPS (Uninterruptible Power Supply) DC-DC Converter
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Isahaya Electronics began production of small signal transistors in 1973 and has evolved its semiconductor technology into design technologies for gate drivers and DC/DC converters. In recent years, the company has also focused on developing high-efficiency, high-power-factor power supply technologies to contribute to carbon neutrality. (Three-phase PFC, 1500V input compatible DC/DC converters, bidirectional converters, etc.) Meanwhile, to meet diverse needs, small signal transistors have also evolved with enhanced functionality and integration, expanding the lineup of high-voltage, high-current transistors, MOSFETs, and analog ICs.








