オンセミ Product Lineup

We would like to introduce our "MOSFET High Voltage (Automotive)" products. They support a wide power range and are compatible with automatic visual inspection (wettable flank). The features include an industry-standard footprint and a proven package lineup. Please feel free to consult us when you need assistance. 【Products (partial)】 ■ NVHL110N65S3HF ■ NVHL110N65S3F ■ NVHL095N65S3HF ■ NVHL095N65S3F ■ NVHL082N65S3HF *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce the "MOSFET High Voltage (Industrial Equipment)" that we handle. It supports a wide range of applications, including renewable energy, data centers, and battery power applications. This is a broad portfolio that meets the requirements for higher current density, higher switching performance, and higher thermal performance. 【Products (Partial)】 ■NVHL110N65S3HF ■NVHL110N65S3F ■NVHL095N65S3HF ■NVHL095N65S3F ■NVHL082N65S3HF *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce the "MOSFET LM MOSFET (Automotive)" that we handle. This is a comprehensive portfolio of low to medium voltage power MOSFETs that achieve excellent performance and reliability for switching applications. It features high power density, reduced switching losses, and excellent thermal performance, significantly improving system performance. 【Products (partial list)】 ■STTFS015N10MCL ■STMFSC3D1N08M7 ■STMFSC017N15M5 ■STMFSC008N10M5 ■STD5407N *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce the "MOSFET LM MOSFET (Industrial Equipment)" that we handle. With low RDS(on), it significantly improves system efficiency. The low capacitance and low gate charge have greatly reduced switching losses. Our advanced package provides excellent thermal performance. Please feel free to consult us when you need assistance. 【Products (Partial)】 ■NVMFS5C450NAFT1G-YE ■NVMFS5C450NET1G ■NVMFS5C450NET1G-YE ■NVMFS5C450NET3G-YE ■NVMFS5C450NWFET1G *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce our "MOSFET Small Signal MOSFETs" that we handle. A comprehensive portfolio of high-speed switching small signal MOSFETs that cater to a variety of applications. Please feel free to consult us when you need assistance. 【Products (partial)】 ■SI4532DY ■NVTR4503N ■NVTR4502P ■NVTR01P02L ■NVTJD4001N *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce the "IGBT (Insulated-Gate Bipolar Transistor)" that we handle. This IGBT (Insulated Gate Bipolar Transistor) provides top-class reliability for high-performance power conversion applications. Please feel free to consult us when you need assistance. 【Products (partial list)】 ■FGD3N60LSD ■AFGB30T65RQDN ■AFGHL30T65RQDN ■AFGHL40T65RQDN ■AFGB40T65RQDN *For more details, please download the PDF or feel free to contact us.

We would like to introduce the "Power Module IGBT Modules" that we handle. IGBT modules are used in traction, solar inverters, energy storage systems, uninterruptible power supplies, and DC-AC stages for motor drives. Please feel free to consult us when you need assistance. 【Products (partial)】 ■SNXH800H120L7QDSG ■NXH80T120L3Q0 ■NXH800H120L7QDSG ■NXH800A100L4Q2F2 ■NXH75M65L4Q1 *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce the "Power Module MOSFET Module" that we handle. These modules are available with ratings of 40V, 60V, 80V, and 650V, equipped with super junction technology and sense resistors. In addition to six-pack and full and half-bridge topologies, there is also a totem pole PFC topology. 【Products (partial)】 ■NXV65HR82D ■NXV65HR51DZ ■NXV10V160ST1 ■NXV10V125DT1 ■NXV08V110DB1 *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce our "Power Module Si/SiC Hybrid Module." This is an IGBT integrated power module that achieves high power density, reducing switching losses compared to conventional non-hybrid modules, and enabling operation in higher temperature environments. It demonstrates excellent efficiency characteristics in high-frequency switching systems. 【Products (partial list)】 ■NXH600N105H7F5S2HG ■NXH600N105H7F5S1HG ■NXH600N105H7F5P2HG ■NXH600B100H4Q2F2S1G ■NXH600B100H4Q2F2 *For more details, please download the PDF (English version) or feel free to contact us.

We would like to introduce our "Power Module IPM Module." This is a high-voltage power module with a built-in gate driver designed for consumer, industrial, and automotive applications. It can be used in various topologies, such as PFC and input bridge rectifiers. Please feel free to consult us when you need assistance. 【Products (partial list)】 ■FAM65V05DF1 ■FBA42060 ■FCBS0550 ■FNA21012A ■FNA22512A *For more details, please download the PDF or feel free to contact us.

We would like to introduce the "Power Module SiC Module" that we handle. This is a high-efficiency power module that integrates SiC MOSFETs and SiC diodes, and the boost module is suitable for the DC-DC stage of solar inverters. The SiC power module is responsible for power conversion through switching, achieving high efficiency for the entire system. Its low loss characteristics enable high-frequency switching, enhancing design flexibility. 【System Benefits】 ■ Significant reduction in energy loss due to high efficiency ■ Realization of compactness and lightweight, optimizing system design ■ Contribution to simplified heat dissipation design and improved reliability due to excellent thermal characteristics *For more details, please download the PDF or feel free to contact us.

We would like to introduce the "Sic SiC Diodes" that we handle. Innovative SiC technology that achieves performance surpassing conventional Si. It simultaneously realizes high efficiency, low loss, and high-temperature operation, accelerating new power conversion. Please feel free to consult us when you need assistance. 【Products (partial)】 ■ UJ3D1725K2 ■ UJ3D1250K2 ■ UJ3D1250K ■ UJ3D1220KSD ■ UJ3D1220K2 *For more details, please download the PDF or feel free to contact us.

We would like to introduce the "Sic SiC MOSFET" that we handle. It is a MOSFET with an insulated gate structure, designed similarly to silicon MOSFETs, yet achieving higher voltage resistance and excellent thermal conductivity. It features high speed and robustness, enabling compact and low-cost high-efficiency system designs. Systems using SiC MOSFETs achieve higher performance and efficiency compared to traditional silicon-based systems. 【Benefits】 ■ Supports high-frequency switching, maximizing performance and efficiency ■ Stable operation even in high-temperature environments ■ Miniaturization of peripheral components (inductors, filters, etc.) enables overall system miniaturization *For more details, please download the PDF or feel free to contact us.

We would like to introduce the "SiC MOSFET Bare Die" that we handle. ON Semiconductor's SiC bare die are optimized for use in high-power applications such as EV traction inverters, DC-DC converters, and off-board chargers. Please feel free to contact us when you need assistance. 【Product】 ■NCS025M3E120NF06X *For more details, please download the PDF (English version) or feel free to contact us.

"SiC JFETs" are high-performance normally-on transistors that support voltage ratings from 650V to 1700V. They achieve ultra-low on-resistance (RDS(on)) starting from a maximum of 4mΩ, achieving high efficiency with chip sizes less than half that of other technologies. With low gate charge (Qg), they significantly reduce conduction losses and switching losses. 【Features】 ■ Supports high-frequency switching ■ Suitable for power supply units (PSU) and high-voltage DC-DC converters ■ Achieves high-efficiency power conversion to meet the high power requirements of AI data centers ■ In EV battery disconnect units, replaces multiple components with SiC JFET-based solid-state switches, improving efficiency and safety ■ Compatible with advanced topologies such as energy storage systems and SSCB *For more details, please refer to the related links or feel free to contact us.

"SiC Cascade JFETs" are products that achieve class-leading switching speeds, contributing to reduced switching losses and increased efficiency. They support high-frequency switching and achieve ultra-low on-resistance (RDS(on)) starting from a minimum of 5mΩ, while achieving high power density with chip sizes less than half that of other technologies. They are compatible with through-hole (including Kelvin-compatible) and surface mount packages, providing excellent cost performance. 【Features】 ■ Compatible with standard gate drive (0-12V) ■ Can utilize existing driver circuits despite being SiC devices ■ Optimizes system performance and cost structure due to small chip size and compatibility with existing drivers ■ An innovative SiC cascode JFET solution that simultaneously achieves high efficiency, high density, and low cost for power conversion *For more details, please download the PDF (English version) or feel free to contact us.