Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
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Optimal for switching power supply circuit!
INK013EAP1 is an N-channel MOSFET in a SOT-89 package with a maximum rating of VDSS=500V and ID=0.5A. This maximum rating of VDSS is top-class in our company, making it an ideal component for the startup circuit that supplies driving power to control ICs in switching power supplies.
Optimal for driving inductive loads. Freewheeling diodes can be reduced!
It has a built-in Zener diode for active clamp between the gate and drain, which protects the MOSFET from back electromotive force during motor and solenoid drive operations through active clamp operation. This eliminates the need for a freewheeling diode for regenerative back electromotive force. Additionally, it also has a built-in bias resistor, contributing to the reduction of peripheral components.
From in-vehicle systems to communication devices, for power semiconductors, choose Cystech.
**Company Overview** Cystech Electronics Corp. is a power semiconductor manufacturer established in Taiwan in 2002. The company focuses on products such as MOSFETs, transistors, diodes, and ICs, and has obtained certifications including ISO9001, ISO14001, and ISO45001. It is listed on the Taiwan Stock Exchange and provides high-reliability, high-performance products for the global market. **Main Products** MOSFETs (from low voltage to high voltage, including high-speed types) Transistors (bipolar, digital) Diodes (switching, Zener, Schottky) **Strengths and Reliability** Established a manufacturing and assembly production network in Taiwan, Japan, and China Implemented a strict quality assurance system and reliability evaluation framework Continuous improvement process utilizing customer feedback
Product introduction of power MOSFET products for power supply applications.
【BOOST MOS】 Application: Boost-type DC-DC converters, etc. Package: TO-252, TO-220FP Voltage Rating: 100V to 250V Features: Low R<sub>DS(ON)</sub>, high current capability, low Qg 【BUCK MOS】 Application: Buck-type DC-DC converters Package: TO-220FP Features: Ultra-low on-resistance (5.3mΩ and above) 【SR MOS (Synchronous Rectification MOSFET)】 Application: Efficiency improvement in rectification stages Features: High-speed switching, low Qg 【Power Saving MOS】 For ultra-low current applications (e.g., 0.033A class) Compact SOT-23 package 【Power Switch MOS】 Application: ON/OFF control for power lines Package: Various including DFN3x3, SOP-8 Features: Low on-resistance, high current control capability 【Signal Switch MOS】 For low current and low voltage switching applications Supports ultra-compact packages (such as SOT-23) 【GaN/SiC WBG Devices】 GaN HEMT and SiC SBD (Schottky Barrier Diode) High voltage products planned, such as 650V class
Expanding the lineup of low-voltage drive MOSFETs!
In mobile devices such as mobile phones, it is necessary to reduce circuit losses in order to decrease power consumption and extend operating time, which has led to a demand for low-voltage driven MOSFETs. As our first initiative, we are expanding our offerings for 1.8V and 1.5V driven products through optimization of the wafer process, and we plan to develop 1.2V in the second phase and 0.9V in the third phase.
