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Spectrometer Product List and Ranking from 76 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 15, 2025～Nov 11, 2025
This ranking is based on the number of page views on our site.

Spectrometer Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 15, 2025～Nov 11, 2025
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  2. MSHシステムズ Tokyo//Optical Instruments
  3. サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
  4. 4 オプトシリウス Tokyo//others
  5. 5 サンインスツルメント 本社 Tokyo//Trading company/Wholesale
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Spectrometer Product ranking

Last Updated： Aggregation Period:Oct 15, 2025～Nov 11, 2025
This ranking is based on the number of page views on our site.

  1. JPS-9030 Photoelectron Spectroscopy Device (XPS) アズサイエンス 松本本社
  2. Small Space Offset Raman Spectrometer Vaya for Raw Material Acceptance Inspection ジャパンマシナリー
  3. [TEM-EDX] Energy Dispersive X-ray Spectroscopy (TEM) 一般財団法人材料科学技術振興財団　MST
  4. Timegate Raman Spectrometer PicoramanM3 HORIZO(ホライゾ)
  5. 4 Fully Automated X-ray Photoelectron Spectroscopy Device 'K-Alpha' サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K.

Spectrometer Product List

166～180 item / All 233 items

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[SEM-EDX] Energy Dispersive X-ray Spectroscopy (SEM)

[SEM-EDX] Energy Dispersive X-ray Spectroscopy (SEM)

It is a method for conducting elemental analysis and compositional analysis by detecting characteristic X-rays generated by electron beam irradiation and spectrally analyzing them by energy.

EDX is a method for performing elemental and compositional analysis by detecting characteristic X-rays generated by electron beam irradiation and spectrally analyzing them by energy. It is also referred to as EDS: Energy Dispersive X-ray Spectroscopy. In many cases, it is attached to SEM or TEM, and this document will explain EDX attached to SEM. - The entire energy measurement range (from B to U) can be measured simultaneously in a short time. - It has excellent detection efficiency, allowing measurements with a low probe current. - Analysis can be easily performed without the need for pretreatment, except for special samples. - It is suitable for the analysis of unknown samples. - Measurements can be conducted in a frozen or cooled state using a cryo holder.

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[TEM-EELS] Electron Energy Loss Spectroscopy

[TEM-EELS] Electron Energy Loss Spectroscopy

By measuring the energy lost due to interactions with atoms as electrons pass through thin film samples, the constituent elements and electronic structure of the material can be analyzed.

EELS analysis is a method that measures the energy lost by electrons as they pass through thin samples due to interactions with atoms. It can analyze the constituent elements and electronic structure of materials. Compared to the elemental analysis device (EDX) attached to a TEM, it has the following features: - Better sensitivity for light elements compared to EDX - Higher energy resolution compared to EDX - Higher spatial resolution compared to EDX, making it difficult to detect surrounding information - Chemical state analysis is possible for certain elements

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[Analysis Case] Evaluation of Bone Condition Before and After HF Treatment

[Analysis Case] Evaluation of Bone Condition Before and After HF Treatment

Evaluation of the state before and after drug solution treatment using Raman analysis.

HF (hydrofluoric acid) is widely used in processes such as wet etching of SiO2 and plays a very important role in semiconductor manufacturing. However, it is also a very dangerous chemical that can penetrate the skin and damage bones, so care must be taken when handling it. The bone erosion caused by HF occurs because Ca, which exists in the bone as apatite, reacts with HF to produce CaF2. This document presents a case study evaluating the changes in this reaction using Raman analysis.

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[Analysis Case] Band Gap Evaluation of Oxidized and Nitrided Thin Films

[Analysis Case] Band Gap Evaluation of Oxidized and Nitrided Thin Films

High-precision band gap evaluation is possible through combined analysis of XAFS and XPS.

The band gap of thin film samples has been measured using analytical methods such as UV-Vis, PL, and XPS, but the cases that could be evaluated were limited due to constraints related to the sample structure, such as materials, film thickness, and substrates. This time, through the combined analysis of XAFS and XPS, it has become possible to reduce the constraints of the sample structure and achieve a higher precision band gap evaluation than before. This method is particularly effective for the evaluation of various oxide and nitride films. This document presents a case study on the band gap evaluation of silicon nitride (SiN) films. Measurement methods: XAFS, XPS. Product fields: solar cells, lighting, oxide semiconductors, power devices. Analysis purpose: evaluation of electronic states. For more details, please download the document or contact us.

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The influence of adsorbed oxygen in XPS.

The influence of adsorbed oxygen in XPS.

XPS: X-ray Photoelectron Spectroscopy

XPS is a method for obtaining information about the composition and bonding state of the sample surface (to a depth of about several nanometers), but by combining it with ion irradiation for sputter etching, it is also possible to evaluate the internal structure of the sample and depth distribution. However, in evaluations involving sputter etching, due to the principles and measurement mechanisms of XPS, the amount of oxygen may be overestimated due to the influence of adsorbed oxygen, so caution is required. In the case of evaluating samples that easily adsorb oxygen (such as Ti, TiN, AlN, etc.) or focusing on trace amounts of oxygen, the influence of adsorbed oxygen becomes significant, so comparisons between samples and analyses using SIMS are recommended.

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[Analysis Case] Evaluation of the Skin Permeability of Melbromin

[Analysis Case] Evaluation of the Skin Permeability of Melbromin

Information about valence bands and intra-gap levels can be obtained by element.

Soft X-ray emission spectroscopy (SXES) using synchrotron radiation is widely used as a method to evaluate the electronic states of materials because it allows for the direct acquisition of the partial density of states (pDOS) near the Fermi level for each element constituting the material. Furthermore, the characteristics of this method include: 1. Information from the bulk can be obtained, 2. It can be evaluated without being affected by charging effects even for insulators, and 3. It has a low detection limit (less than 1 atomic %), making it particularly effective for evaluating materials containing light elements (such as B, C, N, O). In this document, we will introduce the SXES spectrum of a GaN substrate as a measurement example.

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[Analysis Case] Foreign Substance Analysis on Metal Components by Raman

[Analysis Case] Foreign Substance Analysis on Metal Components by Raman

Measurement targeting microdomains is possible.

Foreign substances attached to manufacturing equipment or parts can affect product defects and equipment operation issues. By appropriately analyzing and evaluating these foreign substances, it is possible to investigate the causes of their occurrence and improve the defects. This document presents the results of evaluating the components of foreign substances attached to metal materials using Raman analysis. Raman can measure micro-regions of about 1μm, allowing for the acquisition of information regarding the molecular or crystal structure of targeted areas, making it effective for qualitative analysis of sparsely present foreign substances.

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[Analysis Case] Verification of Reduction Treatment for Sn Oxide

[Analysis Case] Verification of Reduction Treatment for Sn Oxide

Comparison of XPS and computational simulations: Analysis of electronic states from the valence band spectrum.

XPS is a method for evaluating the composition and bonding state of a material based on the photoelectron spectrum from inner shell levels. On the other hand, the valence band spectrum, which reflects the states of the outer shell electrons, appears near the Fermi level. This document presents a case study that verifies the reduction treatment of Sn oxides by comparing and discussing the density of states calculated through first-principles calculations with the valence band spectrum obtained by XPS. Utilizing computational simulations allows for a deeper understanding of the XPS spectrum obtained.

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Hard X-ray Photoelectron Spectroscopy

Hard X-ray Photoelectron Spectroscopy

HAXPES is an analytical method that uses hard X-rays as the excitation light for XPS (X-ray photoelectron spectroscopy).

It is also referred to as HX-PES or HXPES. Due to high-energy X-ray excitation, it allows for bulk state evaluation up to approximately 50 nm deep, which is several to about 10 times deeper than conventional XPS, as well as damage-free evaluation of bonding states at interfaces. This device is a laboratory instrument equipped with a GaKα source (9.25 keV), which enables a reduction in the time lag from sample preparation to measurement. - Bulk-sensitive state evaluation (approximately up to 50 nm) - Non-destructive evaluation of buried interface bonding states - Evaluation using deep inner shell orbitals (avoiding overlapping Auger peaks in XPS, analysis using the non-split 1s orbital) It also includes options for measurements combined with sputtering using GCIB (Gas Cluster Ion Beam), angle-resolved measurements, Al source (1.49 keV), neutralization guns, and measurements under non-exposure to the atmosphere. - Damage-free sputter cleaning using GCIB (depth profiling is generally not possible) - Depth-direction comparison of bonding states using Al source and angle-resolved measurements - Evaluation under non-exposure to the atmosphere

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[Analysis Case] Measurement of Partial Density of States of GaN

[Analysis Case] Measurement of Partial Density of States of GaN

Information about valence bands and gap states can be obtained by element.

Soft X-ray emission spectroscopy (SXES) using synchrotron radiation is widely used as a method to evaluate the electronic states of materials, as it allows for the direct acquisition of the partial density of states (pDOS) near the Fermi level for each element constituting the material. Furthermore, the characteristics of this method include: 1. Information from the bulk can be obtained. 2. It can be evaluated without being affected by charging effects, even for insulators. 3. The detection limit is low (<1 atomic%). These features make it particularly effective for evaluating materials containing light elements (such as B, C, N, O). In this document, we will introduce the SXES spectrum of a GaN substrate as a measurement example.

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[Analysis Case] Evaluation of Composition Distribution of Organic Films by Raman Mapping

[Analysis Case] Evaluation of Composition Distribution of Organic Films by Raman Mapping

It is possible to visualize the in-plane distribution of organic components (inorganic components can also be included)!

Our organization offers composition distribution evaluation of organic films using Raman mapping. The properties such as mechanical characteristics, thermal resistance, and durability change by mixing materials. It is important to link material properties with mixing conditions in material development, and using dispersion as an indicator is effective. This document presents a case study of mapping the distribution of PS (polystyrene) and PCL (polycaprolactone) using Raman. By comparing the characteristic Raman peaks of each material, it is possible to separate the components of the mixture. Component separation from PCL was performed through spectral analysis around the PS-specific peak at approximately 3050 cm-1. [Measurement Method / Processing Method] ■ [Raman] Raman Spectroscopy *For more details, please download the PDF or feel free to contact us.

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Technical Data: High-Speed Imaging Compatible Confocal Microscopic Laser Raman

Technical Data: High-Speed Imaging Compatible Confocal Microscopic Laser Raman

Introducing a high-performance micro-Raman system! Free materials available!

This document contains technical information about Bruker's high-performance system "SENTERRA II," which caters to routine analyses in quality control and advanced research fields. It provides detailed information about the product features and main specifications. [Contents] ■ Next-generation compact micro-Raman ■ Compatible with various applications ■ Complies with various standards ■ Main specifications *For more details, please refer to the PDF document or feel free to contact us.

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Technical Data: Application of Micro-Raman Spectroscopy in Pharmaceuticals

Technical Data: Application of Micro-Raman Spectroscopy in Pharmaceuticals

Introducing the application of the Microscopic Raman SENTERRA II to pharmaceuticals! Free materials available!

This document is a technical material that outlines the advantages of utilizing the confocal micro-Raman spectroscopy system "SENTERRA II" in the pharmaceutical field. [Contents] ■ Overview of the features of the micro-Raman spectroscopy system SENTERRA II ■ Feature 1: Excellent user convenience ■ Feature 2: Support for validation needs ■ Feature 3: Powerful spectroscopic performance ■ Data security, integrity, and traceability *For more details, please refer to the PDF document or feel free to contact us.

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High-throughput screening of pharmaceuticals using FT-Raman.

High-throughput screening of pharmaceuticals using FT-Raman.

[Free Gift] Technical document introducing examples of applications for qualitative and quantitative analysis of pharmaceuticals.

In recent years, the pharmaceutical industry has placed significant importance on high-throughput screening technologies in the formulation development process, similar to the drug discovery process. In particular, high levels of automation are simultaneously required for the identification and classification of solid forms. Here, we introduce examples of applications for qualitative and quantitative analysis of pharmaceuticals using our "FT-Raman spectrometer" and "high-throughput screening (HTS) accessories." [Contents] ■ Introduction ■ FT-Raman System / FT-Raman Spectrometer ■ HTS-Raman Accessories ■ Discriminant Analysis ■ Quantitative Analysis ■ Conclusion *For more details, please refer to the PDF document or feel free to contact us.

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Technical Data: Microplastic Analysis Solution

Technical Data: Microplastic Analysis Solution

Providing a new analysis method based on high-speed imaging and machine learning!

Bruker Japan can provide spectroscopic analysis solutions specialized in microplastics due to many years of experience. Our FT-IR and Raman microscopes are used daily by leading microplastic scientists around the world. This document clearly explains: ▶ The effectiveness of micro-infrared and Raman spectroscopy ▶ Why Bruker products are suitable for microplastic analysis *For more details, please refer to the PDF document or feel free to contact us. ◆Exhibiting at JASIS2023◆ Please check the basic information below for details about the exhibition.

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