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MOSFETの製品一覧

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[Data] Shirutoku Report No. 52 #Avalanche Test (1)

[Data] Shirutoku Report No. 52 #Avalanche Test (1)

Avalanche surrender, UIS test circuits and waveforms, etc.! An explanation of the avalanche tolerance testing of power MOSFETs.

★★Shirutoku Report: Useful Information You Should Know★★ The avalanche rating measured in avalanche testing refers to the amount of energy that a power device can withstand before it begins to conduct current rapidly and ultimately fails when a voltage exceeding its breakdown voltage is applied. This report explains avalanche breakdown, UIS test circuits, and waveforms using diagrams. To verify whether there are any issues in the event that the device enters avalanche mode, it is necessary to investigate the avalanche rating of power MOSFETs when designing power electronics circuits. [Contents] ■ Image of avalanche breakdown ■ Test circuit and waveform for measuring avalanche rating *For more details, please refer to the PDF document or feel free to contact us.

  • Other measurement, recording and measuring instruments
  • Other contract services
  • Contract Inspection

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General-purpose N-channel MOSFET "XP23/XP26 Series"

General-purpose N-channel MOSFET "XP23/XP26 Series"

Built-in gate protection diode for electrostatic discharge protection! MOSFET compliant with EU RoHS directive.

The "XP23/XP26 Series" is a general-purpose N-channel MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in various applications such as relay circuits and switching circuits. As an electrostatic countermeasure, it has a built-in gate protection diode. The package adopts a compact SOT-23 (TO-236) (2.9 X 2.4 X h1.15mm), contributing to the miniaturization of equipment. 【Features】 ■ Built-in gate protection diode ■ Low on-resistance ■ High-speed switching *For more details, please refer to the PDF document or feel free to contact us.

  • Other electronic parts

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

  • Other semiconductors
  • Other electronic parts

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[Data] WTI Blog October 2020

[Data] WTI Blog October 2020

Key points to consider in power supply design for DC-DC converter design, including avalanche testing of power MOSFETs!

This document summarizes the WTI blog of Wave Technology Co., Ltd., a "development and design promotion business" that addresses the shortage of engineers, from October 2, 2020, to October 30, 2020. It introduces topics such as "Important Ioff Function During Partial Power Down" from October 2, 2020, "Points to Consider in DC-DC Converter Design Power Supply Design" from October 7, 2020, and "What is the Avalanche Test of Power MOSFETs?" from October 30, 2020. Additionally, it includes a wealth of useful information related to products and industries. We encourage you to read it. [Contents (excerpt)] ■ October 2, 2020: Important Ioff Function During Partial Power Down ■ October 6, 2020: Steps in Circuit Board Design and the Joys of a Second-Year Engineer! ■ October 7, 2020: Points to Consider in DC-DC Converter Design Power Supply Design Part 2 ■ October 8, 2020: Features of Switching Power Supply Circuit Methods ■ October 9, 2020: Reasons Why OTA Implementation in IoT Devices is Surprisingly Slow *For more details, please refer to the PDF document or feel free to contact us.

  • Other contract services
  • Embedded system design service
  • Circuit board design and manufacturing

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Introduction to Microsemi's Silicon Carbide Product Lineup

Introduction to Microsemi's Silicon Carbide Product Lineup

Robustness that maintains performance even under abnormal operating conditions (temperature, humidity, load)!

Microsemi Corporation develops Silicon Carbide (SiC) chips in-house. The lineup includes MOSFETs (700V, 1200V, 1700V classes) and Schottky Diodes (650V, 1200V, 1700V). They exhibit robustness that maintains performance even under abnormal conditions (temperature, humidity, load) and demonstrate excellent operational performance in high-frequency applications. [Features] - Proposals for custom modules optimized for customer applications, not just standard catalog products. - A variety of options are available for chip, circuit configuration, package type, and heat dissipation materials in custom module development. - Design proposals for the most suitable modules based on customer requirements, leading to mass production supply. For more details, please contact us or download the catalog.

  • Transistor
  • diode

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Zener diode integrated MOSFET "INKE Series"

Zener diode integrated MOSFET "INKE Series"

Surge tolerance increased by built-in Zener and stable high avalanche tolerance achieved!

The "INKE series" features a built-in Zener diode connected between the drain and source, which protects the MOSFET from back electromotive force during motor and solenoid drive operations. By incorporating a Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET, the Zener diode will break down first when overcurrent/voltage is applied to the drain, thereby protecting the built-in MOSFET. The avalanche and surge ratings between the drain and source have been significantly improved, eliminating the need for a freewheeling diode for back electromotive force recovery. 【Features】 ■ Built-in Zener diode with a reverse breakdown voltage lower than that of the built-in MOSFET ■ The Zener diode breaks down first when overcurrent/voltage is applied to the drain, protecting the built-in MOSFET ■ Significant improvement in avalanche and surge ratings between the drain and source ■ No need for a freewheeling diode for back electromotive force recovery *For more details, please refer to the PDF document or feel free to contact us.

  • diode
  • Transistor

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MOS FET Single P-Channel (ELM43401CA)

MOS FET Single P-Channel (ELM43401CA)

[Recommended] This is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance.

The single power MOSFET series is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance. The single P-channel ELM43401CA is a high-current MOSFET with the same characteristics of low input capacitance, low voltage drive, and low ON resistance. Some products are ESD resistant due to protective circuits. Please check our website. *For more details on the 43401CA, please refer to the catalog or feel free to contact us.

  • Transistor

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MOS FET Single N-Channel (ELM43400CB)

MOS FET Single N-Channel (ELM43400CB)

[Recommended] This is a high-current MOSFET with characteristics of low input capacity, low voltage operation, and low ON resistance.

The single power MOSFET series is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance. The single N-channel ELM43400CB is a high-current MOSFET with the same characteristics of low input capacitance, low voltage drive, and low ON resistance. Some products are ESD resistant due to protective circuits. Please check our website for more information. *For more details on the 43400CB, please refer to the catalog or feel free to contact us.

  • Transistor

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200V Ultra Junction X4 Class MOSFET

200V Ultra Junction X4 Class MOSFET

Heat design is simplified, allowing for higher efficiency.

The "200V Ultra Junction X4 Class MOSFET" is a low RDS(on) MOSFET suitable for high-efficiency applications. This product is available in TO-220, TO-247-3L, TO-263, and TO-268HV packages, with a nominal rated current of 60 to 220A. Please feel free to contact us if you have any requests. 【Benefits】 ■ Reduced conduction loss due to low on-resistance RDS(on) ■ Simplified thermal design due to low thermal resistance RthJC ■ High surge tolerance provided by high avalanche energy capacity EAS ■ Reduced gate driver requirements due to decreased gate charge Qg *For more details, please download the PDF or feel free to contact us.

  • Other electronic parts

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Introduction page of Potens Semiconductor Corp

Introduction page of Potens Semiconductor Corp

Potent Semiconductor Co., Ltd. is a fabless power semiconductor manufacturer established in Taiwan in September 2012.

■New Product Development ⇒ Launching next-generation semiconductor products ■Quality ⇒ Thorough quality support ■Technical Support ⇒ Providing technology tailored to the needs of each design stage ■Delivery Time ⇒ Please consult with us. Our products are widely adopted for mobile devices, 5G communication equipment, autonomous driving devices, wireless charging equipment, cloud server applications, industrial equipment, and automotive applications. We also have products that can serve as alternatives to those from domestic and international manufacturers, so please feel free to contact us when replacements are needed due to EOL, etc. As a feature of our technical support, our application technology team, composed of members with over 20 years of semiconductor development experience and design expertise accumulated at power supply manufacturers, collaborates to solve technical challenges that may arise during the adoption process (circuit configuration, efficiency, noise, heat generation, etc.) together with our customers. Additionally, we offer a wide range of products from low-voltage to high-voltage (600V - 1500V).

  • Transistor

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MOSFET with built-in Zener diode (for driving varistor-integrated relays)

MOSFET with built-in Zener diode (for driving varistor-integrated relays)

Optimal for driving high inductance relays! Built-in Zener MOSFET has further evolved.

To support relay drive with high inductance that incorporates a barista, we have significantly enhanced the area and voltage resistance of the Zener diode section of the Zener-integrated MOSFET. This has achieved excellent breakdown tolerance, allowing it to withstand transient high voltages. It can be used with greater confidence in high-load applications where reliability is required.

  • Transistor

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