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microscope Product List and Ranking from 41 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

microscope Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. フローベル Kanagawa//Optical Instruments
  3. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  4. 4 アズサイエンス 松本本社 Nagano//Trading company/Wholesale
  5. 5 サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
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microscope Product ranking

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. White interference microscope equipped with laser microscope 'VK-X3000'
  2. All-in-one fluorescence microscope 'BZ-X1000 Series'
  3. Bilateral Microscope System "TOMOS Series" フローベル
  4. 4 All-in-one fluorescence microscope 'BZ-X800'
  5. 5 All-in-one fluorescence microscope BZ-X series

microscope Product List

406～420 item / All 654 items

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Scanning Electron Microscopy (SEM)

Scanning Electron Microscopy (SEM)

High magnification observation (up to about 300,000 times) is possible.

SEM is a technique that allows for obtaining contrast based on the information from electrons emitted from a sample when an electron beam is directed at it, revealing the sample's surface roughness and compositional differences. - High magnification observation (up to about 500,000 times) is possible with simple operation. - Observation of secondary electron (SE) images, backscattered electron (BSE) images, and transmitted electron (TE) images is possible. - Observation can be conducted within an acceleration voltage range of 0.1 to 30 kV. - Samples up to 6 inches can be loaded into the device (depending on the equipment). - By combining options with SEM, various types of information can be obtained: - Elemental analysis using an EDX detector is possible. - Measurement of electron beam induced current (EBIC) allows for evaluation of the junction position and shape in semiconductors. - Crystal information can be obtained using electron backscatter diffraction (EBSD) method. - Three-dimensional structural information can be acquired through repeated FIB processing and SEM observation (Slice & View). - Cooling observation and atmosphere-controlled observation are available.

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Atomic Force Microscopy (AFM) method

Atomic Force Microscopy (AFM) method

Three-dimensional measurement of nanoscale surface roughness.

AFM is a method that scans the surface of a sample with a fine probe and measures nanoscale surface topography in three dimensions. - It can measure a wide range of samples, from insulators to soft organic materials, including metals, semiconductors, and oxides. - By using tapping mode with low contact pressure, it is possible to minimize sample damage.

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[SSRM] Scanning Spreading Resistance Microscopy

[SSRM] Scanning Spreading Resistance Microscopy

Local resistance measurement at the nanometer level is possible.

SSRM is a method that visualizes the spreading resistance directly beneath the probe by scanning the surface of a sample with applied bias using a conductive probe and measuring the distribution of resistance values in two dimensions. When measuring silicon semiconductor devices, it is sensitive to carrier concentrations of 10^16 cm^-3 or higher, depending on spatial resolution. - Local resistance measurement at the nanometer level is possible - Effective for measuring the dopant concentration distribution in semiconductors - Cannot determine the polarity of semiconductors (p-type/n-type) - Quantitative evaluation is not possible

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[Analysis Case] Observation of the Buffer Layer Interface in CIGS Thin-Film Solar Cells

[Analysis Case] Observation of the Buffer Layer Interface in CIGS Thin-Film Solar Cells

Crystal structure evaluation of the Zn(S, O, OH)/CIGS junction interface using ultra-high resolution STEM.

By directly observing the junction interface using a Cs collector-equipped STEM device, it is possible to evaluate the crystal structure at the atomic level. In this study, we conducted HAADF-STEM imaging of the buffer layer/CIGS interface using Zn(S, O, OH) in the buffer layer of CIGS thin-film solar cells and evaluated the structure. As a result, it was suggested that the crystal structure at the junction is unclear compared to samples using CdS as the buffer layer, indicating that it is not an epitaxial junction.

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[Analysis Case] Visualization of Strain at Heterojunction Interfaces in Compounds

[Analysis Case] Visualization of Strain at Heterojunction Interfaces in Compounds

Lattice image analysis using the FFTM method

The Fast Fourier Transform Mapping method is a technique that performs a Fourier transform on high-resolution TEM images to analyze and visualize the minute lattice distortions of crystals from the spot positions of the FFT pattern. Through FFTM analysis, it is possible to (1) analyze lattice distortions in the x and y directions of the image, (2) analyze lattice distortions in the crystal plane direction, (3) analyze the distribution of crystal plane spacing and crystal plane orientation, (4) display the data distribution as a histogram, and (5) detect distortions of 0.5% with a spatial resolution of 5 nm. An example of its application to compound heterojunction multilayer film samples is presented.

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[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film

[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film

Electron beam induced current method and crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are expected to be low-cost next-generation solar cells. Development is underway for large-area and high-quality production. To evaluate the characteristics of the polycrystalline thin film, we conducted assessments of the pn junction using EBIC and crystal grain evaluation using EBSD on the same cross-section. We prepared a cross-section of the CIGS film and measured the open-circuit voltage (EBIC) by scanning an electron beam, visualizing the in-plane distribution of the open-circuit voltage. Additionally, by measuring EBSD on the same surface, we correlated the distribution of the open-circuit voltage with the crystal grains.

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[Analysis Case] Evaluation of Crystal Grains in CIGS Film

[Analysis Case] Evaluation of Crystal Grains in CIGS Film

Crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are being developed as next-generation solar cells expected to achieve low cost, large area, and high quality, and crystal information is required in this process. The EBSD method allows for the evaluation of crystal grains in CIGS films. The crystal information obtained from the EBSD method mainly includes orientation and grain size.

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[Analysis Case] Structural Observation of the Hall Side Wall ONO Film

[Analysis Case] Structural Observation of the Hall Side Wall ONO Film

Planar TEM observation of specific areas using the FIB method.

By using FIB technology that allows for processing at the nanoscale, it is possible to perform planar TEM observations of specific areas. This enables the confirmation of the ONO three-layer structure (silicon oxide film / silicon nitride film / silicon oxide film) of the capacitor insulating film on the sidewall of the hole, which is difficult to verify through cross-sectional observations.

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Spherical aberration correction function

Spherical aberration correction function

TEM: Transmission Electron Microscopy

In a STEM device equipped with a spherical aberration correction function (Cs corrector), high-resolution observation and high-sensitivity analysis at the atomic level are possible. The resolution is approximately 0.10 nm.

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[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid

[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid

Observation of cross-sectional structure of liquid samples using cryo-SEM.

When evaluating the particle size and structure of fine particles dispersed in a liquid, conventional methods involved drying the liquid to extract the fine particles as a powder, which were then measured using an electron microscope. However, this method was not suitable for investigating how fine particles are actually dispersed in the liquid used. Therefore, we will introduce a case where cryo-processing and SEM observation were performed to directly evaluate how fine particles are dispersed within a liquid sample.

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[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS

[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS

Capable of nano-order morphological observation and elemental analysis.

Transmission electron microscopy (TEM) allows for morphological observation and elemental analysis on the order of μm to nm. Since eyeshadows are aggregates of solid particles, we conducted the analysis directly using TEM. After TEM observation, we performed EDX analysis on specific areas within the field of view to estimate the materials based on the constituent elements. Furthermore, it is possible to distinguish crystal types through EELS analysis.

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[Analysis Case] Structural Evaluation of Fine Transistors

[Analysis Case] Structural Evaluation of Fine Transistors

High-resolution TEM observation using Cs-corrected TEM

By using a Cs-corrected TEM device that compensates for spherical aberration, it is possible to observe the cross-sectional structure of devices with high resolution. This case presents data from high-resolution (HR)-TEM observation and EDX elemental distribution analysis of commercially available MPU transistor components. Even for fine multilayer structures like FinFETs, it is possible to clearly observe the structure and elemental distribution of the devices using a Cs-corrected TEM.

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