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  6. Atmospheric Pressure CVD (APCVD) System for Small-scale Production and Development (D501)

Atmospheric Pressure CVD (APCVD) System for Small-scale Production and Development (D501)

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D Series "D501"

last updated:Aug 08, 2025

M.WATANABE & CO.,LTD.
M.WATANABE & CO.,LTD.
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For prototyping, development, and small lot production For deposition of NSG(SiO2)/BSG/PSG/BPSG Batch processing (simultaneous processing of multiple substrates) APCVD system

The D501 is a batch processing (multiple-unit simultaneous processing) atmospheric pressure CVD system (APCVD system) for small-volume production/testing and silicon oxide deposition (SiO2 deposition) on irregularly shaped substrates. 【Features】  ・Simultaneous processing of substrates of different shapes and sizes  ・High deposition speed  ・Simple maintenance  ・Small footprint  ・Low CoO (low running cost) 【Applications】  ・Interlayer insulating (NSG/PSG/BPSG)  ・Hard mask for diffusion/ion implantation, Sacrificial deposition (NSG)  ・Passivation deposition (protective deposition, insulating deposition) (NSG)  ・Source films for solid phase diffusion for solar cells (BSG, PSG)/Cap deposition (NSG) *For more details, please contact us or download the catalog for further information.

    CVD Equipment
D501_ipros.png

Atmospheric Pressure CVD (APCVD) System for Small-scale Production and Development (D501)

D501_ipros.png
D501_ipros.png
  • Atmospheric Pressure CVD (APCVD) System
  • Special site - Product/service details - https://pr.mono.ipros.com/m-watanabe/product/

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Multiple wafers are manually loaded into a large tray, and the tray is moved back and forth under the dispersion head (gas nozzle) to perform deposition. The features of atmospheric pressure CVD (APCVD) are retained, and films can be easily deposited. Delivery record  Domestic and foreign semiconductor device and opto-device manufacturers  Universities and research institutes Equipment size (mm): 1200(W) x 2480(D) x 1940(H) Gas type: SiH4/O2 (SiH4/PH3/B2H6/O2/N2)      TEOS/O3 (TEOS/TMOP/TEB/O3/O2/N2) (option)      SiH4/O3 (SiH4/PH3/B2H6/O3/O2/N2)(option) Deposition temperature: 350-430 degrees (150-300 degrees for SiH4/O3) *For more details, please contact us or download the catalog to view.

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Applications/Examples of results

【Applications】  ・Interlayer insulating deposition (NSG/PSG/BPSG)  ・Hard mask for diffusion/ion implanter, Sacrificial deposition (NSG)  ・Passivation deposition (protective deposition, insulating deposition) (NSG)  ・Source deposition for solid phase diffusion for solar cells (BSG, PSG)/Cap deposition (NSG) 【Delivery Record】  ・Domestic and overseas semiconductor device and opto-device manufacturers  ・Universities and research institutes

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Catalog for Small-Scale Production and Development Atmospheric Pressure CVD (APCVD) Equipment (D501)

Catalog for Small-Scale Production and Development Atmospheric Pressure CVD (APCVD) Equipment (D501)

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M.WATANABE

M.WATANABE & CO.,LTD.

Electronic Components and Semiconductors

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Founded in 1930 as a specialized trading company for imports and exports, we celebrated our 90th anniversary in 2020 and are fully committed to the further development of the M.WATANABE Group. Since the mid-1960s, we have started manufacturing and selling our own products such as quartz processed products, silicone rubber molded products, and cleaning equipment, under the policy of selling silicon (Si) related products to the semiconductor industry. As a manufacturing trading company, we have grown alongside the IT society by providing high-quality products and services. Moving forward, we aim to create a company where employees of the group companies, centered around M.WATANABE & CO.,LTD., work vibrantly every day, and the entire workplace becomes a learning organization. We are determined to continue striving in all our business endeavors with a strong will to respond to the true needs of society. We sincerely ask for your continued support and patronage.

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