RAMXEED List of Products and Services

FeRAM (Ferroelectric Random Access Memory) is a non-volatile memory with the characteristics of high-speed operation. It does not require battery backup for data retention and has advantages in terms of high-speed writing, high rewrite endurance, and low power consumption compared to other non-volatile memories such as EEPROM and flash memory. [Features] - Non-volatile: No battery backup required - High-speed writing: No erase operation required - High rewrite endurance: Guaranteed for 10 trillion cycles (with some exceptions) *For more details, please download the PDF or feel free to contact us.

Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are smaller, higher-performing, and lower in power consumption, as well as proposing optimal solutions that combine memory.

Our company, in collaboration with E Ink Holdings Inc., has developed a technology that allows for the rewriting of electronic paper displays wirelessly via UHF band power supply, making it battery-less. Unlike NFC for close communication, this UHF band technology significantly improves the communication distance during data rewriting, which was previously limited to close proximity, and is expected to create new applications that combine electronic paper with UHF band RFID. ■Features This battery-less electronic paper tag technology is realized through our UHF band RFID LSI "MB97R8110" designed for battery-less solutions. The user memory area of the MB97R8110 utilizes FeRAM, which features non-volatility, high-speed writing, and low power consumption. Conventional electronic paper tags only displayed data stored in built-in memory, but by using FeRAM, it is now possible to transfer image data at will and rewrite it in a short time.

Our company has developed the 8M-bit FeRAM "MB85R8M2T," which has the largest memory capacity in our FeRAM product lineup. This product operates within a wide range of 1.8V to 3.6V and features a non-volatile memory with an SRAM-compatible parallel interface. It addresses the demand for increased memory capacity beyond the previous maximum of 4M bits FeRAM and the reduction of battery usage for power interruption measures in existing 8M-bit SRAM applications. By replacing the SRAM used in industrial machinery applications such as control devices, robots, and machine tools with this FeRAM, it eliminates the need for batteries and reduces the mounting area of the memory section by approximately 90%, contributing to a reduction in total costs. ■ Main Specifications - Product Name: MB85R8M2T - Capacity (Memory Configuration): 8M bits (512K x 16 bits) - Interface: Parallel Interface - Operating Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles - Package: 48-pin FBGA (8 mm × 6 mm)

Our company has developed the "MB85RS64VY," a 64K-bit FeRAM with an SPI interface, as the first product in the FeRAM product family guaranteed to operate at 125°C with a power supply voltage of 5V. ■ Main Specifications - Product Name: MB85RS64VY - Capacity (Memory Configuration): 64K bits (8K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 33MHz - Operating Supply Voltage: 2.7V to 5.5V - Operating Temperature Range: -40°C to +125°C - Write/Read Endurance: 10 trillion cycles (10^13 cycles) - Package: 8-pin SOP, 8-pin SON ■ Application Examples It is ideal for automotive electronic components and industrial machinery that use 5V operating electronic parts, such as temperature sensors.

Our company has developed the 64K-bit FeRAM "MB85RS64TU" as a memory that guarantees operation in extremely low temperature environments of -55°C, and we are providing mass-produced products. This product features a wide operating voltage range of 1.8V to 3.6V and is a non-volatile memory capable of operating at lower temperatures than competing memories. It guarantees 10 trillion data rewrite cycles even at -55°C, making it particularly suitable for industrial machinery used in field devices for natural gas and oil extraction in extremely cold regions. ■ Main Specifications - Product Name: MB85RS64TU - Capacity (Memory Configuration): 64K bits (8K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 10MHz - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -55°C to +85°C - Write/Read Guarantee Cycles: 10 trillion cycles - Package: 8-pin SOP, 8-pin SON ■ Application Examples This FeRAM can be used not only in low-temperature environments but also in various industrial fields such as general measuring instruments, flow meters, and robots.

Our company offers automotive-grade FeRAM with an I2C interface that guarantees low operating current and 10 trillion data rewrite cycles in high-temperature environments of 125°C. We have newly added the maximum capacity 512K-bit FeRAM 'MB85RC512LY' to our lineup. In addition to automotive applications such as ADAS (Advanced Driver Assistance Systems), it is also suitable for industrial robots and more. 【Features】 ■ Operates at a low supply voltage of 1.7V to 1.95V ■ Maximum operating current is 0.4mA when operating at up to 3.4MHz ■ Guarantees 10 trillion data rewrite cycles over a temperature range of -40°C to +125°C ■ Well-suited for applications requiring real-time data recording *For more details, please refer to the materials. Feel free to contact us with any inquiries.

Our battery-less solution utilizes the power supply mechanism of RFID equipped with our non-volatile memory FeRAM products, enabling devices added to the tag side to operate without a battery. We provide solutions tailored to our customers' applications. ■ Benefits of the Battery-less Solution <Advantages for Users> - No need for battery replacement (no purchase or storage required) - Improved mobility and greater flexibility in placement due to the absence of cables <Advantages for Equipment Development Manufacturers> - Increased design freedom (thinner and smaller) by reducing the need for battery boxes - Easier waterproofing and dustproofing processes

We have developed the 2M-bit FeRAM "MB85RS2MTY," which has the largest memory capacity in the FeRAM family guaranteed to operate at 125°C, and we have begun providing evaluation samples. This product is a non-volatile memory that guarantees 10 trillion data write cycles even in high-temperature environments of 125°C. It allows for continuous recording of real-time driving data or location data, and data is not lost even during power outages. ■ Main Specifications - Product Name: MB85RS2MTY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40°C to +125°C - Write/Read Guarantee Cycles: 10 trillion (10^13 cycles) - Package: 8-pin SOP, 8-pin DFN - Quality Standards: AEC-Q100 Grade 1 compliant ■ Example Applications - Automobiles that become high-temperature due to heat generated by engines or motors - Industrial robots

The MB85RS2MLY guarantees 10 trillion data rewrites in a temperature range of -40°C to +125°C. This characteristic is suitable for applications that require real-time data recording. For example, it is possible to record data every 0.1 seconds for 10 years (over 3 billion times). Additionally, the reliability testing of this product complies with AEC-Q100 Grade 1, a high-quality standard known as automotive grade. Therefore, from both the perspective of data write cycles and reliability, this product is well-suited for applications that continuously detect and record the state of vehicles, such as ADAS. ■ Main Specifications - Product Name: MB85RS2MLY - Capacity (Memory Configuration): 2M bits (256K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Supply Voltage: 1.7V to 1.95V - Operating Temperature Range: -40°C to +125°C - Write/Read Guarantee Cycles: 10 trillion (10^13 times) - Package: 8-pin SOP, 8-pin DFN - Quality Standard: AEC-Q100 Grade 1 compliant

"FeRAM" is a non-volatile memory that uses ferroelectric elements. It offers advantages such as high rewrite endurance, fast writing speed, and low power consumption. In particular, the "MB85RS4MTY" is a 4M-bit FeRAM developed to meet the growing demand for larger capacities, building on the 2M-bit FeRAM "MB85RS2MTY." Even in high-temperature environments of 125°C, it can handle up to 10 trillion data write cycles, making it suitable for automotive applications such as advanced driver-assistance systems (ADAS) and industrial robots. 【Features】 ■ Operates with a wide power supply voltage range of 1.8 to 3.6V ■ Adopts SPI interface ■ Even in high-temperature environments, the operating current is a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30μA, ensuring low power consumption. *We are currently offering materials that introduce detailed features and application examples of "FeRAM." You can view them via "PDF download." Please feel free to contact us for inquiries.

The MB85RS1MT is a compact size of 3.09 x 2.28 x 0.33mm. When comparing the implementation area of both, the WL-CSP corresponds to about 23% of the SOP, allowing for a reduction of approximately 77% in implementation area. Furthermore, this compact package achieves a thickness of 0.33mm, which is about half that of a credit card, enabling a volume reduction of about 95% compared to SOP in terms of implementation volume. By introducing this FeRAM into wearable devices that frequently record real-time log data, it is possible to extend or miniaturize battery life. ■ Main Specifications - Product Name: MB85RS1MT - Memory Capacity (Configuration): 1M bits (128K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Supply Voltage: 1.8V to 3.6V - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (+85°C) - Package: 8-pin WL-CSP, 8-pin SOP

This product is a non-volatile memory that retains data even when the power is turned off. It is offered in a 44-pin TSOP package compatible with general-purpose SRAM, allowing for the replacement of SRAM with this FeRAM in industrial machinery, business equipment, and medical devices without significantly altering the design of the circuit board. This eliminates the need for a battery for data retention, contributing to a reduction in the mounting area of the final product's circuit board, power savings, and overall cost reduction. ■ Main Specifications - Capacity (Configuration): 4M bits (256K × 16 bits) - Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles (10^13 cycles) - Data Retention Characteristics: 10 years (+85℃) - Access Time Address Access Time: 150ns (Min) /CE Access Time: 75ns (Max) - Operating Current Operating Supply Current: 20mA (Max) Standby Current: 150µA (Max) Sleep Current: 20µA (Max) - Package: 44-pin TSOP

This product operates on a single power supply of 1.8V and features a quad SPI interface with four input/output pins, achieving a data transfer speed of 54MB per second. This high-speed operation and the characteristics of non-volatile memory make it ideal for use in networking, RAID controllers, and industrial computing fields. ■ Main Specifications - Product Name: MB85RQ4ML - Memory Capacity (Configuration): 4M bits (512K x 8 bits) - Interface: SPI / Quad SPI - Operating Power Supply Voltage: 1.7V to 1.95V (single supply) - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (+85°C) - Package: 16-pin SOP

This product is a memory developed in response to the demands from customers using existing EEPROMs due to changes in the environment, such as the expansion of edge computing and the increase in the amount of sensor data. Customers have expressed the desire to "increase the number of rewrite cycles," "reduce rewrite time," and "increase memory capacity." This product is well-suited for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices. ■ Main Specifications - Product Name: MB85RS4MT - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 40MHz - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Guarantee Cycles: 10 trillion cycles - Package: 8-pin SOP

The "MB85RC1MT," our largest memory capacity FeRAM with an I2C interface, has a capacity of 1 megabit and guarantees 10 trillion write cycles, making it an ideal product for FA control devices, measurement meters, and industrial machinery that require frequent rewrites such as real-time logging. We offer a wide range of FeRAM products with both I2C and SPI serial interfaces, allowing us to provide the optimal non-volatile memory products to meet our customers' needs. ■ Features This product is the 1 megabit (128K words x 8 bits) FeRAM "MB85RC1MT" with an I2C interface. It operates at a low voltage of 1.8V to 3.3V within a temperature range of -40°C to +85°C. In addition to a standard operating frequency of 1MHz, comparable to EEPROM, it supports a high-speed mode for reading and writing at 3.4MHz. The guaranteed rewrite cycle count far exceeds that of general-purpose EEPROM, reaching 10 trillion cycles, thus strongly supporting frequent data rewrites such as real-time logging in I2C products.

We would like to introduce a case study on ferroelectric RAM (FeRAM) for business discussions. In automotive applications such as car navigation systems and dash cameras, there is a demand for "continuous real-time data recording" in memory. The required features are high rewrite endurance, non-volatility, and fast writing. Our product is a memory that possesses these necessary features. "While I want to frequently acquire data, I can't due to memory rewrite limitations." "It is difficult to implement measures for protecting data being written during power interruptions or outages." If you have such challenges, please consider FeRAM. 【Business Case Study (Excerpt)】 <For Automotive Applications> ■ Requirements for Memory - Continuous real-time data recording / Data protection during accidents ■ Required Features - High rewrite endurance / Non-volatility / Fast writing *For more details, please refer to the PDF document or feel free to contact us.

Ferroelectric memory "FeRAM" is a type of semiconductor memory, also known as ferroelectric memory, and is a non-volatile memory that retains data even when the power is turned off. This document introduces the basics of "FeRAM," including an overview, applications, features, and more! It is a useful resource. Please take a moment to read it. [Contents] ■ Overview of ferroelectric memory "FeRAM" ■ Applications where ferroelectric memory "FeRAM" is used ■ Achievements of ferroelectric memory "FeRAM" ■ Features of ferroelectric memory "FeRAM" ■ Challenges and solutions *For more details, please refer to the PDF document or feel free to contact us.

The "MB85R8M2TA" is a parallel interface FeRAM that operates with a wide range power supply voltage of 1.8V to 3.6V. It achieves approximately 30% faster access speed compared to our conventional products while reducing operating current by 10%, balancing high-speed operation with low power consumption. It is well-suited for industrial machinery that requires high-speed operation, where SRAM has been used until now. 【Features】 ■ High rewrite endurance (high number of guaranteed rewrite cycles) ■ High-speed writing ■ Low power consumption ■ Over 20 years of mass production experience *For more details, please refer to the PDF document or feel free to contact us.

The "MB85RQ8MLX" is a non-volatile memory that achieves a bandwidth of 54MB/s, equivalent to an SRAM with an access time of 45ns, by incorporating a high-speed serial interface known as Quad SPI. It can replace parallel interface SRAM without compromising memory performance. Additionally, it allows for a significant reduction in pin count compared to traditional parallel interfaces, simplifying the wiring layout on the circuit board and contributing to BOM cost reduction. We are also developing an 8M-bit Quad SPI FeRAM (MB85RQ8MX) that operates at 3.3V (2.7V to 3.6V). 【Features】 ■ Bit configuration: 1,048,576 words × 8 bits ■ Operating frequency: 108MHz (single read using FSTRD command) ■ Write/read endurance: 10^13 times/byte ■ Data retention characteristics: 10 years (+105℃) ■ Operating current: 18mA @ Quad I/O 108MHz *For more details, please refer to the PDF document or feel free to contact us.

Our company has responded to the demands of customers in the automotive and industrial sectors who want memory that guarantees operation in high-temperature environments by developing and providing automotive-grade FeRAM products since 2016. These products not only extend the operating temperature of conventional products to 125°C but also improve reliability by re-evaluating the design of the internal circuits. Furthermore, they comply with the AEC-Q100 reliability testing standards and are compatible with PPAP. Additionally, applications such as industrial machinery that incorporate motor mechanisms require electronic components that can guarantee operation in high-temperature environments due to heat generated by motors. Our company provides FeRAM that can operate at 125°C with high reliability and performance to meet the needs of these markets. **Features of 125°C Operating FeRAM:** - Clears high-reliability evaluations to meet the high-quality standard known as automotive grade AEC-Q100 Grade 1 - SPI interface - Memory capacity: from 64K bits to 4M bits *For more details on the product lineup, please visit the website below. Feel free to contact us with any inquiries.*

FeRAM (Ferroelectric RAM) is a non-volatile memory characterized by high-speed writing, high rewrite cycles, and low power consumption. This product is further optimized for rotary encoder applications as it incorporates data processing (Binary Counter function) within the chip. Additionally, the operating temperature has been extended to -40℃ to 125℃. 【Features】 ■ High-speed writing and high rewrite cycles ■ Industry-leading low power consumption for extended battery life ■ Built-in binary counter function ■ Operating temperature: -40℃ to 125℃ ■ Ideal for compact product designs *For more details, please check the materials from the [PDF Download]. Feel free to contact us with any inquiries.

A global company that broadly handles factory automation equipment such as PLCs, motion controllers, servo motors, and HMIs. Customers are adopting FeRAM in a wide range of products, starting with PLCs. It was clear that traditional non-volatile memories like EEPROM and FLASH memory had slow write speeds, making it difficult to meet the specifications required by end users. By narrowing down to high-speed non-volatile memory, FeRAM emerged as a candidate due to its strong track record in the market, and its adoption was decided. Customers have increased the number of end users with products that utilize FeRAM, solidifying their reputation and achievements in the market. [Case Overview] In PLCs, FeRAM enables high reliability, ease of maintenance, and a long system lifespan due to its fast write speeds, high rewrite endurance, and excellent data retention. *For more details, please download the PDF or feel free to contact us.*

The customer, a globally advanced company in environmental conservation that develops renewable energy equipment such as PV inverters, energy storage, and wind power generation facilities, has adopted FeRAM for their PV inverters. The customer was required to log current and voltage data every second to ensure reliable fault analysis from end users. Traditional non-volatile memory such as EEPROM and FLASH memory faced challenges in maintaining operation over the long operational periods of the customer's products. Therefore, by adopting FeRAM, which offers fast writing speeds and high rewrite endurance, the customer has successfully developed products that reliably store log data throughout the long operational lifespan, satisfying the demands of end users. [Case Overview] ■ In PV inverters, FeRAM enables high reliability, ease of maintenance, and a long system lifespan due to its fast writing speeds, high rewrite endurance, and excellent data retention. *For more details, please download the PDF or feel free to contact us.

The EV charger receives power from the power grid and includes an AC charger that supplies AC power to the EV's battery and a DC fast charger that supplies DC power converted from AC to the battery, and FeRAM can be used for both. FeRAM accurately records the power charged to the EV even during power outages or momentary interruptions, enabling appropriate billing for users. Furthermore, logging irregular events such as voltage fluctuations and frequency variations contributes to identifying the causes of issues. [Recommended Products] ■MB85RS2MTA ■MB85RS256B ■MB85RS64 *For more details, please download the PDF or feel free to contact us.

Here are some examples of utilizing FeRAM in uninterruptible power supplies (UPS). UPS ensures continuous power supply by converting DC voltage from the battery into AC voltage of the required amplitude and frequency in the event of a power outage. FeRAM enables seamless power supply transition from the power grid to battery power by continuously recording the AC voltage waveform, allowing for a smooth switch during a power outage. [Recommended Products] ■MB85RQ8MX ■MS85R4M2TA ■MB85RS512T ■MB85RS256B *For more details, please download the PDF or feel free to contact us.

In cases where FeRAM is adopted, there have been instances where the consideration for incorporating FeRAM was initiated due to troubles caused by the insufficient performance of the originally used EEPROM. In terms of rewrite endurance, both FeRAM and SRAM met the requirements; however, FeRAM has the advantage of not requiring battery backup even when the system voltage is lost due to a failure, which led to the decision to adopt FeRAM. The adoption of FeRAM has improved the reliability of the product in terms of accuracy and lifespan, and it has also contributed to the reduction of peripheral circuits needed for using batteries and capacitors, thereby helping to lower development costs for customers with a simpler circuit configuration. [Case Overview] ■ Rapid recovery even in unexpected failures ■ High rewrite endurance capable of recording log data in milliseconds *For more details, please download the PDF or feel free to contact us.

The FeRAM (MB85RDP16LX) for rotary encoders is equipped with an internal counter and FeRAM, allowing it to count the rotation speed of a motor. This means that even with the weak power generated by coil electromotive force, the calculations and writing of data stored in FeRAM can be completed, enabling continuous counting of the motor's rotation speed even in a power-off state. Unlike FLASH memory, FeRAM does not require a boost power supply and does not need a complex internal power sequence. Therefore, there is no waiting time until the power stabilizes, and memory can be accessed immediately after power-up. Additionally, unlike EEPROM, there is no waiting time for write operations, and it has a high rewrite endurance, allowing for data processing in memory (within FeRAM). **Five Reasons to Choose FeRAM for Rotary Encoders** - Fast startup - High-speed writing and high rewrite endurance - Low power consumption - Magnetic field resistance - No battery required *For more details, please download the PDF or feel free to contact us.*