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Analysis(lsi) - List of Manufacturers, Suppliers, Companies and Products

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Analysis Product List

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[Analysis Case] Evaluation of Crystal Structure by Micro XRD Analysis

[Analysis Case] Evaluation of Crystal Structure by Micro XRD Analysis

XRD measurements in micro areas are possible.

We will introduce a case where XRD measurements were conducted by narrowing the X-ray beam to Φ400μm, allowing us to obtain crystal information targeting a specific area rather than the entire surface. In the XRD measurement results of the printed circuit board sample, Cu and BaSO4 were detected at all measurement points (1) to (3), and a peak from Au was detected at the measurement point (1), which is the electrode. This aligns well with the results from XRF measurements. Thus, it is possible to identify crystal structures by targeting regions of several hundred micrometers with different compositions and crystallinities. Measurement methods: XRD, XRF Product fields: LSI, memory, electronic components Analysis purposes: Composition evaluation, identification, structural evaluation For more details, please download the materials or contact us.

  • Contract Analysis

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Analysis of crystal grains below 30nm using the EBSD method.

Analysis of crystal grains below 30nm using the EBSD method.

EBSD: Electron Backscatter Diffraction

By conducting EBSD analysis on thinned samples, higher spatial resolution can be achieved compared to conventional bulk samples.

  • Contract Analysis

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Extreme point measurement

Extreme point measurement

XRD: X-ray diffraction method

Pole figure measurement is a method that focuses on specific crystal planes and evaluates the distribution of crystal orientations by directing X-rays from various directions onto the sample. The detector is fixed at the diffraction angle (2θ) of the crystal plane of interest, and the two parameters, α (the tilt angle of the sample) and β (the in-plane rotation angle of the sample), are varied to measure crystal planes tilted in all directions. This indicates that the crystal orientations are concentrated in the directions where high diffraction intensity is observed. Additionally, the measurement results are represented in a pole figure as shown in the diagram at the bottom right.

  • Contract Analysis

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[Analysis Case] Analysis of H termination on Si surface

[Analysis Case] Analysis of H termination on Si surface

Qualitative and relative comparison of SiH and states on the Si surface due to differences in processing.

We compared the states of the Si surface after HF treatment and after ozone treatment. In the positive ion spectrum, the peak intensity of Si was different. The weaker Si intensity after HF treatment is due to Si being metallic, while the stronger Si intensity after UV-ozone cleaning and in the As Received state is due to Si being oxide-based. From the negative ion spectrum, fragment ions reflecting the surface state were detected: SiF, SiH, and Six series after HF treatment, and SiO2 series after UV-ozone cleaning and in the As Received state.

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  • Contract Analysis

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[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

Microscopic structural analysis of amorphous films is possible through simulation.

Amorphous SiNx (a-SiNx) films exhibit significant changes in physical properties from semiconductors to insulators due to compositional variations such as the N/Si ratio, making them suitable for a wide range of applications, including gate insulating films for transistors. On the other hand, experimental methods capable of atomic-level microscopic structural analysis for materials with non-crystalline amorphous structures are limited. Therefore, creating and analyzing amorphous structures with various compositions and densities through simulation becomes an effective tool. This document presents examples of structural analysis of a-SiNx films using molecular dynamics calculations.

  • Contract Analysis
  • Memory

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

  • Contract Analysis
  • Other semiconductors
  • Other contract services

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Power product electrical analysis services

Power product electrical analysis services

Design and development support considering the transmission line characteristics of power products.

Our company provides design support based on a wide range of experience in semiconductor application products, from LSI to power electronics. In the field of power electronics, represented by inverters, which has gained attention in recent years, solving challenges during switching is a key point. We can offer comprehensive design support, from transmission line analysis using electromagnetic field analysis simulators to product evaluation, and further to analysis and verification of circuit simulations.

  • Calibration and repair

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Extrusion Resin Analysis (CAE)

Extrusion Resin Analysis (CAE)

The entire process from design to the creation of a 3D flow model, flow analysis, and molding is testable!

At Axmolding, specialists handle the process, and we can take on everything from consulting for development and design to execution as a whole. Our company can test a complete flow from design to creating 3D models of flow paths, flow analysis, and actual molding. We are capable of creating 3D models of extrusion flow paths that are complex and have many curved surfaces. Additionally, we use Japanese-made software from HASL for analysis. 【Analysis Software】 ■ Materialfi - Resin calculation formula definition ■ FLATSimulator - For T-die analysis ■ SpiralSimulator - For round die analysis ■ SingleSrewSimulator - For single screw analysis ■ FlowSimulator3D - For 3D, irregular shapes, and multilayer analysis For more details, please refer to our catalog or feel free to contact us.

  • Extrusion Machine
  • Contract Analysis
  • Other analyses

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Numerical analysis solution

Numerical analysis solution

Supporting your product development and problem-solving with fluid analysis and structural analysis using 3D CAE!

Our company supports model-based development, which is increasingly in demand in the automotive industry, by providing necessary CAE for requirement analysis, control design (control target models), and verification tools (MILS, HILS). Leveraging this know-how, we conduct analysis work that concretizes the physical phenomena required for products in the upstream stages of product development using 1D CAE. In model-based development, we advance the development while verifying based on the "model" created on the computer. We assist in addressing challenges (efficiency, quality assurance) in the development process by developing tools tailored to our customers' needs. 【Features】 - Development of tools for 1D simulation used in the requirement analysis stage of products and conducting analysis work using 1D simulation. - Conducting model-based development, including the creation of control target models (plant models) using MATLAB/Simulink. - Development and verification of necessary verification tools (MILS, HILS) in the downstream part of model-based development. *For more details, please refer to the PDF materials or feel free to contact us.

  • Contract Analysis
  • Other analyses

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Contracted analysis service

Contracted analysis service

Support for synchronizing design and analysis with the necessary analysis items for the product design process unit!

Our company supports the synchronization of design and analysis from the early stages of design through static analysis, eigenvalue analysis, contact analysis, buckling eigenvalue analysis, and time history response analysis. We provide the necessary analysis items tailored to your product design process. Additionally, we have extensive experience in contract analysis using general commercial tools. Please feel free to consult us if you have any requests. 【Software We Use】 ■ Creo Parametric, Simulate ■ ProTOp ■ FloEFD ■ Abaqus ■ I-sight ■ Ls-DYNA ■ Transmission3D *For more details, please download the PDF or feel free to contact us.

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Power semiconductor analysis service

Power semiconductor analysis service

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu office in 1993, we have cultivated our own unique analysis and evaluation techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 ■ OBIRCH analysis supports not only Si but also SiC and GaN devices ■ FIB processing is possible from either side ■ Visualization of the depletion layer formed at the PN junction ■ Elemental analysis such as EDS and EELS is also supported *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
  • Contract Analysis
  • Semiconductor inspection/test equipment

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[Analysis Case] Simulation of Impurity Diffusion in Silicon Crystals

[Analysis Case] Simulation of Impurity Diffusion in Silicon Crystals

It is possible to determine the diffusion pathways and barriers through simulation.

The electrical, optical, and magnetic properties of semiconductors are strongly influenced by defects and impurities present in the system. Therefore, to achieve the desired material properties, it is necessary to understand and control the behavior of defects and impurities. However, evaluating atomic-level microscopic behavior through experimental methods is challenging, making approaches using computational simulations effective. This document presents a case study using first-principles calculations with the NEB (Nudged Elastic Band) method to evaluate the diffusion pathways and barriers of metal impurities (Fe) in silicon crystals.

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  • Contract Analysis
  • Contract measurement

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Report: Detailed Structural Analysis of Application Processor Logic

Report: Detailed Structural Analysis of Application Processor Logic

This is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core).

This report is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core) application processor. The MT6592 features an ARM Cortex-A7 processor and is marketed as a "true octa-core" SoC, equipped with a 4-core ARM MaliTM GPU, supporting Full HD displays, cameras up to 16 million pixels, multi-mode cellular modems, and dual-band 802.11n Wi-Fi, among other features. The MT6592 is manufactured using TSMC's HPM CMOS process with an 8-layer metal (7 Cu, 1 Al) structure, high-k metal gate (HKMG), and a gate length of 28nm. 【Features】 ○ Crystal orientation of the transistor channel <110> ○ Hafnium oxide (HfO2) material for the gate insulating film ○ Dual work function metal gate ○ nMOS (NiSi) and pMOS (NiSiGe) source/drain regions, and low-k interlayer insulating film For more details, please contact us or download the catalog.

  • Analysis Services

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