Compatible with diameters from approximately 30 mm to 8 inches, high-resistance FZ wafers.
We can accommodate high resistance over 10,000 ohms, with diameters ranging from approximately 30 mm to 8 inches, and we also offer thinning and chip processing arrangements!
The diameter ranges from approximately 30 mm to 8 inches, featuring high lifetime, low oxygen, and low carbon, with the capability to accommodate ultra-high resistance wafers exceeding 10,000 Ω. FZ wafers for sensors are used in particle inspection machines and IR inspection machines, while FZ wafers for high-power devices are used in thyristors and IGBTs, and FZ wafers for medium voltage are utilized in IGBTs and diodes. *Prime Grade FZ ingots (available for immediate delivery) A Certificate of Conformance (CofC) with actual measurement values will be provided upon delivery. Processing into wafers is also possible. Specifications: Finish: as ground Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Ingot length (mm): 200 - 400 First OF (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second OF (mm): N.A. Type: N-type Lifetime (microsec): 1000 Resistance value (ohm cm) at 25°C: 2032 ± 700.00 RRV [%]: N.A. *Multiple pieces are in stock.
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basic information
【Features】 ○ Compatible with diameters of approximately 30mm to 8 inches ○ Capable of handling a wide range of resistances from around 10 ohms to over 10,000 ohms ○ High lifetime, low oxygen, low carbon ○ Compatible with infrared windows, filters, lenses, etc. ○ Used in applications such as solar cells due to resistance bands. [High Resistance FZ Wafer for Sensors] ○ Usable in particle inspection machines, IR inspection machines, etc. ○ Capable of achieving high resistances exceeding several thousand to 10,000 ohms. ○ Manufactured using the FZ method, characterized by high lifetime with few impurities. [FZ Wafer for High Power Devices] ○ Usable in thyristors, IGBTs (over 1200V), etc. ○ Low variation in resistance ○ Neutron irradiation is performed, resulting in very low resistance variation. [FZ Wafer for Medium Voltage] ○ Usable in IGBTs (over 600V), diodes, etc. ○ Manufactured using gas doping. [FZ Wafer for High Voltage] ○ Neutron-treated silicon wafers used in high voltage IGBTs. ○ Characterized by low resistance variation. ● For more details, please contact us.
Price information
We can accommodate various specifications, so please contact us.
Delivery Time
※Short delivery times are possible depending on the product.
Applications/Examples of results
Power devices, sensors, detectors, etc. ● For more details, please contact us.
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Company information
Enatech handles a wide range of silicon wafer-related products and responds quickly and accurately to customer requests. With over 40 years since its establishment, we have supported a part of the semiconductor industry, primarily in the Si field. Through cooperation with silicon manufacturers and processing companies both domestically and internationally, we provide a stable supply of silicon materials not only to Japan but also to overseas markets. We mainly sell evaluation test wafers and film deposition wafers to semiconductor and solar cell manufacturers (as well as contract processing such as regeneration), and in the field of dummy wafers, we have two warehouses for Si sorting processes in Japan, allowing us to introduce various types of wafers to meet customer needs. In addition to CZ silicon wafers, we also handle FZ silicon wafers, SOI wafers, diffusion wafers, SiGe, GaAs, InP, sapphire, germanium, SiC wafers, used equipment for semiconductors, ferrite cores, iron oxide, high-purity chemicals, and more.