It is a semiconductor that can further enhance robustness against unnecessary turn-ons!
The "OptiMOS6 Power MOSFET 40V Normal Level" is a semiconductor with normal gate drive that does not malfunction even in noisy environments. By reducing the QGD/QGS ratio, it is possible to suppress the peak of gate voltage spikes and further enhance robustness against unwanted turn-on. The "ISC007N04NM6" achieves an extremely low RDS(on) of 0.7mΩ. 【Features】 ■ N-channel - Enhancement mode ■ Normal level gate threshold of 2.3V (Typ.) ■ 175℃ junction temperature (Tj) ■ Optimized for dv/dt immunity with a charge ratio QGD/QGS < 0.8 ■ Low gate charge *For more details, please refer to the PDF document or feel free to contact us.
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basic information
【Main Advantages】 ■ Normal gate drive that does not malfunction even in noisy environments ■ Increased operating temperature for robust design ■ Improved system efficiency and power density due to reduced switching losses ■ Suitable for motor control technologies such as FOC and DTC ■ Enhanced conductivity *For more details, please refer to the PDF document or feel free to contact us.
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【Applications】 ■ Battery-powered applications ■ Battery-operated tools ■ Battery management ■ Low voltage operation *For more details, please refer to the PDF document or feel free to contact us.
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Our company was founded in 1968 and has been involved in the sale of electronic components as well as the development of various electronic devices. At Asahi Tech, we continue our efforts in all aspects of development, including cost, quality, marketing, sales, and distribution efficiency, without ever becoming complacent, and we will keep accelerating our momentum. With excellent technical capabilities and a unique perspective that responds to the information age, we aim to be a one-of-a-kind company that contributes to society through the proposal and development of unique products as a trading company with manufacturing functions. Tokyo Branch: Tel: 03-3835-4881 / Fax: 03-3832-4016