The technology of SiC power devices is accelerating in popularity. This explains transistors, diodes, modules, crystal growth and processing, and application development.
○Publication Date: October 30, 2012 ○Format: B5 size hardcover, 361 pages ○Price: 60,000 yen (excluding tax) → STbook member price: 56,952 yen (excluding tax) ○Supervision: Noriyuki Iwamuro ○Authors: Noriyuki Iwamuro, Fuji Electric Co., Ltd. (on secondment from National Institute of Advanced Industrial Science and Technology) / Yuki Nakano, Rohm Co., Ltd. / Nobusuke Harada, National Institute of Advanced Industrial Science and Technology / Akihiko Furukawa, Mitsubishi Electric Corporation / Masayuki Imaizumi, Mitsubishi Electric Corporation / Tatsuhiro Omori, Mitsubishi Electric Corporation / Yuji Yano, Nara Institute of Science and Technology / Masanobu Yoshikawa, Toray Research Center, Inc. / Junju Seki, National Institute of Advanced Industrial Science and Technology / Naotaka Nihongi, Infineon Technologies Japan Co., Ltd. / Takashi Tsukino, Sumitomo Electric Industries, Ltd. / Katsunori Asano, Kansai Electric Power Co., Inc. / Takashi Tsuji, Fuji Electric Co., Ltd. (on secondment from National Institute of Advanced Industrial Science and Technology) / Koji Nakayama, Kansai Electric Power Co., Inc. / Masayuki Hikita, Kyushu Institute of Technology / Junji Watanabe, Kyushu Institute of Technology / Masafumi Kato, Nagoya Institute of Technology / Kazuto Takao, Toshiba Corporation / Hitoki Tokuda, Sumitomo Electric Industries, Ltd. / Yoshihiro Ishikawa, ADEKA Corporation / and 17 others.
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Chapter 1: Latest Technologies and Future Developments of SiC Power Devices 1. Latest Trends in Silicon Power Devices 2. Current Status and Future Trends in SiC Power Device Development 3. Supporting Technologies for SiC Power Devices Chapter 2: Element Technologies and Latest Trends of SiC Transistors Section 1: Ultra-Low Loss SiC Trench MOSFET Section 2: Normally Off SiC-MOSFET Section 3: SiC-MOSFET with Current Sensing Function Section 4: Technology for Reducing MOS Interface Defects and Improving Quality Section 5: Defect Analysis and Observation Techniques for SiC Power Devices Section 6: High Reliability of SiC Gate Insulation Films Section 7: SiC-JFET Section 8: RESURF Type JFET Section 9: SiC-GCT Chapter 3: Element Technologies and Latest Trends of SiC Diodes Chapter 4: Element Technologies and Latest Trends of SiC Power Modules Chapter 5: Characteristics of Mounting Materials Chapter 6: SiC Single Crystal Growth Technology Chapter 7: Cutting and Polishing Technology for SiC Crystals Chapter 8: Epitaxial Growth Technology for SiC Chapter 9: Application Developments of SiC Power Devices
Price information
Main unit 60,000 yen + tax → STbook member price: 56,952 yen + tax
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P2
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P2
Applications/Examples of results
SiC, chemistry
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S&T Publishing publishes technical books aimed at researchers and engineers.
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