GaN power devices, which are attracting attention as key technologies for an energy-saving society. A detailed explanation of the related technologies from crystal growth to packaging for their development!
○Publication Date: April 25, 2012 ○Format: B5 size, hardcover, 264 pages ○Price: 60,000 yen (excluding tax) → STbook member price: 56,952 yen (excluding tax) ○Authors: Takashi Egawa, Nagoya Institute of Technology / Akihiro Kakehashi, Tokyo University of Agriculture and Technology / Yoshinao Kumagai, Tokyo University of Agriculture and Technology / Nao Murakami, Tokyo University of Agriculture and Technology / Nobuo Fukuda, Tohoku University / Fukuda Crystal Technology Research Institute, Inc. / Kazuo Yoshida, Asahi Kasei Corporation / Yusuke Mori, Osaka University / Kan Imade, Osaka University / Mihoko Maruyama, Osaka University / Masashi Yoshimura, Osaka University / Mokichi Iwatani, Meijo University / Koji Kawai, PODEC Corporation / Jun Komiyama, Covalent Materials Corporation / Junichi Yanagisawa, Shiga University / Yasushi Hashizume, Hokkaido University / Yoshitaka Nakano, Chubu University / Toshirou Doi, Kyushu University / Hideo Aida, Namiki Precision Jewel Co., Ltd. / Hirotaka Zou, ULVAC, Inc. / Ryuichiro Uemura, ULVAC, Inc. / Junji Watanabe, Kumamoto University / Takayuki Goto, Mitsubishi Heavy Industries, Ltd. / Kensuke Ide, Mitsubishi Heavy Industries, Ltd. / and 7 others.
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Chapter 1: Overview, Characteristics, and Development Trends of GaN Power Devices Chapter 2: GaN Crystal Growth Technology (Bulk) 1. Section: GaN Crystal Growth by HVPE Method 2. Section: GaN Bulk Crystal Growth by Ammonothermal Method 3. Section: GaN Crystal Growth by Na Flux Method Chapter 3: GaN Crystal Growth Technology (Epitaxial) 1. Section: Growth Mechanism of c-plane GaN on MOVPE-Sapphire Substrate 2. Section: Wide Stripe ELO-GaN Growth and Device Applications 3. Section: Development of Large-Diameter GaN on Si Substrates by MOVPE 4. Section: Local Formation of Gallium Nitride Without Sapphire Substrates Using MOCVD Chapter 4: Physical Property Evaluation of GaN Crystals 1. Section: Interface Level Evaluation of GaN Semiconductors 2. Section: Defect Level Evaluation of AlGaN/GaN Heterostructures Chapter 5: GaN Crystal Processing 1. Section: Ultra-Precision Processing Technology for GaN Crystal Substrates 2. Section: Development of Etching Equipment for GaN and Sapphire Substrates 3. Section: Ultraflatting of Material Surfaces by UV Light Excitation 4. Section: Room Temperature Wafer Bonding Equipment (Taking GaN as a Case Study) Chapter 6: Applications of GaN Power Devices
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Main unit 60,000 yen + tax → STbook member price: 56,952 yen + tax
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S&T Publishing publishes technical books aimed at researchers and engineers.
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