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Power Transistor Product List and Ranking from 12 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

Power Transistor Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. オーエン Saitama//Electronic Components and Semiconductors
  2. Axuas Co., Ltd. Aichi//Consumer Electronics
  3. null/null
  4. 4 ジェピコ 本社、大阪支店、名古屋支店、練馬支店 Tokyo//Industrial Electrical Equipment
  5. 5 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
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Power Transistor Product ranking

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. Power transistor alternatives and second-source products Axuas Co., Ltd.
  2. 【TOSHIBA：TD62593AFNG(5.EL)】 オーエン
  3. Introduction to EPC Space's GaN-on-Si【Space】 ジェピコ 本社、大阪支店、名古屋支店、練馬支店
  4. 【ROHM：RTR020P02TL】 オーエン
  5. 4 【SANKEN：SI3150E】 オーエン

Power Transistor Product List

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Introduction to EPC Space's GaN-on-Si【Space】

Introduction to EPC Space's GaN-on-Si【Space】

Achieving smaller and lighter circuits for important space missions!

EPCSpace is a joint venture between EPC, a leading company in GaN-on-Si power devices, and VPT, which provides DCDC converters for aerospace applications. It offers Rad Hard GaN-on-Si transistor solutions for satellites and high-reliability applications. It addresses critical environments in space for applications such as power/light detection and ranging (LiDAR), motor drive, and ion thrusters. 【Products】 ■ Rad Hard GaN Packaged Discretes ・https://epc.space/products/gan-discretes/ ■ Rad Hard GaN on Ceramic Adaptor ・https://epc.space/products/rad-hard-gan-die-on-ceramic-adaptor/ ■ Rad Hard GaN Drivers and Power Stages ・https://epc.space/products/drivers-and-power-stages/ *For more details, please refer to the related links or feel free to contact us.

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  • converter

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『LMG5200』

『LMG5200』

Fully integrated 80V GaN half-bridge power module 'LMG5200'

The LMG5200 device incorporates a GaN half-bridge power stage with an 80V, 10A driver and can be used in integrated power stage solutions utilizing enhancement-mode Gallium Nitride (GaN) FETs. This device consists of two 80V GaN FETs driven in a half-bridge configuration by a single high-frequency GaN FET driver. GaN FETs have nearly zero reverse recovery time and very low input capacitance (CISS), providing significant advantages in power conversion. All devices are mounted on a package platform that uses no bond wires, minimizing parasitic elements in the package. The LMG5200 device is supplied in a lead-free package measuring 6mm × 8mm × 2mm, making it easy to mount on PCBs. 【Features】 ■ Low power consumption ■ Ideal for isolated/non-isolated applications ■ Integrates one 80V 10A driver and two 80V 15mΩ GaN FETs ■ Gate driver capable of switching up to 10MHz *For more details, please contact us.

  • Other semiconductors
  • Other power sources

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RF power transistor

RF power transistor

High-power transistors characterized by high output, high gain, and high efficiency with low noise are usable up to 1 GHz.

POINT NINE Co., Ltd. aims to provide the highest quality products in the RF power transistor market. Certified with MIL-Q-9858, MIL-I-45208, and ISO 9001:2000. High power transistors characterized by high output, high gain, and high efficiency with low noise are usable up to 1GHz, making them suitable for communication satellites, ECM transistors, radar radios, and more. 【Product Lineup】 ■ 28V RF MOSFETs ■ 12V RF MOSFETs *For more details, please refer to the PDF materials or feel free to contact us.

  • Transistor

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600V Enhance Mode GaN HEMTs

600V Enhance Mode GaN HEMTs

High-efficiency Gallium Nitride (GaN) HEMT optimal for switching power supplies (SMPS)

Infineon Technologies' "CoolGaN 600V Series" is realized according to a specific certification process specialized for GaN, providing a robust and reliable solution. It is part of Infineon's lineup that maximizes the advantages of GaN, based on SMD packages that deliver high performance. 【Features】 ■ 600V power devices ■ Suitable for hard-switching and soft-switching topologies ■ Optimized for power supply turn-on and turn-off ■ Cutting-edge technology that enables innovative solutions and mass production ■ High efficiency for switching power supplies (SMPS) *For more details, please refer to the PDF document or feel free to contact us.

  • Other electronic parts
  • Other semiconductors

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[Research Report] Automotive Powertrain & Power Transistor

[Research Report] Automotive Powertrain & Power Transistor

Survey Report on the Usage of Si IGBTs and SiC MOSFETs in Japan and Future Trend Predictions

This document is a research report on "On-Board Powertrain & Power Transistors." As efforts to combat global warming and achieve carbon neutrality progress, the electrification of vehicles is advancing, leading to practical applications and increased market competition among companies. High-voltage power devices (IGBT, RC-IGBT, SiC) are highlighted as key components that determine "low loss," "high reliability," and "cost" in relation to electrification. [Overview (Excerpt)] ■ Background ■ Report Structure (Table of Contents) *For more details, please refer to the PDF document or feel free to contact us.*

  • Transistor

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Power transistor 'CGD65B200S2'

Power transistor 'CGD65B200S2'

Achieving compatibility with a wide range of switching frequencies for electronic devices!

The "CGD65B200S2" is an enhancement mode GaN-on-silicon power transistor. Since there is no external component, it can be directly connected if a sense resistor is needed. It is soldered to a wide copper area for improved flatness, thermal performance, and simplified thermal design. It comes in a DFN 5x6 SMD package that supports high frequencies. 【Features】 ■ Easy design ■ High reliability ■ 650V-8.5A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

  • Transistor

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Power transistor "CGD65A130S2"

Power transistor "CGD65A130S2"

ICeGaN gate technology that achieves compatibility! Equipped with gate drivers and controller chips.

The "CGD65A130S2" is an enhancement mode GaN-on-silicon power transistor. By incorporating a current detection function, a separate current detection resistor is unnecessary. Since there is no external component, if a sense resistor is needed, the device can be connected directly. It is soldered to a wide copper area on the ground, which improves flatness, enhances thermal performance, simplifies thermal design, and supports high frequencies in a DFN 8x8 SMD package. 【Features】 ■ Easy design ■ High reliability ■ 650V-12A mode GaN power switch * You can download the English version of the catalog. * For more details, please feel free to contact us.

  • Transistor

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Selling high-power GaN/LDMOS for 5G, WPT, and ISM bands.

Selling high-power GaN/LDMOS for 5G, WPT, and ISM bands.

5G base station uses 450W with integrated GaN HEMT, providing 55W power with 9dB backoff.

Farad has started handling products from Innogration Technologies (China), an ISO9000/ISO14000 certified manufacturer that designs and manufactures HF and high-frequency GaN/LDMOS power transistors. They have numerous achievements in semiconductor manufacturing equipment, industrial microwave amplifiers and generators, and applications such as 4G/5G communications in Japan and around the world. Aiming for high efficiency and high output, they offer a 390W GaN HEMT in the 2.45GHz band and a 100W GaN Doherty module in the 5GHz band, compatible with various packages. *For more details, please download the PDF document or feel free to contact us.

  • Amplifier

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[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)

[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)

You can understand the positional relationship between the gate layer, source layer, and body layer.

We investigated the shape and positional relationship of the poly-Si gate, n-type source layer, and p-type body layer of commercially available power transistors (DMOSFETs). By overlaying AFM images, we can also understand the positional relationship with the gate.

  • Contract Analysis

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[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

It is possible to perform magnified observation and EDX analysis at the gate destruction location identified by Slice & View.

We conducted Slice & View on a SiC transistor where the leak location was identified using a backside emission microscope, and performed magnified observation and SEM-EDX analysis at the confirmed destruction site. Bright contrast was observed in the reflected electron images, indicating the segregation of Si and Ni. It is believed that some segregation of elements such as Si and Ni occurred due to the destruction caused by the leak. Measurement methods: Slice & View, SEM-EDX, EMS Product field: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.

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  • Contract Analysis
  • Contract measurement

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Automotive GaN (Gallium Nitride) power transistor

Automotive GaN (Gallium Nitride) power transistor

This is a high Vth 650V GaN (gallium nitride) power transistor that also meets the AEC-Q101 standard.

We have prepared high Vth, high reliability, and high power GaN (gallium nitride) power transistors for automotive applications.

  • Transistor

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