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  6. Microwave Ion Source EMIS-221C

Microwave Ion Source EMIS-221C

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EMIS-221C

last updated:Oct 01, 2010

アリオス
アリオス
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Microwave Ion Source EMIS-221C

Microwave Excitation Ion Source with Magnetic Field, External Chamber Type, Lamic Discharge Tube Type 【Features】 ○ Ion beams with low metal contamination can be obtained due to ultra-high vacuum specifications. ○ The plasma chamber is made of high-purity alumina, allowing for ion beams with low metal contamination. ○ Can be used with various ultra-high vacuum devices, such as MBE systems, due to a completely metal-sealed structure. ○ Ion acceleration is possible with the use of a high-voltage power supply (optional) (can also be used as a radical source or plasma source). ○ Microwave is supplied via a coaxial cable, eliminating the need for cumbersome waveguide connections. ○ External control via sequencer or computer is possible. ● For other functions and details, please download the catalog.

    Etching EquipmentOther semiconductor manufacturing equipment
maikurohaiongen_emis_221c.jpg

Microwave Ion Source EMIS-221C

maikurohaiongen_emis_221c.jpg
maikurohaiongen_emis_221c.jpg

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Microwave Excited Ion Source with Magnetic Field, External Chamber Type, Lamic Discharge Tube Type 【Features】 ○ Due to ultra-high vacuum specifications, ions with minimal metal contamination can be obtained. ○ The plasma chamber is made of high-purity alumina, allowing for ions with minimal metal contamination. ○ With a completely metal-sealed structure, it can be used in various ultra-high vacuum devices such as MBE systems. ○ By using a high-voltage power supply for acceleration (optional), ion acceleration is possible (can also be used as a radical source or plasma source). ○ Since microwaves are supplied via a coaxial cable, cumbersome waveguide connections are unnecessary. ○ External control via sequencers or computers is possible. ● For other functions and details, please download the catalog.

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Applications/Examples of results

【Applications】 ○ Ion doping ○ Etching ○ Film formation assist

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Microwave Ion Source EMIS-221C

Microwave Ion Source EMIS-221C

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アリオス

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Industrial Machinery

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In 1972, the first president, Horita, established Taisei Sangyo Co., Ltd. using the entrance of his home as a workplace, and since then, we have been dedicated to technology development and research. Initially, we were involved in the development of devices such as the Polack counter for the Meteorological Research Institute, starting our work in the field of atmospheric science. Subsequently, we expanded our work into the vacuum world by starting maintenance services for leak detectors. Around the 10th anniversary of our founding, work in ultra-high vacuum began to increase, and by the 15th anniversary, we were able to manufacture small devices. Currently, our scope of work has significantly expanded, not only covering ultra-high vacuum, MBE, CVD, ECR, and RF radical sources, but also advancing the development of functional components utilizing various plasmas, ions, or electrons. In the future, we aim to become a small enterprise that can truly compete in the world of cutting-edge technology.

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