Cu etching compatible high-density plasma etching device
Equipped with a new plasma source HCD (hollow cathode discharge) electrode, capable of etching various metals and Cu thin films. A new type of etching device that also facilitates large-area processing.
Equipped with a newly developed plasma source HCd (hollow cathode discharge) type electrode. Achieves a plasma density that is an order of magnitude higher than conventional electrodes with a simple k structure that is free of magnetic fields and antennas. Supports etching of not only various metals but also difficult-to-etch materials such as Cu thin films with uniquely developed high-density plasma and proprietary processes. The newly developed HCD type head allows for easy scale-up and enables high-precision etching of rectangular substrates and large substrates. Supports metal etching of 300 mm wafers, stacked substrates, and substrates up to 1 m². A new type of etching device that covers semiconductor peripheral materials (photo masks, high-density mounting substrates) that have seen increasing demand in recent years, breaking away from conventional plasma etching methods.
- Company：神港精機 東京支店
- Price：Other
