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Ion Mass Spectrometer Product List and Ranking from 5 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Apr 15, 2026～May 12, 2026
This ranking is based on the number of page views on our site.

Ion Mass Spectrometer Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Apr 15, 2026～May 12, 2026
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  2. アイテス Shiga//Electronic Components and Semiconductors
  3. 東芝ナノアナリシス Kanagawa//Testing, Analysis and Measurement
  4. 4 イオンテクノセンター Osaka//Testing, Analysis and Measurement
  5. 5 トヤマ Kanagawa//Testing, Analysis and Measurement
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Ion Mass Spectrometer Product ranking

Last Updated： Aggregation Period:Apr 15, 2026～May 12, 2026
This ranking is based on the number of page views on our site.

  1. [TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry 一般財団法人材料科学技術振興財団　MST
  2. Dynamic SIMS アイテス
  3. SSDP-SIM 一般財団法人材料科学技術振興財団　MST
  4. 4 [Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate 一般財団法人材料科学技術振興財団　MST
  5. 5 [Analysis Case] Investigation of Causes of Peeling in Plating and Coating 一般財団法人材料科学技術振興財団　MST

Ion Mass Spectrometer Product List

31～41 item / All 41 items

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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.

  • Contract Analysis
  • Ion Mass Spectrometer

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

  • Contract Analysis
  • Ion Mass Spectrometer

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[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

IGZO films are materials that are being researched and developed as TFT materials for displays. There are concerns that the diffusion of metal elements into the IGZO film may degrade the TFT characteristics, so it is necessary to accurately measure the metal concentration within the film for evaluating the device characteristics and reliability using IGZO films. We will introduce a case where the Ti concentration in the IGZO film was evaluated from the opposite side of the metal electrode using SSDP-SIMS.

  • Contract Analysis
  • Contract Inspection
  • Ion Mass Spectrometer

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[Analysis Case] Evaluation of "Water" in Quartz and Glass Using SIMS

[Analysis Case] Evaluation of "Water" in Quartz and Glass Using SIMS

Depth-direction analysis of hydrogen using 'heavy water (D2O) treatment'

We will introduce a case where the permeability of water (H2O) in glass materials was evaluated by measuring the distribution of deuterium (D). When hydrogen (H) is already present, it is difficult to distinguish whether the hydrogen is due to the influence of water. Therefore, treatment with heavy water (D2O) was performed, and the distribution of the stable isotope deuterium was measured in depth using SIMS. By examining the depth distribution of deuterium, it is possible to estimate how deep the water has penetrated.

  • Contract Analysis
  • Ion Mass Spectrometer

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[Analysis Case] Secondary Battery

[Analysis Case] Secondary Battery

Evaluation of the components distributed on the surface of a single particle of powder is possible.

We will introduce a case where a sheet coated with graphite negative electrode particles used in lithium-ion secondary batteries was analyzed using TOF-SIMS. It was confirmed that graphite and PVDF are distributed on the surface of a single powder particle. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a method suitable for qualitative analysis and imaging of organic and inorganic substances on surfaces from the mass spectrum of secondary ions. It is effective for evaluating the distribution of minute foreign substances and stains due to its high resolution. Measurement method: TOF-SIMS Product field: Secondary batteries Analysis purpose: Composition distribution evaluation For more details, please download the materials or contact us.

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  • Contract Analysis
  • Ion Mass Spectrometer

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[Analysis Case] Component Analysis of Water Repellent Areas

[Analysis Case] Component Analysis of Water Repellent Areas

TOF-SIMS enables wide-area imaging evaluation of multiple components.

To investigate the causes of defects such as poor adhesion, it is important to gain insights into the surfaces of wafers and devices. In this instance, hydrophobic areas were observed on a silicon wafer, prompting wide-area imaging using TOF-SIMS. As a result, components estimated to be silicone oil, CF-based grease, and paraffin oil were identified from the hydrophobic areas. TOF-SIMS typically has a measurement field of view up to 500μm square, but by moving the stage during measurement, it is possible to evaluate wide-area distributions. Measurement method: TOF-SIMS Product fields: Devices, Displays, Electronic Components, Manufacturing Equipment Analysis objectives: Qualitative, Imaging, Composition Distribution Evaluation For more details, please download the materials or contact us.

  • Contract Analysis
  • Contract measurement
  • Ion Mass Spectrometer

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[Case Study] Quality Control through Surface Analysis

[Case Study] Quality Control through Surface Analysis

The surface adhesion components (such as polydimethylsiloxane) can be evaluated using TOF-SIMS.

TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is a method that can sensitively evaluate organic and inorganic substances on the very surface, and it can be used as an analytical tool for various quality control processes of products. For example, it can be used for regular checks of surface contaminants during product storage, investigating the causes when defects such as peeling or discoloration occur in products, and analyzing changes in key components before and after altering manufacturing conditions. This document presents an example of comparing the surfaces of silicon wafers stored under different environments, focusing on the representative contaminant polydimethylsiloxane (PDMS). Measurement method: TOF-SIMS Product fields: Electronic components, manufacturing equipment, parts, and others (general electronics) Analysis purposes: Surface analysis, evaluation of chemical bonding states, failure analysis, defect analysis, and others (contamination assessment, quality control) For more details, please download the document or contact us.

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  • Contract Analysis
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  • Ion Mass Spectrometer

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SSDP-SIM

SSDP-SIM

SSDP： Substrate Side Depth Profile

In secondary ion mass spectrometry (SIMS), due to phenomena such as surface roughness, the knock-on effect where atoms present on the surface are pushed inward by ion irradiation, and crater bottom roughness, it may not be possible to obtain sharp elemental distributions. To address this issue, the SSDP method (Back-Side SIMS) involves performing SIMS analysis from the substrate side (the back side) after thinning the sample. This technique allows for a more accurate evaluation of elemental distribution without being affected by the sample shape or measurement conditions.

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  • Contract Analysis
  • Contract measurement
  • Ion Mass Spectrometer

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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.

Impurities from components of the film formation device, target materials, and plating solutions can contaminate the device and have adverse effects, making the qualitative assessment of impurities on surfaces, within films, and at interfaces important. TOF-SIMS can sensitively evaluate unknown elements present on surfaces, within films, and at interfaces in a single measurement due to the following three characteristics: 1. For metallic elements, ions from m/z 1 to 800 can be detected simultaneously in one measurement. 2. Detection sensitivity of a few ppm can be achieved (varies depending on materials and ions). 3. The use of a sputter gun allows for the evaluation of depth distribution.

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  • Wafer
  • Contract measurement
  • Other semiconductors
  • Ion Mass Spectrometer

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Impurity analysis of GaN gate oxide film

Impurity analysis of GaN gate oxide film

Successfully captured impurity diffusion from the upper side of the gate oxide film using D-SIMS!

In GaN devices, the diffusion of components (impurities) originating from the pre-process of the gate oxide film leads to insulation failures, making it necessary to identify their concentration distribution and diffusion sources. We have developed a technology that provides high flatness to the surface of thin-film processed GaN compounds. As a result, we successfully captured the diffusion of impurities from the upper side of the gate oxide film using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.

  • Other analysis and evaluation services
  • Ion Mass Spectrometer

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Nitrogen concentration analysis of SiC n-buffer layer

Nitrogen concentration analysis of SiC n-buffer layer

Successfully captured the n-buffer layer thickness and nitrogen (N) concentration using D-SIMS!

In recent years, in SiC MOSFETs, an n-buffer layer on the order of several hundred nanometers has been inserted between the n-substrate and the n-drift layer to address on-resistance issues. In the evaluation of the n-buffer layer, it is necessary to thin the n-drift layer, which is positioned above and is on the order of several micrometers, to improve depth direction resolution and to flatten its surface. We have developed a technology that provides high flatness to the surface of SiC compounds processed as thin films. As a result, we successfully captured the thickness and nitrogen (N) concentration of the n-buffer layer using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, please feel free to contact us.

  • Other analysis and evaluation services
  • Ion Mass Spectrometer

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