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Infineon Technologies' "Infineon Eco Block" has been redesigned using pressure contact (PC) technology to meet the cost improvement demands of large modules. While maintaining the standard package size, the design-to-cost (DTC) approach has reduced material costs. The new module retains the pressure contact (PC) technology while reducing functions to only the essential ones, achieving high reliability and excellent product lifespan. 【Features】 ■ Complete redesign of proven pressure contact technology ■ Fault tolerance ■ Class-leading DC blocking performance ■ High operating temperature ■ Standard package size *For more details, please refer to the PDF document or feel free to contact us.

Infineon Technologies' "EVAL-M1-IM818-A" has been developed to assist customers in developing applications using the CIPOS Maxi IPM from the very first stage. In combination with control boards featuring a 20-pin M1 interface connector, such as "EVAL-M1-101T" and "EVAL-M1-099M," it reproduces the motor drive operation of the "CIPOS Maxi IPM." 【Features】 ■ Three-phase motor drive power stage using a 1200V IPM ■ Nominal voltage value AC 380V ■ Maximum output of 2.6kW with cooling function ■ Onboard EMI filter ■ Overcurrent protection *For more details, please refer to the PDF documentation or feel free to contact us.

The diode chip achieves over 3000V high voltage resistance and low loss (low VF) through the fusion of its unique high voltage holding structure and diffusion technology. The newly developed package ensures the "creepage distance," "clearance distance," and "insulation withstand voltage" required for over 3000V high voltage modules. Furthermore, it realizes high heat dissipation (low thermal resistance). *For more details, please feel free to contact us.

The product from Infineon Technologies drives GaN HEMTs using high-efficiency commercially available single-channel isolated Gallium Nitride (GaN) EiceDRIVER ICs. CoolGaN enhancement mode HEMTs can achieve optimal driving by using Infineon's EiceDRIVER ICs: 1EDF5673K, 1EDF5673F, and 1EDS5663H. 【Features】 ■ Low resistance output source: 0.85Ω, sink: 0.35Ω <Single-channel galvanic isolation> ■ Functional isolation: VIO= 1500VPC ・VIOWM = 510Vrms (16-pin DSO) ・VIOWM = 460Vrms (LGA 5x5) ■ Reinforced isolation ・VIOTM = 8000Vpk (VDE 0884-10 undecided) ・VIOWM = 1420 VDC ■ Minimum common-mode transient immunity (CMTI): 200V/ns ■ Timing ・Minimum output pulse width: 18ns ・Propagation delay accuracy: 13ns *For more details, please refer to the PDF document or feel free to contact us.

Infineon Technologies' "CoolGaN 600V Series" is realized according to a specific certification process specialized for GaN, providing a robust and reliable solution. It is part of Infineon's lineup that maximizes the advantages of GaN, based on SMD packages that deliver high performance. 【Features】 ■ 600V power devices ■ Suitable for hard-switching and soft-switching topologies ■ Optimized for power supply turn-on and turn-off ■ Cutting-edge technology that enables innovative solutions and mass production ■ High efficiency for switching power supplies (SMPS) *For more details, please refer to the PDF document or feel free to contact us.

Infineon Technologies' "CoolMOS CSFD" features a high-voltage superjunction MOSFET equipped with a fast body diode. It achieves a low figure of merit (FOM) performance index due to low RDS(ON) x Qg and Eoss. It also boasts excellent reverse recovery diode dv/dt and dif/dt tolerance characteristics. 【Features】 ■ Ultra-fast body diode ■ Optimal efficiency for EV charging applications ■ High power density ■ High reliability level ■ Selection of appropriate RDS(on) and package combinations *For more details, please refer to the PDF materials or feel free to contact us.

Infineon Technologies' "XHP 3" is a module that enables a highly scalable design, achieving high reliability and high power density. It provides excellent solutions for demanding applications such as traction (railways), CAV, marine transport, and medium voltage drive equipment. Currently, there are two models available, and since they are the same size, product designers can build a uniform solution even if they adopt different rated currents and rated voltages to incorporate the optimal power conversion concept. 【Features】 ■ Excellent system scalability ■ Accelerated design-in process due to simple mechanical design ■ Clean switching operation with reduced losses ■ Supports high insulation (10kV) requirements for three-level applications *For more details, please refer to the PDF document or feel free to contact us.

Rectifying insulated diode module with two built-in diodes =Features= ■ Easy to connect in bridge (single-phase, three-phase) configurations ■ Insulated between electrode terminals and mounting base, facilitating heat sink design ■ Utilizes glass passivation for surface treatment, achieving high reliability *For more details, please feel free to contact us.

Rectifier insulated diode module with two built-in diodes =Features= ■ Easy bridge (single-phase, three-phase) connection ■ Insulated between electrode terminals and mounting base for high reliability ■ Utilizes glass passivation for surface treatment to achieve high reliability *For more details, please feel free to contact us.

Rectifier insulated diode module with two built-in diodes =Features= ■ Easy bridge (single-phase, three-phase) connection ■ Insulated between the terminal and the mounting base, facilitating heat sink design ■ Utilizes a balas passivation surface treatment for high reliability *For more details, please feel free to contact us.

SanRex DF60LA/LB80/160 Insulated diode module designed for three-phase full-wave rectification Internally connected with six diodes in a three-phase bridge configuration, the rated DC output current is 60A (Tc=111℃), and the rated peak repetitive reverse voltage is up to 1600V =Features= ■ LA type has no barrier, LB type has a barrier ■ Being an insulated type (between electrode terminal and mounting base), it can be mounted on the same fin as other power modules *For more details, please feel free to contact us.

SanRex DF100LA/LB80/160 The DF100AL/LB series is an insulated diode module designed for three-phase full-wave rectification. It internally connects six diodes in a three-phase bridge configuration, with a rated direct current output of 100A (Tc=90°C) and a maximum rated peak reverse voltage of up to 1600V. =Features= ■ The LA type has no barrier, while the LB type has a barrier. ■ Being an insulated type (between electrode terminals and mounting base), it can be mounted on the same fin as other power modules. *For more details, please feel free to contact us.

=Features= ■ 200A high-capacity three-phase rectifier diode bridge ■ Slim design with a height of 17mm despite high current capacity ■ Achieves high heat dissipation (low thermal resistance) through a low-layer internal structure *For more details, please feel free to contact us.

SanRex DKA60KB80/160 Rectifier diode module with 2 built-in diodes =Features= ■ Common cathode terminal, 2 pieces included ■ Insulated package ■ Utilizes glass passivation type chips for high reliability *For more details, please feel free to contact us.*

High-Speed Diode Module FDS100CA120 Developed for high-power switching, it features low loss and high-speed operation, making it ideal for applications handling high frequency and high power with a two-element insulated module. =Features= ■ High voltage resistance 1200V ■ Fast reverse recovery time Trr≦300ns ■ Average on current 100A (per element) ■ Easy installation due to its insulated design ■ High surge current *For more details, please feel free to contact us.

SanRex KD160KB80/160 Insulated Diode Module for Rectification =Features= ■ Two common cathode terminals included ■ Insulated package ■ Utilizes glass passivation type chips for high reliability ■ Proven track record in solar power connection boxes *For more details, please feel free to contact us.

SanRex BKR400AB10 Developed for high power rectification, ideal for applications handling large power with low loss 2-element non-isolated Schottky diode module =Features= ■ Low on voltage: 0.93V ■ Average on current: 200A (per element) ■ VRRM: 100V ■ High surge current *For more details, please feel free to contact us.

SanRex Triac/SCR TMG/SMG Series =Features= ■ Guaranteed Tj = 150℃ (Q series) Tj max = 150℃ (Q series) ■ Low loss Vt = 1.4V (Triac It = 3A and above) Achieved low on-voltage and good breakdown characteristics through optimization of the wafer and process ■ The Triac lineup includes 800V rated products *For more details, please feel free to contact us.

Infineon 1350V Protection IGBT F Series Details: The Protection IGBT F Series is a product designed for IH cooking applications, combining a 1350V, 20A IGBT with RC-H5 technology in a 6-pin TO-247 package and a unique protection gate driver IC. Advantages: ■ Reduces board complexity and cost by turning on beyond the threshold ■ Mitigates board complexity and reduces overall solution costs ■ Lessens complexity on the board and design-in effort ■ Simplifies BOM and reduces costs for total solutions

600V High Voltage Small Lightweight Non-Isolated High-Speed Diode Module For secondary side rectification applications such as welding machines and plasma cutting machines, high-speed diodes are used that have high voltage resistance, low switching loss, and low reverse leakage current. By combining high-speed diode chips with our unique Techno Block packaging technology, we achieve excellent long-term reliability, high-temperature operation, and miniaturization and lightweight design. *Techno Block Packaging Technology A packaging technology that combines a structure that sandwiches metal and chips with solder bonding and a transfer mold rear, resulting in a small, high heat dissipation, and high reliability package. =Features of Techno Block= ■ High power cycle endurance (more than 3 times compared to conventional) ■ Capable of high-temperature operation Tj=150℃ ■ Miniaturization and lightweight design (10% lighter compared to current models)

Infineon Technologies' "TRENCHSTOP IGBT7" adopts a new structure with "micro-pattern trench" technology, significantly reducing losses and achieving a high level of controllability. The chip is specialized for industrial drive applications, enabling a substantial reduction in static losses, high power density, and softer switching. Furthermore, by increasing the maximum allowable operating temperature in power modules under overload conditions to 175°C, it can significantly enhance power density. 【Features】 ■ Low on-voltage VCE(sat) and Vf ■ Overload Tvj op=175°C ■ Improved dv/dt controllability ■ Optimized switching loss dv/dt = 5kV/μs ■ Short-circuit withstand time 8 μs ■ Improved soft switching characteristics of the freewheeling diode *For more details, please refer to the PDF document or feel free to contact us.

Infineon Technologies' "Easy 1B, 2B" is a power module equipped with SiC MOSFETs. By combining the features of the Easy power module, which has become the standard for low stray inductance, with the characteristics of Infineon's 1200V CoolSiC MOSFET chips, it is possible to reduce system costs and operating costs. This product is immediately usable for applications that require short-circuit resistance. 【Features】 ■ Approximately 80% reduction in switching losses compared to Si ■ Low conduction losses due to linear output characteristics ■ A wide range of commercially available CoolSiC MOSFETs in the Easy package ■ Excellent reliability of the gate oxide layer ■ Low reverse recovery charge in the body diode ■ High threshold voltage of over 4V ■ Short-circuit withstand time of 2μs *For more details, please refer to the PDF document or feel free to contact us.

The "650V CoolMOS CFD7 Family" is a well-known successor to Infineon's established CoolMOS CFD7 family, which expands the voltage range of the CoolMOS CFD2. With an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior, it enables high efficiency and power density levels in soft switching applications. 【Features】 ■ Ultra-fast body diode & ultra-low Ωrr ■ 650V breakdown voltage ■ Excellent RDS(on)/package combination in its class ■ Significant reduction in switching losses ■ Extremely low temperature dependence of RDS(on) *For more details, please refer to the PDF document or feel free to contact us.

The "F3L11MR12W2M1_B74" uses high-current silicon diodes and is a module suitable for energy storage systems, supporting the full range of cosφ. When connected in parallel, it can achieve 150kW of power in solar systems and 75kW per module in storage systems. Additionally, it features class-leading CoolSiC trench MOSFET technology, ensuring excellent gate oxide reliability. 【Features】 ■ CoolSiC trench MOSFET technology ■ 3-level ANPC topology ■ Full functionality with 1200V switches for DC1500V ■ Increased rated current for Si diodes ■ PressFIT technology *For more details, please refer to the PDF document or feel free to contact us.

The "EiceDRIVER X3 Compact (1ED31xx)" is a gate driver family that includes an option with a mirror clamp function. It is compact and easy to design. The previously released gate driver family has been supplemented with a DSO-8 150 mil narrow body package. 【Features】 ■ For IGBT (including IGBT7), SiC, Si, MOSFET ■ Output current of 14A, propagation delay matching of 7ns ■ Propagation delay of 90ns, with an input filter of 30ns ■ Absolute maximum output supply voltage of 40V ■ Separation of source output and sink output or active mirror clamp *For more details, please refer to the PDF materials or feel free to contact us.

The "EiceDRIVER High-Speed Level Shift 650V" enables switching at high frequencies with a propagation delay of 90ns and a maximum delay matching of 10ns. In addition to incorporating a super-fast bootstrap diode, it features excellent negative VS transient tolerance and UVLO functionality for each channel, allowing for superior performance and reduced BOM costs. It can be used in applications such as SMPS, UPS, eV wall chargers, battery chargers, and LED lighting fixtures, particularly in LLC/LCC resonant ZVS topologies. 【Features】 ■ Operating voltage (VS node) up to +650V ■ Negative VS transient tolerance up to 100V (pulse width 300ns) ■ Built-in super-fast, low-resistance bootstrap diode ■ 90ns propagation delay, 10ns (maximum) delay matching ■ Supports switching frequencies up to 500kHz *For more details, please refer to the PDF document or feel free to contact us.

The "OptiMOS5 25V and 30V Power MOSFET" is a semiconductor that can replace two parts with one O-ring application. With this product, Infineon achieves high power density and energy efficiency both in standby and full operation, providing benchmark solutions. These top-class MOSFETs are offered in a SuperSO8 package. 【Features】 ■ Very low on-resistance RDS(on) ■ 100% avalanche tested ■ Excellent thermal resistance ■ N-channel ■ Lead-free plating, RoHS compliant *For more details, please refer to the PDF materials or feel free to contact us.

The "OptiMOS6 Power MOSFET 40V Normal Level" is a semiconductor with normal gate drive that does not malfunction even in noisy environments. By reducing the QGD/QGS ratio, it is possible to suppress the peak of gate voltage spikes and further enhance robustness against unwanted turn-on. The "ISC007N04NM6" achieves an extremely low RDS(on) of 0.7mΩ. 【Features】 ■ N-channel - Enhancement mode ■ Normal level gate threshold of 2.3V (Typ.) ■ 175℃ junction temperature (Tj) ■ Optimized for dv/dt immunity with a charge ratio QGD/QGS < 0.8 ■ Low gate charge *For more details, please refer to the PDF document or feel free to contact us.

The "StrongIRFET2 Power MOSFET" is Infineon's MOSFET technology that supports a wide range of applications. It is suitable for both low and high-frequency switching. This product complements the well-established StrongIRFET MOSFET and offers higher performance. 【Features】 ■ Wide supply from sales partners ■ Excellent price/performance ratio ■ Suitable for high and low switching frequencies ■ High current ratings *For more details, please refer to the PDF document or feel free to contact us.

The "TOLT package OptiMOS5 80V/100V" is a semiconductor suitable for main inverters in high-power applications and small electric vehicles. It features a special finish on the exposed pad to ensure excellent thermal conductivity. With electronic control units equipped with high output performance designed for top-side cooling of the power stage more than ever before, Infineon has complemented its MOSFET lineup with a dedicated package to support this new requirement. 【Features】 ■ TOLT package specialized for top-side cooling ■ Minimum RDS(on) reduced to 1.1mΩ at 80V and 1.5mΩ at 100V ■ Low package resistance and minimized parasitic inductance ■ Narrow VGS(th) range ■ Diverse RDS(on) options to meet power requirements for various applications *For more details, please refer to the PDF document or feel free to contact us.

Features: ■ Low Loss Achieves low loss (low VF=1.4V (typ)) and high softness through local lifetime control. Low loss with leakage current IRRM≦50mA Less than half compared to conventional products (Manufacturer comparison Tj=150℃) ■ Low Noise Significantly reduces noise caused by surge current during reverse recovery.

■ Compatible with DC1000V string solar power systems Effective in protecting solar panels and preventing output power reduction ■ Adopts an easy-to-wire terminal arrangement ■ By increasing the string voltage, the total number of strings in the system can be reduced, allowing for thinner wiring and shorter wiring lengths ■ New development with dedicated diode chips, achieving high voltage resistance while improving VF and thermal resistance ■ Insulated package containing two units with a withstand voltage of 2200V ■ Low Vf (forward voltage drop) Vf(typ)=0.87V(IF=10A, Tj=25℃)

The "Techno Block" series is a semiconductor module with a small, high heat dissipation package that employs double-sided solder bonding and transfer molding. ■ High power cycle durability ■ Compact and lightweight ■ High temperature operation

■ Compatible with DC1500V string solar power generation systems ■ Insulation-type package with a DC reverse voltage withstand of 3000V (per chip) ■ Achieves high voltage resistance while maintaining low loss and high heat dissipation By increasing the voltage of the string, the overall loss of the power generation system is reduced, leading to improved power generation efficiency. Additionally, the number of parallel strings can be reduced, which decreases the length of wiring and the number of circuits in the junction box, resulting in lower installation costs.

■ Significantly reduced thermal resistance ■ Space-saving achieved by reducing the number of components ■ Adoption of dual terminals that balance high current capacity and good solderability ■ Product identification possible even in mounted state with double-sided marking

■ Achieves a slim design of 17mm in height while handling high current ■ Can be mounted at the same height as a 17mm high IGBT module ■ Realizes high heat dissipation (low thermal resistance) and lightweight design through a low-layer internal structure

Features ■ Insulated package with two high-power elements (SOT-227) ■ Supports miniaturization and thin design of devices ■ Low loss and capable of high-speed drive ■ Low on-voltage ■ High-speed soft recovery