The leading candidate for next-generation power electronics!
○Publication Date: May 14, 2010 ○Format: B5 size, hardcover, 309 pages ○Price: 60,000 yen (excluding tax) → STbook member price: 56,952 yen (excluding tax) ○Authors: Tsuneaki Kimoto, Kyoto University Noboru Otani, Kwansei Gakuin University Tatsuo Fujimoto, Nippon Steel Corporation Kazuhiro Kusunoki, Sumitomo Metal Industries, Ltd. Kazuto Kamei, Sumitomo Metal Industries, Ltd. Masayuki Yashiro, Sumitomo Metal Industries, Ltd. Nobuhiro Okada, Sumitomo Metal Industries, Ltd. Toru Ujihara, Nagoya University Osamu Eryu, Nagoya Institute of Technology Graduate School Masafumi Kato, Nagoya Institute of Technology Graduate School Akira Murakami, Sumitomo Precision Products Co., Ltd. Akimasu Tasaka, Doshisha University Yuki Ishida, National Institute of Advanced Industrial Science and Technology Yasunobu Tanaka, National Institute of Advanced Industrial Science and Technology Shuichi Tsuchida, Central Research Institute of Electric Power Industry Hidekazu Yokoo, ULVAC, Inc. Toshitoshi Matsumoto, Osaka University Institute of Industrial Science Hikaru Kobayashi, Osaka University Institute of Industrial Science Toshifumi Ise, Osaka University Jianhua Ding, Tohoku University Yuji Sudo, Tohoku University And 14 others.
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Chapter 1. Trends, Challenges, and Future Developments in SiC Power Device Technology Chapter 2. SiC Single Crystal Growth Technology (Sublimation Method) - Enhancing Quality and Increasing Diameter Chapter 3. Development Trends of SiC Single Crystal Wafers Chapter 4. Solution Growth Technology for SiC Bulk Crystals Chapter 5. Ultra-Flat Processing/Polishing Slurry Technology for SiC Semiconductor Substrates Chapter 6. Anisotropic Etching Technology for SiC Chapter 7. Surface Smoothing of SiC by Plasma Etching Chapter 8. Latest Trends in SiC Epitaxial Growth Technology Chapter 9. Behavior of Extended Defects in 4H-SiC Epitaxial Growth Chapter 10. Semiconductor Manufacturing Technology and Equipment for SiC Chapter 11. Methods for Forming Oxide Films for SiC Power Devices Chapter 12. Methods for Forming Metal Electrodes on SiC Chapter 13. Interface Reaction Structure and Reliability of Metal Electrodes/SiC for Power Devices Chapter 14. CVD Technology for Mass Production of SiC Power Devices Chapter 15. Ultra-High Temperature Thermal Processing Equipment for SiC Power Devices Chapter 16. SIT for SiC Power Devices ~Chapter 21
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Main body 60,000 yen + tax → STbook member price: 56,952 yen + tax
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S&T Publishing publishes technical books aimed at researchers and engineers.
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