STEM-EDS observation can confirm the shape and layer structure of the insulating film between semiconductor Poly-Si (polysilicon) and can be applied to investigate the causes of semiconductor defects.
In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information regarding the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. Additionally, the following features are available:
- Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam
- Determination of whether the observation target is crystalline
- Acquisition of information on crystal defects (dislocations, twins, etc.) within the crystal
In this case, we introduce "Evaluation of Semiconductor Insulating Films using STEM-EDS." This case yielded no issues, but abnormal detection is also possible.
Please take a moment to read the PDF materials.
Furthermore, in addition to this STEM, our company excels in identifying defective areas by performing 3D reconstruction on specific regions of the sample in combination with FIB.
We would be happy to provide a demonstration, so please feel free to reach out to us.
Seiko Future Creation Official Website
https://www.seiko-sfc.co.jp/
*Other materials are also available. If you request them through the inquiry button, we will send them to you.
