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Ion Mass Spectrometer Product List and Ranking from 5 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Jul 22, 2026～Aug 18, 2026
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Ion Mass Spectrometer Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Jul 22, 2026～Aug 18, 2026
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  2. アイテス Shiga//Electronic Components and Semiconductors
  3. 東芝ナノアナリシス Kanagawa//Testing, Analysis and Measurement
  4. 4 イオンテクノセンター Osaka//Testing, Analysis and Measurement
  5. 5 トヤマ Kanagawa//Testing, Analysis and Measurement
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Ion Mass Spectrometer Product ranking

Last Updated： Aggregation Period:Jul 22, 2026～Aug 18, 2026
This ranking is based on the number of page views on our site.

  1. [Case Study] Quality Control through Surface Analysis 一般財団法人材料科学技術振興財団　MST
  2. [Analysis Case] Investigation of Watermark Causes 一般財団法人材料科学技術振興財団　MST
  3. Dynamic SIMS アイテス
  4. 4 [Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate 一般財団法人材料科学技術振興財団　MST
  5. 4 Regarding interface and depth direction resolution 一般財団法人材料科学技術振興財団　MST

Ion Mass Spectrometer Product List

31～48 item / All 48 items

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[Analysis Case] Depth Direction Analysis of TFT Wiring Intersection Using SSDP-SIMS

[Analysis Case] Depth Direction Analysis of TFT Wiring Intersection Using SSDP-SIMS

Analysis using SSDP is also possible for microdomains and glass substrates.

An example is shown where secondary ion mass spectrometry (SIMS) was used to analyze the intersection (4μm×10μm) of the data signal wiring and gate electrode wiring of a commercially available TFT LCD from the substrate side (SSDP-SIMS). By measuring from the substrate side (SSDP-SIMS), it becomes possible to provide data free from the influence of high-concentration layers or metal films on the surface side.

  • Contract Analysis
  • Ion Mass Spectrometer

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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.

The miniaturization of devices has increased the need for evaluating the depth distribution of impurities in extremely shallow regions. To conduct an accurate assessment, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. Figure 1 shows examples of measurements of Si wafers implanted with BF2+ 1 keV, P+ 1 keV, and As+ 1 keV, using a primary ion beam energy of 250 eV to 300 eV.

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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

Can be evaluated with high reproducibility.

Due to the miniaturization of devices, it is necessary to evaluate the depth distribution of impurities in extremely shallow regions. To perform an accurate evaluation, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. In this study, the relative standard deviation of the surface density of B calculated from six measurements conducted over multiple days using a 1 keV oxygen ion beam on Si wafers implanted with B+ at low energy was found to be less than 3%, demonstrating that high reproducibility can be achieved in the evaluation of extremely shallow impurity distributions, similar to conventional SIMS analysis.

  • Contract Analysis
  • Ion Mass Spectrometer

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[Analysis Case] Investigation of Causes of Peeling in Plating and Coating

[Analysis Case] Investigation of Causes of Peeling in Plating and Coating

Identification of contamination sources on the cleavage surface using TOF-SIMS.

When delamination occurs, it is important to identify the components that have worsened the adhesion at the interface. By using a peeling process to physically delaminate at the interface of interest and measuring the components present on that surface with TOF-SIMS, it is possible to investigate the cause of delamination. TOF-SIMS detects secondary ions that are ionized while maintaining the structure of organic materials, allowing us to obtain information about the origin of the components present at the delamination surface, making it effective for investigating the causes of delamination and the process. Measurement methods: TOF-SIMS, peeling, disassembly Product fields: LSI, memory, manufacturing equipment, components Analysis purposes: Evaluation of chemical bonding states, failure analysis, defect analysis For more details, please download the materials or contact us.

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  • Ion Mass Spectrometer

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.

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[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

It is possible to obtain the dopant concentration profile from the SiC substrate side.

In the SiC power MOSFET (Figure 1), the concentration distribution of the dopant element Al in the SiC beneath the gate pad was evaluated using SIMS from both the surface side and the backside (Figure 2). Regardless of the direction of analysis, the distribution beyond a depth of approximately 0.5 μm also matches well, suggesting that the spread of the Al concentration distribution reflects the actual elemental distribution rather than being measurement-induced. SSDP-SIMS analysis is possible even on hard substrates like SiC, which are difficult to process. Please feel free to consult us first.

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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

Measurements will be taken according to the analysis conditions suited to the purpose.

This paper presents examples of evaluating the depth concentration distribution of the dopant elements N, Al, and P in commercially available SiC power MOSFETs using multiple analysis modes. Depending on the analysis objectives, it is possible to measure multiple elements simultaneously without measuring each element separately under optimal conditions. Examples are provided for cases of simultaneous multi-element measurement and measurements focused on each individual element.

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[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

IGZO films are materials that are being researched and developed as TFT materials for displays. There are concerns that the diffusion of metal elements into the IGZO film may degrade the TFT characteristics, so it is necessary to accurately measure the metal concentration within the film for evaluating the device characteristics and reliability using IGZO films. We will introduce a case where the Ti concentration in the IGZO film was evaluated from the opposite side of the metal electrode using SSDP-SIMS.

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  • Ion Mass Spectrometer

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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Silicon Using SIMS

[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Silicon Using SIMS

We will enhance the sensitivity and evaluate the concentration distribution at the ppt level.

The detection sensitivity in SIMS analysis depends on the amount of sputtered sample per unit time. Depending on the element, significantly improved sensitivity can be achieved by limiting the impurities to one element, allowing evaluation down to ppt (parts per trillion) levels of less than 5E13 atoms/cm3, which is effective for assessing low-concentration impurities in IGBT devices and high-purity wafers. This document presents examples of ultra-high sensitivity evaluations of low-concentration impurities in silicon.

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[Analysis Case] Evaluation of "Water" in Quartz and Glass Using SIMS

[Analysis Case] Evaluation of "Water" in Quartz and Glass Using SIMS

Depth-direction analysis of hydrogen using 'heavy water (D2O) treatment'

We will introduce a case where the permeability of water (H2O) in glass materials was evaluated by measuring the distribution of deuterium (D). When hydrogen (H) is already present, it is difficult to distinguish whether the hydrogen is due to the influence of water. Therefore, treatment with heavy water (D2O) was performed, and the distribution of the stable isotope deuterium was measured in depth using SIMS. By examining the depth distribution of deuterium, it is possible to estimate how deep the water has penetrated.

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[Analysis Case] Secondary Battery

[Analysis Case] Secondary Battery

Evaluation of the components distributed on the surface of a single particle of powder is possible.

We will introduce a case where a sheet coated with graphite negative electrode particles used in lithium-ion secondary batteries was analyzed using TOF-SIMS. It was confirmed that graphite and PVDF are distributed on the surface of a single powder particle. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a method suitable for qualitative analysis and imaging of organic and inorganic substances on surfaces from the mass spectrum of secondary ions. It is effective for evaluating the distribution of minute foreign substances and stains due to its high resolution. Measurement method: TOF-SIMS Product field: Secondary batteries Analysis purpose: Composition distribution evaluation For more details, please download the materials or contact us.

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[Case Study] Quality Control through Surface Analysis

[Case Study] Quality Control through Surface Analysis

The surface adhesion components (such as polydimethylsiloxane) can be evaluated using TOF-SIMS.

TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is a method that can sensitively evaluate organic and inorganic substances on the very surface, and it can be used as an analytical tool for various quality control processes of products. For example, it can be used for regular checks of surface contaminants during product storage, investigating the causes when defects such as peeling or discoloration occur in products, and analyzing changes in key components before and after altering manufacturing conditions. This document presents an example of comparing the surfaces of silicon wafers stored under different environments, focusing on the representative contaminant polydimethylsiloxane (PDMS). Measurement method: TOF-SIMS Product fields: Electronic components, manufacturing equipment, parts, and others (general electronics) Analysis purposes: Surface analysis, evaluation of chemical bonding states, failure analysis, defect analysis, and others (contamination assessment, quality control) For more details, please download the document or contact us.

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SSDP-SIM

SSDP-SIM

SSDP： Substrate Side Depth Profile

In secondary ion mass spectrometry (SIMS), due to phenomena such as surface roughness, the knock-on effect where atoms present on the surface are pushed inward by ion irradiation, and crater bottom roughness, it may not be possible to obtain sharp elemental distributions. To address this issue, the SSDP method (Back-Side SIMS) involves performing SIMS analysis from the substrate side (the back side) after thinning the sample. This technique allows for a more accurate evaluation of elemental distribution without being affected by the sample shape or measurement conditions.

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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films

[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

The SiON film used as the gate oxide film for Si transistors is formed by introducing nitrogen into the Si oxide film to suppress leakage current. To ensure a good interface characteristic with the substrate while maintaining the dielectric constant, it is necessary to strictly control the distribution of nitrogen in the SiON film. We will present a case study evaluating the distribution of silicon oxide and nitride in a 1nm thick SiON film using TOF-SIMS. TOF-SIMS has high depth resolution on the surface and can obtain molecular information with good sensitivity, allowing for a clear understanding of the compositional distribution in the ultra-thin SiON film.

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  • Transistor
  • Memory
  • Ion Mass Spectrometer

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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.

Impurities from components of the film formation device, target materials, and plating solutions can contaminate the device and have adverse effects, making the qualitative assessment of impurities on surfaces, within films, and at interfaces important. TOF-SIMS can sensitively evaluate unknown elements present on surfaces, within films, and at interfaces in a single measurement due to the following three characteristics: 1. For metallic elements, ions from m/z 1 to 800 can be detected simultaneously in one measurement. 2. Detection sensitivity of a few ppm can be achieved (varies depending on materials and ions). 3. The use of a sputter gun allows for the evaluation of depth distribution.

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  • Wafer
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  • Other semiconductors
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Impurity analysis of GaN gate oxide film

Impurity analysis of GaN gate oxide film

Successfully captured impurity diffusion from the upper side of the gate oxide film using D-SIMS!

In GaN devices, the diffusion of components (impurities) originating from the pre-process of the gate oxide film leads to insulation failures, making it necessary to identify their concentration distribution and diffusion sources. We have developed a technology that provides high flatness to the surface of thin-film processed GaN compounds. As a result, we successfully captured the diffusion of impurities from the upper side of the gate oxide film using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.

  • Other analysis and evaluation services
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Nitrogen concentration analysis of SiC n-buffer layer

Nitrogen concentration analysis of SiC n-buffer layer

Successfully captured the n-buffer layer thickness and nitrogen (N) concentration using D-SIMS!

In recent years, in SiC MOSFETs, an n-buffer layer on the order of several hundred nanometers has been inserted between the n-substrate and the n-drift layer to address on-resistance issues. In the evaluation of the n-buffer layer, it is necessary to thin the n-drift layer, which is positioned above and is on the order of several micrometers, to improve depth direction resolution and to flatten its surface. We have developed a technology that provides high flatness to the surface of SiC compounds processed as thin films. As a result, we successfully captured the thickness and nitrogen (N) concentration of the n-buffer layer using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, please feel free to contact us.

  • Other analysis and evaluation services
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