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1200V rated SiC MOSFET discrete products that achieve high reliability and low loss.
- Insulation-type package with heat dissipation capability (Rth(j-c)=0.22℃・w Typ) - Adopts a 4-pin structure to reduce the influence of source terminal inductance, achieving faster switching and lower loss - Industry-leading low on-resistance (15mΩ Typ Tj=150℃)
Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!
Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.
Achieves low RDS(on) to maximize the effective use of package space.
The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.
