High-performance GaN HEMT epitaxial wafer

Providing high-performance GaN epitaxial wafers! Ensuring high reliability even during long hours of continuous operation.

WaveLord's "GaN HEMT-on-SiC Epitaxial Wafer" is an epitaxial solution that supports the high output, high frequency operation, and high reliability required for RF devices. It features excellent crystallinity, ensuring high reliability even during long periods of continuous operation. The high thermal conductivity of the SiC substrate quickly dissipates heat, maintaining stable performance even during high output operation. This contributes to the miniaturization of transistors due to high power density and the overall lightweight and space-saving design of RF equipment. Additionally, with its unique crystal growth technology, it demonstrates excellent buffer leak characteristics and high thermal reliability in device evaluations, maintaining excellent high-frequency characteristics up to the tens of GHz range. 【Features】 ■ Maintains stable performance due to the high thermal conductivity of the SiC substrate ■ Contributes to the miniaturization of transistors and the overall lightweight and space-saving design of RF equipment ■ Demonstrates excellent buffer leak characteristics and high thermal reliability through unique crystal growth technology ■ Achieves extremely excellent uniformity and crystallinity within the wafer *For more details, please download the PDF or feel free to contact us.

WaferOther semiconductors