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1～11 件を表示 ／ 全 11 件
SUN UP Diamond Bit Set for Pen Router 30PC No.130
Set of 30 high-quality advanced parts 【Features】 ■ Suitable for processing such as engraving, silver accessories, glass engraving, plastic models, and name engraving ■ Usable tools: electric mini router, battery-operated mini router, flexible shaft ■ Bit size: total length 45mm × shaft diameter 2.35mm Item number: 28303 *For more details, please feel free to contact us.
Low-power non-volatile memory that enables the miniaturization and thinness of wearable devices.
The MB85RS1MT is a compact size of 3.09 x 2.28 x 0.33mm. When comparing the implementation area of both, the WL-CSP corresponds to about 23% of the SOP, allowing for a reduction of approximately 77% in implementation area. Furthermore, this compact package achieves a thickness of 0.33mm, which is about half that of a credit card, enabling a volume reduction of about 95% compared to SOP in terms of implementation volume. By introducing this FeRAM into wearable devices that frequently record real-time log data, it is possible to extend or miniaturize battery life. ■ Main Specifications - Product Name: MB85RS1MT - Memory Capacity (Configuration): 1M bits (128K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Supply Voltage: 1.8V to 3.6V - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (+85°C) - Package: 8-pin WL-CSP, 8-pin SOP
Non-volatile memory that can replace SRAM, enabling battery-less solutions for industrial machinery and business equipment.
This product is a non-volatile memory that retains data even when the power is turned off. It is offered in a 44-pin TSOP package compatible with general-purpose SRAM, allowing for the replacement of SRAM with this FeRAM in industrial machinery, business equipment, and medical devices without significantly altering the design of the circuit board. This eliminates the need for a battery for data retention, contributing to a reduction in the mounting area of the final product's circuit board, power savings, and overall cost reduction. ■ Main Specifications - Capacity (Configuration): 4M bits (256K × 16 bits) - Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles (10^13 cycles) - Data Retention Characteristics: 10 years (+85℃) - Access Time Address Access Time: 150ns (Min) /CE Access Time: 75ns (Max) - Operating Current Operating Supply Current: 20mA (Max) Standby Current: 150µA (Max) Sleep Current: 20µA (Max) - Package: 44-pin TSOP
4M-bit FeRAM 'MB85RQ4ML' that contributes to the performance improvement of network devices with high-speed operation.
This product operates on a single power supply of 1.8V and features a quad SPI interface with four input/output pins, achieving a data transfer speed of 54MB per second. This high-speed operation and the characteristics of non-volatile memory make it ideal for use in networking, RAID controllers, and industrial computing fields. ■ Main Specifications - Product Name: MB85RQ4ML - Memory Capacity (Configuration): 4M bits (512K x 8 bits) - Interface: SPI / Quad SPI - Operating Power Supply Voltage: 1.7V to 1.95V (single supply) - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (+85°C) - Package: 16-pin SOP
4M-bit FeRAM "MB85RS4MT" suitable for real-time data rewriting such as location information from a drive recorder.
This product is a memory developed in response to the demands from customers using existing EEPROMs due to changes in the environment, such as the expansion of edge computing and the increase in the amount of sensor data. Customers have expressed the desire to "increase the number of rewrite cycles," "reduce rewrite time," and "increase memory capacity." This product is well-suited for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices. ■ Main Specifications - Product Name: MB85RS4MT - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 40MHz - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Guarantee Cycles: 10 trillion cycles - Package: 8-pin SOP
Ideal for debugging and troubleshooting high-power three-phase power electronics.
The Teledyne LeCroy "HDO8000 Series" is a high-resolution oscilloscope that surpasses other mid-range oscilloscopes in terms of channel count, resolution, bandwidth, and memory length. With digital logic (MSO), low-speed serial data trigger/decode and analysis toolsets, and a rich array of probes and application packages, it provides a perfect solution. The adoption of the unique Q-Scape multi-tab display allows for intuitive analysis even in multi-channel measurements of three-phase systems. 【Key Features and Specifications】 ■ 8 analog channels ■ 12-bit ADC resolution → Up to 15 bits when using Enhanced Resolution (ERES) ■ Bandwidth: 350MHz, 500MHz, 1GHz ■ Long memory: up to 250M points/channel For more details, please contact us or download the catalog.
![[Technical Information] 256-bit AES](https://image.mono.ipros.com/public/product/image/98a/2000443952/IPROS66938680861330114453.jpeg?w=280&h=280)
Achieving complete data security even in harsh environments.
For more details, please refer to the PDF document or feel free to contact us. The "Advanced Encryption Standard (AES)" is an encryption method used to protect confidential data on storage devices. AES encryption makes forced decryption impossible through complex configurations. The encryption key is generated randomly and is not disclosed to either the user or the manufacturer. The key can be destroyed in less than one second. Additionally, all processing is performed by the SSD hardware, so there is no impact on system speed during data encryption and decryption. <Features> ■ Approval for complete data security only ■ Untraceable high-speed encryption ■ Achieves simple management
Non-volatile memory suitable for advanced automotive markets such as ADAS.
The MB85RS2MLY guarantees 10 trillion data rewrites in a temperature range of -40°C to +125°C. This characteristic is suitable for applications that require real-time data recording. For example, it is possible to record data every 0.1 seconds for 10 years (over 3 billion times). Additionally, the reliability testing of this product complies with AEC-Q100 Grade 1, a high-quality standard known as automotive grade. Therefore, from both the perspective of data write cycles and reliability, this product is well-suited for applications that continuously detect and record the state of vehicles, such as ADAS. ■ Main Specifications - Product Name: MB85RS2MLY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Supply Voltage: 1.7V to 1.95V - Operating Temperature Range: -40°C to +125°C - Write/Read Guarantee Cycles: 10 trillion (10^13 times) - Package: 8-pin SOP, 8-pin DFN - Quality Standard: AEC-Q100 Grade 1 compliant
1M-bit FeRAM 'MB85RC1MT' is optimal as memory for FA control devices, measurement meters, and industrial machinery.
The "MB85RC1MT," our largest memory capacity FeRAM with an I2C interface, has a capacity of 1 megabit and guarantees 10 trillion write cycles, making it an ideal product for FA control devices, measurement meters, and industrial machinery that require frequent rewrites such as real-time logging. We offer a wide range of FeRAM products with both I2C and SPI serial interfaces, allowing us to provide the optimal non-volatile memory products to meet our customers' needs. ■ Features This product is the 1 megabit (128K words x 8 bits) FeRAM "MB85RC1MT" with an I2C interface. It operates at a low voltage of 1.8V to 3.3V within a temperature range of -40°C to +85°C. In addition to a standard operating frequency of 1MHz, comparable to EEPROM, it supports a high-speed mode for reading and writing at 3.4MHz. The guaranteed rewrite cycle count far exceeds that of general-purpose EEPROM, reaching 10 trillion cycles, thus strongly supporting frequent data rewrites such as real-time logging in I2C products.
