Module "Easy 1B, 2B"

Due to its high efficiency, operational costs can also be reduced. A power module with high power density.

Infineon Technologies' "Easy 1B, 2B" is a power module equipped with SiC MOSFETs. By combining the features of the Easy power module, which has become the standard for low stray inductance, with the characteristics of Infineon's 1200V CoolSiC MOSFET chips, it is possible to reduce system costs and operating costs. This product is immediately usable for applications that require short-circuit resistance. 【Features】 ■ Approximately 80% reduction in switching losses compared to Si ■ Low conduction losses due to linear output characteristics ■ A wide range of commercially available CoolSiC MOSFETs in the Easy package ■ Excellent reliability of the gate oxide layer ■ Low reverse recovery charge in the body diode ■ High threshold voltage of over 4V ■ Short-circuit withstand time of 2μs *For more details, please refer to the PDF document or feel free to contact us.

Other semiconductors