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Our PCB and FPC board analysis service assigns common numbers to each component, corresponding to the parts list and circuit diagram, indicating the mounting position of each component. Since the component numbers are the same as those in the "circuit diagram" and "parts list," it is possible to verify how components are used in the circuit and their specifications. For unmounted (NM: Non Mount) components, we assign numbers for each unmounted location, such as "NM000," so that it is clear on the circuit diagram that these locations are unmounted. 【Features】 ■ Assigns common numbers to each component, corresponding to the parts list and circuit diagram, indicating the mounting position of each component. ■ In the case of unmounted components, assigns numbers for each unmounted location, such as "NM000," making it clear on the circuit diagram that these locations are unmounted. ■ Reflection of test points is optional. *For more details, please refer to the PDF materials or feel free to contact us.
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Free membership registrationOur PCB and FPC board analysis service creates flat circuit diagrams from extracted wiring information, functionally organizing the information to make it easier to understand the operation while identifying power nodes and main routes. The output consists of a block diagram showing the overall functionality and signal flow, along with detailed circuit diagrams (schematics). If you only need the connection information, we can also deliver a flat circuit diagram (without summarization), and in this case, we can offer it at a lower price. 【Features】 ■ Creation of flat circuit diagrams from extracted wiring information ■ Output consists of a block diagram showing overall functionality and signal flow, along with detailed circuit diagrams (schematics) ■ Delivery in OrCAD data format is also available (optional) *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationOur PCB and FPC board analysis service investigates components removed from the boards and identifies their types and element constants. The part numbers are common with the "schematics" and "component placement," allowing for verification of the specifications, usage in the circuit, and placement on the layout. Thanks to our unique database, we can identify the functions of most ICs, but there may be cases where we cannot identify special ICs like ASICs. In such cases, we can extract the IC chip for verification of the manufacturer and function estimation through chip marking, so please consult us separately. 【Features】 ■ Investigate components removed from the board and identify their types and element constants ■ Verify specifications, usage in the circuit, and placement on the layout ■ Requests for parts lists solely for cost investigation purposes are also possible *For more details, please refer to the PDF materials or feel free to contact us.
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Free membership registrationOur PCB and FPC substrate analysis service removes the layers of the substrate to extract wiring information. We receive many requests for automotive substrates, but we also have extensive experience with substrates that have specific applications, such as high-density mounted substrates like those used in smartphones, as well as ceramic substrates for high-frequency and camera modules. Additionally, we can provide data in Gerber format or DFX format (optional). 【Features】 - Proven track record with substrates that have specific applications, such as high-density mounted substrates like those used in smartphones, and ceramic substrates for high-frequency and camera modules. - Data can also be provided in Gerber format or DFX format (optional). *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThis document is a research report on "On-Board Powertrain & Power Transistors." As efforts to combat global warming and achieve carbon neutrality progress, the electrification of vehicles is advancing, leading to practical applications and increased market competition among companies. High-voltage power devices (IGBT, RC-IGBT, SiC) are highlighted as key components that determine "low loss," "high reliability," and "cost" in relation to electrification. [Overview (Excerpt)] ■ Background ■ Report Structure (Table of Contents) *For more details, please refer to the PDF document or feel free to contact us.*
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Free membership registrationThis document is a structural and process analysis report on DENSO's SiC-MOSFET. The 2021 Toyota MIRAI hydrogen fuel cell (FC) boost converter incorporates DENSO's in-house manufactured SiC-MOSFET. The SiC-MOSFET chip features low ON resistance (measured with LTEC) at a drive current of 200A class, and the chip size is among the largest for automotive applications. [Overview of Contents (Excerpt)] ■ Product and Analysis Overview ■ Report Contents *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThis document is a circuit analysis report of the BOSCH DCDC converter installed in the Volkswagen ID.3. The "Volkswagen ID.3" began deliveries in Europe in early September 2020. It adopts the "MEB" platform developed specifically for electric vehicles. This report includes a product disassembly and circuit analysis of the installed DCDC converter. [Overview (excerpt)] ■ Summary ■ Product Features ■ Analysis Content ■ Report Price *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThis document is an analysis report of the "2021 Denso Power Card Module, SiC-MOSFET Chip." This product is a power card equipped with SiC-MOSFETs, used in the power module of the 2021 Toyota MIRAI hydrogen fuel cell (FC) boost converter. The boost converter has an output voltage Vo = 650V and an input current Iin = 570A. [Overview (Excerpt)] ■ Product and Analysis Overview ■ Report Contents *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationThis document is a circuit analysis report of the PCU (DCDC converter: manufactured by Toyota Industries) installed in the TOYOTA Yaris (HV). Toyota's representative compact car, the Vitz, was released in February 2020 under the new name "Yaris." It is equipped with an evolved system of the conventional method (used in the Prius), known as "THSII (Toyota Hybrid System II)." This time, the control unit is the subject of analysis. [Overview of Contents (Excerpt)] ■ Overview ■ Product Features ■ Report Content ■ Report Price *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationWe provide the "Structural Analysis, Process, and Device Characteristics Analysis Report for Fuji Electric's EV and HEV IGBT Module (6MBI800XV-075V-01)." The Ice-Vce characteristics of the RC-IGBT, off-state collector leakage current, and breakdown voltage are measured, and the activation energy is calculated from the temperature dependence of the off-leak current. A comparison is made with Infineon's IGBT7. [Analysis Points] - The module analysis report confirms the internal structure of the module and clarifies the arrangement and layout of the RC-IGBT. - The chip structure analysis report reveals the planar layout and cross-sectional structure of the IGBT and FWD regions of the RC-IGBT. - The process analysis report discusses the process technology of the RC-IGBT, estimates the number of masks, and outlines the manufacturing process flow, among other details. *For more information, please download the PDF or feel free to contact us.*
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Free membership registrationWe offer the "Toshiba Device & Storage SiC MOSFET (TW070J120B) Structural Analysis, Process, and Device Characteristics Analysis Report." The process and device characteristics analysis report estimates the manufacturing process flow based on the structural analysis results, estimates the number of photomasking process steps, analyzes the doping concentration of the N-epitaxial layer (drift layer), and conducts on-resistance analysis and breakdown voltage analysis. [Analysis Highlights] - Structural Analysis Report - Clarifies the planar layout and cross-sectional structure of the SiC-MOSFET - Conducts cross-sectional structure analysis of the SBD region, which is a feature of this product, and EDX analysis of the SBD metal - Process and Device Characteristics Analysis Report - Measures Schottky diode characteristics and compares them with the built-in body diode characteristics of other companies' SiC-MOSFET products, among other analyses. *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe offer a report titled "Analysis Report on High-Temperature Operating Power Transistors." This report focuses on how the SiC-based power MOSFET (SCT30N120) from STMicroelectronics achieves operation at high temperatures (Tj=200℃) and provides a technical analysis. [Analysis Techniques] - Semiconductor chip structure/materials (technologies related to device materials and thermal expansion) - Bonding wire (technologies addressing cracks and delamination caused by thermal cycles) - Die attach materials structure and composition (innovations for temperature resistance) - Mold encapsulation resin (enhancements in temperature resistance through special material additives) *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe provide the "TOYOTA Yaris (HV) PCU (DCDC Converter: manufactured by Toyota Industries) Circuit Board Analysis Report." The TOYOTA Yaris is equipped with an evolved system based on the conventional THS II (Toyota Hybrid System II) used in the Prius, and this report focuses on analyzing its control unit. [Report Contents] ■ PCU Disassembly (only extraction of the DCDC converter module from the back side of the PCU) ■ DCDC Converter Module Disassembly ■ Layout of each layer of the DCDC Converter Circuit Board, functional block diagram, detailed circuit diagram, parts list *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe provide the "Navitas GaN Power IC (NV6117 & NV6115) Structural Analysis Report." The structures of the low-voltage transistors, resistive elements, capacitive elements, and GaN epitaxial layers of NV6117 and NV6115 are presumed to be similar, and we analyze them using different samples. [Report Contents] ■ Comparison of 600V GaN products (NAVITAS, GaN Systems, Panasonic) ■ Package observation, X-ray observation, chip observation ■ Chip planar observation ■ Cross-sectional SEM analysis of high-voltage/low-voltage GaN transistors, resistive elements, and capacitive elements ■ GaN epitaxial layer TEM-EDX material analysis *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe offer the "Infineon IGBT6 (IKQ75N120CS6XKSA1) Structural Analysis Report and Process Analysis Report." This report includes a comparison of the characteristics of IGBT4 (HighSpeed3), IGBT5, and IGBT6. Please feel free to contact us if you have any requests. 【Report Contents】 ■ Structural Analysis Report - Package appearance, X-ray observation, package cross-section analysis, chip structure analysis, EDX material analysis - Electrical characteristic measurements (breakdown voltage, IC-VCE, capacitance characteristics) - Comparison of characteristics with HighSpeed3 IGBT and IGBT5 ■ Process Analysis Report - Manufacturing process flow and device characteristic analysis report based on structural analysis results *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe provide the "Structural Analysis and Process Analysis Report for GaN Systems 100V GaN Transistor (GS61008T-E01-MR)." The structural analysis report clarifies the details of the GaN power transistor "GS61008T-E01-MR" from GaN Systems, while the process flow analysis report estimates the chip manufacturing process based on the results of the structural analysis. [Report Contents] ■ Structural Analysis Report - Package appearance, X-ray observation, chip plane analysis (wire connections, layout confirmation), chip cross-section analysis (GaN transistor, chip edge), GaN-Epi layer TEM-EDX analysis - Electrical characteristic measurements (Id-Vd, BVdss, capacitance characteristics) ■ Process Analysis Report - Extraction and estimation of manufacturing process flow, number of masks, process sequence cross-sectional diagram - Correlation analysis between electrical characteristics and device structure *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe offer the "Circuit Analysis Report of the Continental Inverter IGBT Control Board Mounted in the Jaguar I-Pace." The report includes product disassembly and circuit analysis of the mounted IGBT control board. Please feel free to contact us if you have any requests. [Analysis Contents] - Disassembly process of the INV unit - List of components mounted on the IGBT control board - System configuration diagram and detailed circuit diagram *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe offer the "BYD Yuan EV360 Equipped with BYD In-house Battery Control Board (Cell Voltage Monitoring Board) Circuit Analysis Report." We conduct analysis of the complete battery control board set (battery ECU, cell voltage monitoring, communication Gateway). [Analysis Contents] - List of components mounted on the cell voltage monitoring board - Block diagram - Detailed circuit diagram *For more details, please download the PDF or feel free to contact us.
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Free membership registrationWe provide an analysis report titled "ANALOG DEVICES PSiP (Power Supply in Package) LTM4700 uModule Regulator Structure and Implementation Analysis Report," which selects and analyzes representative products to clarify the packaging technology used in advanced PSiP. This analysis report reveals the technologies used to achieve the performance of the LTM4700 product. [Report Contents] - Structure and package layout of high-current switching MOSFETs - HS/LS half-bridge, source-down configuration of LS FETs - Shielded double poly-Si trench MOSFET structure for high area efficiency - Analysis of a double-sided Cu lead frame package - Identification of controller ICs, etc. *For more details, please download the PDF or feel free to contact us.
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Free membership registrationLTech Co., Ltd. is selling the "Short-Circuit Withstand Evaluation and Analysis Report." Compared to other SiC MOSFETs that explode at the moment of short-circuit failure, INFINEON CoolSiC MOSFETs fail softly without exploding. This report measures short-circuit withstand capability and clarifies the failure mechanisms. 【Features】 ■ Analysis and evaluation to identify the physical mechanisms that limit the short-circuit withstand capability of advanced SiC transistors based on test measurement data results. ■ Extraction of critical temperature and failure energy up to breakdown. ■ Analysis of the failure mode. ■ Comparison of the short-circuit withstand capability of INFINEON and other companies' 1200V transistors. ■ Clarification of changes in transistor structure and processes to enhance short-circuit resistance. *For more details, please refer to the PDF document or feel free to contact us.
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Free membership registrationAt Eltech, we utilize our extensive database of analytical research data based on a wealth of experience to provide detailed and timely analysis reports tailored to our customers' needs. "I want information on new products and technical capabilities from Competita." "I want to know the circuit diagrams and device structures of semiconductor products." "I need technical information from the other party during patent license negotiations." When such requests arise, isn't your company's design and development engineers responsible for semiconductor product analysis? Please leave it to us. We will respond with our excellent analytical technology. 【Semiconductor Products】 ■ Silicon semiconductors, compound semiconductors ■ Power devices, high-frequency devices, integrated circuits (up to 14nm), sensing devices, MEMS ■ Various modules (high-frequency modules, power modules, sensor modules) *For more details, please refer to the PDF materials or feel free to contact us.
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