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microscope Product List and Ranking from 178 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Nov 26, 2025～Dec 23, 2025
This ranking is based on the number of page views on our site.

microscope Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Nov 26, 2025～Dec 23, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. スリーアールソリューション Fukuoka//Trading company/Wholesale
  3. サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
  4. 4 アズサイエンス 松本本社 Nagano//Trading company/Wholesale
  5. 5 アイテス Shiga//Electronic Components and Semiconductors
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microscope Product ranking

Last Updated： Aggregation Period:Nov 26, 2025～Dec 23, 2025
This ranking is based on the number of page views on our site.

  1. Portable Microscope "Magic Loupe R" / 15x Magnification, Photo and Save Capability スリーアールソリューション
  2. White interference microscope equipped with laser 'VK-X4000 series'
  3. White interference microscope equipped with laser microscope 'VK-X3000'
  4. 4 All-in-one fluorescence microscope 'BZ-X1000 Series'
  5. 5 All-in-one fluorescence microscope 'BZ-X800'

microscope Product List

421～435 item / All 663 items

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[Analysis Case] Visualization of Strain at Heterojunction Interfaces in Compounds

[Analysis Case] Visualization of Strain at Heterojunction Interfaces in Compounds

Lattice image analysis using the FFTM method

The Fast Fourier Transform Mapping method is a technique that performs a Fourier transform on high-resolution TEM images to analyze and visualize the minute lattice distortions of crystals from the spot positions of the FFT pattern. Through FFTM analysis, it is possible to (1) analyze lattice distortions in the x and y directions of the image, (2) analyze lattice distortions in the crystal plane direction, (3) analyze the distribution of crystal plane spacing and crystal plane orientation, (4) display the data distribution as a histogram, and (5) detect distortions of 0.5% with a spatial resolution of 5 nm. An example of its application to compound heterojunction multilayer film samples is presented.

  • InGaP_GaAs多層膜の高分解能TEM像.png
  • FFTサイズの設定.png
  • FFTパターン.png
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[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

Identification of failure locations using an emission microscope with a high voltage power supply.

By overlaying the luminescent image and the IR image, it is possible to identify leak locations under microscopic observation. If there are large-scale appearance anomalies such as cracks or electrostatic breakdown, abnormalities can also be confirmed with an IR microscope. Additionally, if luminescence cannot be detected due to light shielding of the emitter electrode, the collector electrode is removed, and near-infrared light is detected from the collector side. An example is presented where a high-voltage power supply capable of applying up to 2000V is used to operate a power device with high voltage resistance and low leakage current, and the failure location is identified using an emission microscope.

  • Contract Analysis

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[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film

[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film

Electron beam induced current method and crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are expected to be low-cost next-generation solar cells. Development is underway for large-area and high-quality production. To evaluate the characteristics of the polycrystalline thin film, we conducted assessments of the pn junction using EBIC and crystal grain evaluation using EBSD on the same cross-section. We prepared a cross-section of the CIGS film and measured the open-circuit voltage (EBIC) by scanning an electron beam, visualizing the in-plane distribution of the open-circuit voltage. Additionally, by measuring EBSD on the same surface, we correlated the distribution of the open-circuit voltage with the crystal grains.

  • SEM.png
  • EBIC.png
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[Analysis Case] Evaluation of Crystal Grains in CIGS Film

[Analysis Case] Evaluation of Crystal Grains in CIGS Film

Crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are being developed as next-generation solar cells expected to achieve low cost, large area, and high quality, and crystal information is required in this process. The EBSD method allows for the evaluation of crystal grains in CIGS films. The crystal information obtained from the EBSD method mainly includes orientation and grain size.

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[Analysis Case] Structural Observation of the Hall Side Wall ONO Film

[Analysis Case] Structural Observation of the Hall Side Wall ONO Film

Planar TEM observation of specific areas using the FIB method.

By using FIB technology that allows for processing at the nanoscale, it is possible to perform planar TEM observations of specific areas. This enables the confirmation of the ONO three-layer structure (silicon oxide film / silicon nitride film / silicon oxide film) of the capacitor insulating film on the sidewall of the hole, which is difficult to verify through cross-sectional observations.

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Spherical aberration correction function

Spherical aberration correction function

TEM: Transmission Electron Microscopy

In a STEM device equipped with a spherical aberration correction function (Cs corrector), high-resolution observation and high-sensitivity analysis at the atomic level are possible. The resolution is approximately 0.10 nm.

  • Contract Analysis

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[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid

[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid

Observation of cross-sectional structure of liquid samples using cryo-SEM.

When evaluating the particle size and structure of fine particles dispersed in a liquid, conventional methods involved drying the liquid to extract the fine particles as a powder, which were then measured using an electron microscope. However, this method was not suitable for investigating how fine particles are actually dispersed in the liquid used. Therefore, we will introduce a case where cryo-processing and SEM observation were performed to directly evaluate how fine particles are dispersed within a liquid sample.

  • Contract Analysis

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[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS

[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS

Capable of nano-order morphological observation and elemental analysis.

Transmission electron microscopy (TEM) allows for morphological observation and elemental analysis on the order of μm to nm. Since eyeshadows are aggregates of solid particles, we conducted the analysis directly using TEM. After TEM observation, we performed EDX analysis on specific areas within the field of view to estimate the materials based on the constituent elements. Furthermore, it is possible to distinguish crystal types through EELS analysis.

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[Analysis Case] Structural Evaluation of Fine Transistors

[Analysis Case] Structural Evaluation of Fine Transistors

High-resolution TEM observation using Cs-corrected TEM

By using a Cs-corrected TEM device that compensates for spherical aberration, it is possible to observe the cross-sectional structure of devices with high resolution. This case presents data from high-resolution (HR)-TEM observation and EDX elemental distribution analysis of commercially available MPU transistor components. Even for fine multilayer structures like FinFETs, it is possible to clearly observe the structure and elemental distribution of the devices using a Cs-corrected TEM.

  • Contract Analysis

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[Analysis Case] Morphological Observation and Component Analysis of Solid Polymer Fuel Cell Catalyst Materials

[Analysis Case] Morphological Observation and Component Analysis of Solid Polymer Fuel Cell Catalyst Materials

Evaluation of catalyst particles using SEM, STEM, and EDX.

The electrodes of fuel cells are supported by Pt particles or Pt alloy (such as PtRu) particles on carbon. Due to the fine structure of these catalyst particles, which are on the order of a few nanometers, SEM and TEM analyses are used for morphological observation and compositional analysis. In addition to evaluations in the initial state, degradation after current application has been reported, including modulation of alloy composition, Ru leaching, and an increase in catalyst particle size; high spatial resolution HAADF observation and EDX analysis are very effective for these evaluations. Furthermore, SEM observation allows for the confirmation of the shape of the carbon support and the state of the catalyst particles.

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[Analysis Case] Observation of Hair Surface Microstructure by AFM

[Analysis Case] Observation of Hair Surface Microstructure by AFM

Quantitative evaluation with reduced alteration is possible through analysis in the atmosphere.

This case study introduces an analysis of the condition of the cuticle on the hair surface using AFM. AFM is a method for three-dimensional measurement of nanoscale surface roughness. Since the analysis is conducted in the atmosphere, it does not cause degradation or gas release of organic materials, allowing for an evaluation of the sample's original shape. In this case study, we assessed the degree of cuticle opening, the distribution of adhered substances, and the roughness evaluation of different areas through images, as well as quantitatively evaluated the surface roughness through numerical processing. This method is effective for evaluating the condition of hair after shampooing and the application state after applying styling products.

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[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM

[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM

High-resolution TEM observation of crystal defects detected by PL mapping.

In PL (photoluminescence) mapping, it is possible to identify the positions of crystal defects from the luminescent areas. Furthermore, by performing high-resolution STEM observation (HAADF-STEM images) at the same locations, we can capture stacking defects. In this case study, we investigated commercially available SiC power devices using PL mapping and STEM. After identifying the positions of stacking defects through PL mapping, we conducted μ-sampling at the defect edge and performed cross-sectional STEM observation.

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[Analysis Case] Evaluation of Diffusion Layer Shape of Image Sensors Using SCM

[Analysis Case] Evaluation of Diffusion Layer Shape of Image Sensors Using SCM

We provide consistent support from sample disassembly to measurement.

This document presents case studies evaluating the diffusion layer of image sensors in smartphones. Using a scanning capacitance microscope (SCM) capable of determining the p/n type of semiconductors, we assessed the distribution of the diffusion layer. By combining the results from cross-sectional and planar SCM, we obtained complementary and extensive information. SCM is one of the effective tools for evaluating the quality of image sensor diffusion layers and for failure analysis.

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  • lens

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AFM Data Collection

AFM Data Collection

AFM: Atomic Force Microscopy Method

AFM is a method that scans the surface of a sample with a fine probe and measures nano-scale surface topography in three dimensions. It can measure a wide range of materials, not only for the evaluation of metals, semiconductors, and oxides, but also for soft materials such as hair and contact lenses. This document presents various AFM images of different materials.

  • Contract Analysis
  • Wafer

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[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls

[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls

Quantitative evaluation of the roughness of trench sidewalls related to device characteristics.

In recent years, SiC has been attracting attention as a material for high-voltage devices. The trench MOSFET structure is necessary for the high integration of devices, and the application development for SiC devices is progressing. Since the channel region of the trench MOSFET structure is the trench sidewall, the flatness of the trench sidewall is related to the reliability of the device. This document introduces an example of quantitatively evaluating the roughness of the trench sidewall of SiC trench MOSFETs using AFM (Atomic Force Microscopy).

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  • Other semiconductors

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