Revisiting the question! Key technological points necessary for the widespread adoption of next-generation power devices.
This book, "Key Points for the Popularization of SiC/GaN Power Electronics," is edited around the question of what points are essential for widely disseminating SiC/GaN power devices, which will become the main players in power electronics in the near future. It provides detailed information not only on device and process technologies and implementation and application circuit technologies but also on challenges and countermeasures in automotive and solar power applications, passive components, as well as standards and international standardization. Furthermore, it offers a thorough explanation of future market trends for power devices, covering a wide range of topics. I hope this book will be greatly beneficial in accelerating the penetration of SiC/GaN power devices towards the full realization of an environmentally friendly and highly efficient power utilization society. (Noriyuki Iwamuro, "Introduction")
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basic information
Chapter 1: Challenges and Prospects of Devices and Materials in the Spread of SiC Power Electronics Chapter 2: Challenges and Prospects of Devices and Materials in the Spread of GaN Power Electronics Chapter 3: Latest Technologies of Si Power Devices and Challenges in the Spread of SiC Power Devices Chapter 4: Comparison of the Practical Application and Prospects for the Spread of GaN Power Devices and SiC Power Devices Chapter 5: Characteristics and Countermeasures of Electromagnetic Noise Generation in SiC/GaN Power Electronics Chapter 6: Junction Technology of SiC/GaN Power Devices Chapter 7: Challenges and Countermeasures for SiC/GaN Power Device Packaging Materials Chapter 8: Current Status of Cooling Technologies for Si Power Devices and Cooling Technologies for SiC/GaN Power Devices Chapter 9: Challenges and Direction of Countermeasures for Materials and Components for SiC/GaN Power Electronics Chapter 10: Challenges and Countermeasures for Transformers and Reactors in SiC/GaN Power Electronics Chapter 11: Challenges and Countermeasures for the Application of SiC Power Devices in Automobiles Chapter 12: Challenges and Prospects in Standardization and International Standardization of SiC/GaN Power Devices Chapter 13: Market for Power Semiconductors and Prospects for the Spread of SiC and GaN Devices
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50,000 Separate consumption tax
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P2
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P2
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[Supervision] Nobuyuki Iwamuro / Tsukuba University [Authors] Nobuyuki Iwamuro / Tsukuba University Jun Suda / Nagoya University Kazuki Sato / Mitsubishi Electric Corporation Tadakatsu Minato / Mitsubishi Electric Corporation Masayuki Imaizumi / Mitsubishi Electric Corporation Tetsuzo Tanaka / Panasonic Corporation Keiji Wada / Tokyo Metropolitan University Katsuaki Suganuma / Osaka University Akio Takahashi / Yokohama National University Ichiro Ota / Showa Denko K.K. Shinobu Yamauchi / Showa Denko K.K. Yuichi Furukawa / Showa Denko K.K. Hiroshi Yamaguchi / National Institute of Advanced Industrial Science and Technology Shinichiro Nagai / Pony Electric Co., Ltd. Kazuhiro Tsuruta / Denso Corporation Takashi Shino / FLOSFIA Inc.
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S&T Publishing publishes technical books aimed at researchers and engineers.
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