Ion Mass Spectrometer Product List and Ranking from 4 Manufacturers, Suppliers and Companies

[Analysis Case] Evaluation of "Water" in Quartz and Glass Using SIMS

Depth-direction analysis of hydrogen using 'heavy water (D2O) treatment'

We will introduce a case where the permeability of water (H2O) in glass materials was evaluated by measuring the distribution of deuterium (D). When hydrogen (H) is already present, it is difficult to distinguish whether the hydrogen is due to the influence of water. Therefore, treatment with heavy water (D2O) was performed, and the distribution of the stable isotope deuterium was measured in depth using SIMS. By examining the depth distribution of deuterium, it is possible to estimate how deep the water has penetrated.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis

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[Analysis Case] Secondary Battery

Evaluation of the components distributed on the surface of a single particle of powder is possible.

We will introduce a case where a sheet coated with graphite negative electrode particles used in lithium-ion secondary batteries was analyzed using TOF-SIMS. It was confirmed that graphite and PVDF are distributed on the surface of a single powder particle. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a method suitable for qualitative analysis and imaging of organic and inorganic substances on surfaces from the mass spectrum of secondary ions. It is effective for evaluating the distribution of minute foreign substances and stains due to its high resolution. Measurement method: TOF-SIMS Product field: Secondary batteries Analysis purpose: Composition distribution evaluation For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis

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[Analysis Case] Component Analysis of Water Repellent Areas

TOF-SIMS enables wide-area imaging evaluation of multiple components.

To investigate the causes of defects such as poor adhesion, it is important to gain insights into the surfaces of wafers and devices. In this instance, hydrophobic areas were observed on a silicon wafer, prompting wide-area imaging using TOF-SIMS. As a result, components estimated to be silicone oil, CF-based grease, and paraffin oil were identified from the hydrophobic areas. TOF-SIMS typically has a measurement field of view up to 500μm square, but by moving the stage during measurement, it is possible to evaluate wide-area distributions. Measurement method: TOF-SIMS Product fields: Devices, Displays, Electronic Components, Manufacturing Equipment Analysis objectives: Qualitative, Imaging, Composition Distribution Evaluation For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
Contract measurement

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[Case Study] Quality Control through Surface Analysis

The surface adhesion components (such as polydimethylsiloxane) can be evaluated using TOF-SIMS.

TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is a method that can sensitively evaluate organic and inorganic substances on the very surface, and it can be used as an analytical tool for various quality control processes of products. For example, it can be used for regular checks of surface contaminants during product storage, investigating the causes when defects such as peeling or discoloration occur in products, and analyzing changes in key components before and after altering manufacturing conditions. This document presents an example of comparing the surfaces of silicon wafers stored under different environments, focusing on the representative contaminant polydimethylsiloxane (PDMS). Measurement method: TOF-SIMS Product fields: Electronic components, manufacturing equipment, parts, and others (general electronics) Analysis purposes: Surface analysis, evaluation of chemical bonding states, failure analysis, defect analysis, and others (contamination assessment, quality control) For more details, please download the document or contact us.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
Contract measurement

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SSDP-SIM

SSDP： Substrate Side Depth Profile

In secondary ion mass spectrometry (SIMS), due to phenomena such as surface roughness, the knock-on effect where atoms present on the surface are pushed inward by ion irradiation, and crater bottom roughness, it may not be possible to obtain sharp elemental distributions. To address this issue, the SSDP method (Back-Side SIMS) involves performing SIMS analysis from the substrate side (the back side) after thinning the sample. This technique allows for a more accurate evaluation of elemental distribution without being affected by the sample shape or measurement conditions.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Contract Analysis
Contract measurement

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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.

Impurities from components of the film formation device, target materials, and plating solutions can contaminate the device and have adverse effects, making the qualitative assessment of impurities on surfaces, within films, and at interfaces important. TOF-SIMS can sensitively evaluate unknown elements present on surfaces, within films, and at interfaces in a single measurement due to the following three characteristics: 1. For metallic elements, ions from m/z 1 to 800 can be detected simultaneously in one measurement. 2. Detection sensitivity of a few ppm can be achieved (varies depending on materials and ions). 3. The use of a sputter gun allows for the evaluation of depth distribution.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

Wafer
Contract measurement
Other semiconductors

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Impurity analysis of GaN gate oxide film

Successfully captured impurity diffusion from the upper side of the gate oxide film using D-SIMS!

In GaN devices, the diffusion of components (impurities) originating from the pre-process of the gate oxide film leads to insulation failures, making it necessary to identify their concentration distribution and diffusion sources. We have developed a technology that provides high flatness to the surface of thin-film processed GaN compounds. As a result, we successfully captured the diffusion of impurities from the upper side of the gate oxide film using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.

Company：東芝ナノアナリシス
Price：Other

Other analysis and evaluation services

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Nitrogen concentration analysis of SiC n-buffer layer

Successfully captured the n-buffer layer thickness and nitrogen (N) concentration using D-SIMS!

In recent years, in SiC MOSFETs, an n-buffer layer on the order of several hundred nanometers has been inserted between the n-substrate and the n-drift layer to address on-resistance issues. In the evaluation of the n-buffer layer, it is necessary to thin the n-drift layer, which is positioned above and is on the order of several micrometers, to improve depth direction resolution and to flatten its surface. We have developed a technology that provides high flatness to the surface of SiC compounds processed as thin films. As a result, we successfully captured the thickness and nitrogen (N) concentration of the n-buffer layer using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, please feel free to contact us.

Company：東芝ナノアナリシス
Price：Other

Other analysis and evaluation services

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